• Load Switches, Battery Switches and Charger Switches
in Portable Device Applications
• DC/DC Converters
MICRO FOOT
Bump Side
View
Backside
View
S
8
465
S
2
G
1
XXX
G
S
3
D
4
Device Marking:
8465
xxx = Date/Lot Traceability Code
Ordering Information:
Si8465DB-T2-E1 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
A
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
A
= 25 °C
Maximum Power Dissipation
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Package Reflow Conditions
c
VPR
IR/Convection
T
J
, T
stg
P
D
I
DM
I
S
I
D
Symbol
V
DS
V
GS
Limit
- 20
± 12
- 3.8
a
- 3
a
- 2.5
b
- 2.0
b
- 15
- 1.5
a
- 0.65
b
1.8
a
1.1
a
0.78
b
0.5
b
- 55 to 150
260
260
°C
W
A
Unit
V
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s.
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on T
A
= 25 °C.
Document Number: 65363
S09-1922-Rev. A, 28-Sep-09
www.vishay.com
1
Si8465DB
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum
Junction-to-Ambient
a, b
c, d
Symbol
t = 10 s
t = 10 s
R
thJA
Typical
55
125
Maximum
70
160
Unit
°C/W
Maximum Junction-to-Ambient
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper.
b. Maximum under steady state conditions is 100 °C/W.
c. Surface mounted on 1" x 1" FR4 board with minimum copper.
d. Maximum under steady state conditions is 190 °C/W.
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
≤
- 5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 1.5 A
V
GS
= - 2.5 V, I
D
= - 1.5 A
V
DS
= - 10 V, I
D
= - 1.5 A
Min.
- 20
Typ.
Max.
Unit
V
- 12
2.8
- 0.6
- 1.5
± 100
-1
- 10
- 10
0.086
0.122
7
450
0.104
0.148
mV/°C
V
nA
µA
A
Ω
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= - 10 V, V
GS
= - 10 V, I
D
= - 1 A
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= 1 A
V
GS
= - 0.1 V, f = 1 MHz
V
DD
= - 10 V, R
L
= 10
Ω
I
D
≅
- 1 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
125
95
12
6
0.85
2.2
7.5
20
20
25
10
7
30
30
40
15
15
15
40
15
18
9
pF
nC
Ω
ns
V
DD
= - 10 V, R
L
= 10
Ω
I
D
≅
- 1 A, V
GEN
= - 10 V, R
g
= 1
Ω
10
25
10
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
A
= 25 °C
- 1.5
- 15
A
V
ns
nC
ns
I
S
= - 1 A, V
GS
= 0 V
- 0.8
20
10
10
10
- 1.2
40
20
I
F
= - 1 A, dI/dt = 100 A/µs, T
J
= 25 °C
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 65363
S09-1922-Rev. A, 28-Sep-09
Si8465DB
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
15
5
12
I
D
- Drain Current (A)
V
GS
= 5
V
thru 3
V
9
V
GS
= 2.5
V
6
I
D
- Drain Current (A)
4
T
C
= 125 °C
3
2
T
C
= 25 °C
1
T
C
= - 55 °C
0
0.0
3
V
GS
= 2
V
V
GS
= 1.5
V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.25
800
C
iss
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
0.20
V
GS
= 2.5
V
0.15
600
Transfer Characteristics
400
C
oss
0.10
V
GS
= 4.5
V
0.05
0
3
6
9
12
15
200
C
rss
0
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 1 A
V
GS
- Gate-to-Source
Voltage
(V)
8
R
DS(on)
- On-Resistance
(Normalized)
V
DS
= 10
V
6
V
DS
= 5
V
4
V
DS
= 16
V
1.10
1.05
1.00
0.95
0.90
0
0
4
8
12
0.85
- 50
1.20
1.15
I
D
= 1.5 A
Capacitance
V
GS
= 4.5
V
V
GS
= 2.5
V
2
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 65363
S09-1922-Rev. A, 28-Sep-09
www.vishay.com
3
Si8465DB
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.25
I
D
= 1.5 A
0.20
10
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.15
T
J
= 125 °C
0.10
T
J
= 25 °C
0.05
T
J
= 150 °C
1
T
J
= 25 °C
0.1
0.0
0.00
0.3
0.6
0.9
1.2
1.5
0
1
2
3
4
5
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
1.3
1.2
1.1
Power (W)
V
GS(th)
(V)
1.0
0.9
0.8
5
0.7
0.6
- 50
15
I
D
= 250
µA
20
25
On-Resistance vs. Gate-to-Source Voltage
10
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
100
µs
1
1 ms
10 ms
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
BVDSS
Limited
100 ms,1s
10 s, DC
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 65363
S09-1922-Rev. A, 28-Sep-09
Si8465DB
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
4
1.5
3
Power Dissipation (W)
0
25
50
75
100
125
150
I
D
- Drain Current (A)
1.2
0.9
2
0.6
1
0.3
0
0.0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
T
A
- Ambient Temperature (°C)
Current Derating*
Note:
When Mounted on 1" x 1" FR4 with Full Copper.
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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