74HC594D
CMOS Digital Integrated Circuits
Silicon Monolithic
74HC594D
1. Functional Description
•
8-Bit Shift Register with Output Register
2. General
The 74HC594D is a high speed 8-BIT SHIFT REGISTER with Output Register fabricated with silicon gate
C
2
MOS technology.
It achieve the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power
dissipation.
The 74HC594D contains an 8-bit static shift register which feeds an 8-bit storage register.
Shift operation is accomplished on the positive going transition of the SCK input. The output register is loaded
with the contents of the shift register on the positive going transition of the RCK input. Since RCK and SCK
signal are independent, parallel outputs can be held stable during the shift operation. And direct overriding clears
(SCLR and RCLR) are provided on both the shift and storage registers.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
3. Features
(1)
(2)
(3)
(4)
High speed: f
MAX
= 55 MHz (typ.) at V
CC
= 5 V
Low power dissipation: I
CC
= 4.0
µA
(max) at T
a
= 25
Balanced propagation delays: t
PLH
≈
t
PHL
Wide operating voltage range: V
CC(opr)
= 2.0 V to 6.0 V
4. Packaging
SOIC16
Start of commercial production
©2016 Toshiba Corporation
1
2016-04
2016-08-05
Rev.4.0
74HC594D
5. Pin Assignment
6. Marking
7. IEC Logic Symbol
©2016 Toshiba Corporation
2
2016-08-05
Rev.4.0
74HC594D
8. Truth Table
X:
Don't care
9. Timing Chart
©2016 Toshiba Corporation
3
2016-08-05
Rev.4.0
74HC594D
10. System Diagram
11. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Input diode current
Output diode current
Output current (QH')
Output current (QA to QH)
V
CC
/ground current
Power dissipation
Storage temperature
I
CC
P
D
T
stg
(Note 1)
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
Note
Rating
-0.5 to 7.0
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
±20
±20
±25
±35
±75
500
-65 to 150
mA
mW
Unit
V
V
V
mA
mA
mA
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: P
D
derates linearly with -8 mW/ above 85
©2016 Toshiba Corporation
4
2016-08-05
Rev.4.0
74HC594D
12. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall times
Symbol
V
CC
V
IN
V
OUT
T
opr
t
r
,t
f
Test Condition
Rating
2.0 to 6.0
0 to V
CC
0 to V
CC
-40 to 125
0 to 50
Unit
V
V
V
µs
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either V
CC
or GND.
©2016 Toshiba Corporation
5
2016-08-05
Rev.4.0
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