Operating Temperature Range (Commercial) ........0°C to +70°C
Operating Temperature Range (Extended).........-40°C to +85°C
Storage Temperature Range .............................-65°C to +150°C
Junction Temperature ..................................................... +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
PACKAGE THERMAL CHARACTERISTICS (Note 1)
TQFP
Junction-to-Ambient Thermal Reistance (
θ
JA
)..............44°C/W
Junction-to-Case Thermal Resistance (
θ
JC
).................10°C/W
WLP
Junction-to-Ambient Thermal Reistance (
θ
JA
)..............27°C/W
Junction-to-Case Thermal Resistance (
θ
JC
)...................1°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
DD
= +2.7V to +5.5V, V
PP
= +40V to V
NN
+ 250V, V
NN
= -40V to -160V, T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values
are at T
A
= +25°C.) (Note 2)
PARAMETER
POWER SUPPLIES
V
DD
Supply Voltage
V
DD
MAX14802ECM+, MAX14803AEWZ+
V
PP
Supply Voltage
V
PP
MAX14802CCM+, MAX14803CCM+
V
NN
Supply Voltage
V
DD
Supply Quiescent
Current
V
DD
Supply Dynamic
Current
V
PP
Supply Quiescent
Current
V
NN
I
DDQ
I
DD
I
PPQ
V
DD
= +5V, V
LE
= +5V, f
CLK
= 5MHz
All switches remain on or off, I
COM_
= 5mA
0
+40
-160
+100
-100
+2.7
+40
+100
+5.5
V
NN
+
200
V
V
NN
+
250
0
5
0.5
10
V
μA
mA
μA
V
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
2
Maxim Integrated
MAX14802/MAX14803/MAX14803A
Low-Charge Injection, 16-Channel,
High-Voltage Analog Switches
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= +2.7V to +5.5V, V
PP
= +40V to V
NN
+ 250V, V
NN
= -40V to -160V, T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values
are at T
A
= +25°C.) (Note 2)
PARAMETER
V
PP
Supply Dynamic
Current (All Channel
Switching Simultaneously)
V
NN
Supply Quiescent
Current
V
NN
Supply Dynamic
Current (All Channel
Switching Simultaneously)
ANALOG SWITCH
COM_, NO_ Analog Signal
Range
V
COM_
,
V
NO_
min of (V
NN
+ 200V)
or (V
PP
-
10V)
26
22
22
18
20
16
5
15
30
40
0
-30
3
500
50
2
+30
48
32
30
27
30
27
%
Ω
KΩ
μA
mV
A
mA
Ω
SYMBOL
I
PP
CONDITIONS
V
PP
= +40V, V
NN
= -160V, f
COM_
= 50kHz
V
PP
= +100V, V
NN
= -100V, f
COM_
= 50kHz
V
PP
= +160V, V
NN
= -40V, f
COM_
= 50kHz
I
NNQ
All switches remain on or off, I
COM_
= 5mA
V
PP
= +40V, V
NN
= -160V, f
COM_
= 50kHz
I
NN
V
PP
= +100V, V
NN
= -100V, f
COM_
= 50kHz
V
PP
= +160V, V
NN
= -40V, f
COM_
= 50kHz
2.3
0
3.4
MIN
TYP
MAX
4
6
8
10
5
4
3
mA
μA
mA
UNITS
(Note 3)
V
NN
V
V
PP
= +40V, V
NN
= -160V,
V
COM_
= 0V
Small-Signal Switch
On-Resistance
R
ONS
I
COM_
= 5mA
I
COM_
= 200mA
V
PP
= +100V, V
NN
= -100V, I
COM_
= 5mA
V
COM_
= 0V
I
COM_
= 200mA
V
PP
= +160V, V
NN
= -40V, I
COM_
= 5mA
V
COM_
= 0V
I
COM_
= 200mA
V
PP
= +100V, V
NN
= -100V, V
COM_
= 0V,
I
COM_
= 5mA
V
COM_
= V
PP
- 10V, I
COM_
= 1A
NO_ or COM_ to GND (MAX14803/MAX14803A),
switch off
V
COM_
, V
NO_
= +100V or unconnected
R
L
= 100kΩ
100ns pulse width, 0.1% duty cycle (Note 4)
300ns pulse width, 2% duty cycle (Note 4)
Small-Signal Switch
On-Resistance Matching
Large-Signal Switch
On-Resistance
Shunt Resistance
Switch-Off Leakage
Switch-Off DC Offset
Switch-Output Peak
Current
Switch-Output COM_
Isolation Diode Current
ΔR
ONS
R
ONL
R
INT
I
COM_(OFF),
I
NO_(OFF)
Maxim Integrated
3
MAX14802/MAX14803/MAX14803A
Low-Charge Injection, 16-Channel,
High-Voltage Analog Switches
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= +2.7V to +5.5V, V
PP
= +40V to V
NN
+ 250V, V
NN
= -40V to -160V, T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values
are at T
A
= +25°C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
V
NO_
= +100V, R
L
= 10kΩ,
V
NN
= -100V
V
NO_
= +100V, R
L
= 10kΩ,
V
NN
= -100V
Duty cycle = 50%
(Note 4)
f = 5MHz, R
L
= 1kΩ, C
L
= 15pF
f = 5MHz, R
L
= 50Ω
f = 5MHz, R
L
= 50Ω
4
20
-150
20
820
600
350
0.75
V
DD
-
0.75
I
SINK
= 1mA
I
SOURCE
= 0.75mA
(Note 4)
-1
V
DD
-
0.5
10
+1
0.4
V
V
V
V
pF
μA
pC
20
-50
-77
-80
11
36
18
56
+150
MIN
TYP
MAX
UNITS
SWITCH DYNAMIC CHARACTERISTICS
Turn-On Time
Turn-Off Time
Output Switching
Frequency
Maximum V
COM_
, V
NO_
Slew Rate
Off-Isolation
Crosstalk
COM_, NO_ Off-
Capacitance
COM_ On-Capacitance
Output-Voltage Spike
Small-Signal Analog
Bandwidth
Charge Injection
LOGIC LEVELS
Logic-Input Low Voltage
Logic-Input High Voltage
Logic-Output Low Voltage
Logic-Output High Voltage
Logic-Input Capacitance
Logic-Input Leakage
V
IL
V
IH
V
OL
V
OH
C
IN
I
IN
t
ON
t
OFF
f
SW
dV/dt
V
ISO
V
CT
2
2
3.5
3.5
50
μs
μs
kHz
V/ns
dB
dB
pF
pF
mV
MHz
C
COM_(OFF),
V
COM_
= 0V, V
NO_
= 0V, f = 1MHz (Note 4)
C
NO_(OFF)
C
COM_(ON)
V
SPK
f
BW
V
COM_
= 0V, f = 1MHz (Note 4)
R
L
= 50_ (Note 4)
V
PP
= +100V, V
NN
= -100V, C
L
= 200pF
V
PP
= +40V, V
NN
= -160V, V
COM_
= 0V
Q
V
PP
= +100V, V
NN
= -100V, V
COM_
= 0V
V
PP
= +160V, V
NN
= -40V, V
COM_
= 0V
4
Maxim Integrated
MAX14802/MAX14803/MAX14803A
Low-Charge Injection, 16-Channel,
High-Voltage Analog Switches
TIMING CHARACTERISTICS
(V
DD
= +2.7V to +5.5V, V
PP
= +40V to V
NN
+ 200V, V
NN
= -40V to -160V, T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values
are at T
A
= +25°C.) (Note 2)
PARAMETER
LOGIC TIMING (Figure 1)
CLK Frequency
DIN to CLK Setup Time
DIN to CLK Hold Time
CLK to
LE
Setup Time
LE
Low-Pulse Width
CLR High-Pulse Width
CLK Rise and Fall Times
CLK to DOUT Delay
f
CLK
t
DS
t
DH
t
CS
t
WL
t
WC
t
R
, t
F
t
DO
V
DD
= +5V ±10%
V
DD
= +3V ±10%
V
DD
= +5V ±10%
V
DD
= +3V ±10%
V
DD
= +5V ±10%
V
DD
= +3V ±10%
V
DD
= +5V ±10%
V
DD
= +3V ±10%
V
DD
= +5V ±10%
V
DD
= +3V ±10%
V
DD
= +5V ±10%
V
DD
= +3V ±10%
V
DD
= +5V ±10%
V
DD
= +3V ±10%
V
DD
= +5V ±10%
V
DD
= +3V ±10%
6
12
10
16
3
3
36
65
14
22
20
40
50
50
42
80
20
10
MHz
ns
ns
ns
ns
ns
ns
ns
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Note 2:
All devices are 100% tested at T
A
= +70°C. Limits over the operating temperature range are guaranteed by design and
characterization.
Note 3:
The analog signal input V
COM_
and V
NO_
must satisfy V
NN
≤
(V
COM_
, V
NO_
)
≤
V
PP
, or remain unconnected during power-up
and power-down.
Note 4:
Guaranteed by characterization; not production tested.
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
