Diode
RapidSwitchingEmitterControlledDiode
IDV20E65D1
EmitterControlledDiodeRapid1Series
Datasheet
IndustrialPowerControl
IDV20E65D1
EmitterControlledDiodeRapid1Series
RapidSwitchingEmitterControlledDiode
Features:
•650VEmitterControlledtechnology
•Temperaturestablebehaviourofkeyparameters
•Lowforwardvoltage(V
F
)
•Ultrafastrecovery
•Lowreverserecoverycharge(Q
rr
)
•Lowreverserecoverycurrent(I
rrm
)
•175°Cjunctionoperatingtemperature
•Pb-freeleadplating;RoHScompliant
Applications:
•AC/DCconverters
•BoostdiodeinPFCstages
•Freewheelingdiodesininvertersandmotordrives
•Generalpurposeinverters
•Switchmodepowersupplies
C
A
C
A
KeyPerformanceandPackageParameters
Type
IDV20E65D1
V
rrm
650V
I
f
20A
V
f
,T
vj
=25°C
1.35V
T
vjmax
175°C
Marking
E20ED1
Package
PG-TO220-2-22 FP
2
Rev.2.1,2014-09-18
IDV20E65D1
EmitterControlledDiodeRapid1Series
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3
Rev.2.1,2014-09-18
IDV20E65D1
EmitterControlledDiodeRapid1Series
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Repetitivepeakreversevoltage,T
vj
≥25°C
Diodeforwardcurrent,limitedbyT
vjmax
T
C
=25°C
T
C
=100°C
Diodepulsedcurrent,t
p
limitedbyT
vjmax
Diode surge non repetitive forward current
T
C
=25°C,t
p
=10.0ms,sinehalfwave
PowerdissipationT
C
=25°C
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
ThermalResistance
Parameter
Characteristic
Diode thermal resistance,
1)
junction - case
Thermal resistance
junction - ambient
Symbol Conditions
Symbol
V
RRM
I
F
I
Fpuls
I
FSM
P
tot
T
vj
T
stg
Value
650
28.0
15.0
60.0
120.0
38.0
-40...+175
-55...+150
260
Unit
V
A
A
A
W
°C
°C
°C
Nm
M
0.6
Max.Value
Unit
R
th(j-c)
R
th(j-a)
4.00
65
K/W
K/W
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
StaticCharacteristic
V
F
I
F
=20.0A
T
vj
=25°C
T
vj
=125°C
T
vj
=175°C
V
R
=650V
T
vj
=25°C
T
vj
=175°C
-
-
-
-
-
1.35
1.30
1.26
2.0
350.0
1.70
-
-
40.0
-
Symbol Conditions
Value
min.
typ.
max.
Unit
Diode forward voltage
V
Reverse leakage current
I
R
µA
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Internal emitter inductance
measured 5mm (0.197 in.) from
case
L
E
-
7.0
-
nH
Symbol Conditions
Value
min.
typ.
max.
Unit
1)
Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.
4
Rev.2.1,2014-09-18
IDV20E65D1
EmitterControlledDiodeRapid1Series
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
min.
typ.
max.
Unit
DiodeCharacteristic,atT
vj
=25°C
Diode reverse recovery time
Diode reverse recovery charge
Diode peak rate of fall of reverse
recoverycurrentduringt
b
Diode reverse recovery time
Diode reverse recovery charge
Diode peak rate of fall of reverse
recoverycurrentduringt
b
t
rr
Q
rr
T
vj
=25°C,
V
R
=400V,
I
F
=20.0A,
di
F
/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
T
vj
=25°C,
V
R
=400V,
I
F
=20.0A,
di
F
/dt=300A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
-
-
-
-
42
0.45
15.6
-1400
-
-
-
-
ns
µC
A
A/µs
Diode peak reverse recovery current
I
rrm
di
rr
/dt
t
rr
Q
rr
-
-
-
-
65
0.31
7.6
-750
-
-
-
-
ns
µC
A
A/µs
Diode peak reverse recovery current
I
rrm
di
rr
/dt
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
min.
typ.
max.
Unit
DiodeCharacteristic,atT
vj
=175°C/125°C
Diode reverse recovery time
Diode reverse recovery charge
Diode peak rate of fall of reverse
recoverycurrentduringt
b
Diode reverse recovery time
Diode reverse recovery charge
Diode peak rate of fall of reverse
recoverycurrentduringt
b
t
rr
Q
rr
T
vj
=175°C,
V
R
=400V,
I
F
=20.0A,
di
F
/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
T
vj
=125°C,
V
R
=400V,
I
F
=20.0A,
di
F
/dt=300A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
-
-
-
-
73
1.12
24.5
-850
-
-
-
-
ns
µC
A
A/µs
Diode peak reverse recovery current
I
rrm
di
rr
/dt
t
rr
Q
rr
-
-
-
-
92
0.79
13.5
-880
-
-
-
-
ns
µC
A
A/µs
Diode peak reverse recovery current
I
rrm
di
rr
/dt
5
Rev.2.1,2014-09-18
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