AUTOMOTIVE GRADE
AUIRGP4063D
AUIRGP4063D-E
C
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
•
•
•
•
•
•
•
•
•
•
Low V
CE (ON)
Trench IGBT Technology
Low switching losses
Maximum Junction temperature 175 °C
5
μS
short circuit SOA
Square RBSOA
100% of the parts tested for 4X rated current (I
LM
)
Positive V
CE (ON)
Temperature co-efficient
Ultra fast soft Recovery Co-Pak Diode
Tight parameter distribution
Lead Free Package
V
CES
= 600V
I
C
= 60A, T
C
= 100°C
G
E
t
SC
5μs,
T
J(max)
= 175°C
n-channel
C
V
CE(on)
typ. = 1.6V
C
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low V
CE (ON)
and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
GC
E
E
GC
TO-247AD
AUIRGP4063D-E
TO-247AC
AUIRGP4063D
G
Gate
C
Collector
E
Emitter
Base part number
AUIRGP4063D
AUIRGP4063D-E
Package Type
TO-247
TO-247
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
AUIRGP4063D
AUIRGP4063D-E
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
ST G
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
600
100
60
144
192
82
50
192
±20
±30
330
170
-55 to +175
Units
V
c
A
e
Continuous Gate-to-Emitter Voltage
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
1
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© 2013 International Rectifier
July 12, 2013
AUIRGP4063D/E
Thermal Resistance
Parameter
R
JC
(IGBT)
R
JC
(Diode)
R
CS
R
JA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
80
Max.
0.45
0.92
–––
–––
Units
°C/W
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
V
(B R )CES
/ T
J
T emperature Coeff. of B reakdown Voltage
Min.
—
—
—
—
4.0
—
—
—
—
—
—
—
Typ.
—
0.30
1.6
1.9
2.0
—
-21
32
1.0
450
1.95
1.45
—
Max. Units
—
—
1.9
—
—
6.5
—
—
150
1000
2.91
—
±100
nA
V
V
S
μA
V
V
Conditions
V
GE
= 0V, I
C
= 150μA
Collector-to-E mitter B reakdown Voltage
600
f
R ef .F i g
CT 6
CT 6
5,6 ,7
9,10,11
V/°C V
GE
= 0V, I
C
= 1mA (25°C-175°C)
I
C
= 48A, V
GE
= 15V, T
J
= 25°C
I
C
= 48A, V
GE
= 15V, T
J
= 150°C
I
C
= 48A, V
GE
= 15V, T
J
= 175°C
V
CE
= V
GE
, I
C
= 1.4mA
V
CE
= 50V, I
C
= 48A, PW = 80μs
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
I
F
= 48A
I
F
= 48A, T
J
= 175°C
V
GE
= ±20V
V
CE(on)
V
GE(th)
V
GE(t h)
/ T J
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
9 , 10,
11, 12
mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C)
gfe
I
CES
V
FM
I
GES
8
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
95
28
35
625
1275
1900
60
40
145
35
1625
1585
3210
55
45
165
45
3025
245
90
Max. Units
140
42
53
1141
1481
2622
78
56
176
46
—
—
—
—
—
—
—
—
—
—
pF
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
ns
μJ
ns
μJ
nC
I
C
= 48A
V
GE
= 15V
V
CC
= 400V
Conditions
R ef .F i g
24
CT 1
I
C
= 48A, V
CC
= 400V, V
GE
= 15V
R
G
= 10 , L = 200μH, L
S
= 150nH, T
J
= 25°C
E nergy los s es include tail & diode revers e recovery
CT 4
I
C
= 48A, V
CC
= 400V, V
GE
= 15V
R
G
= 10 , L = 200μH, L
S
= 150nH, T
J
= 25°C
CT 4
I
C
= 48A, V
CC
= 400V, V
GE
=15V
R
G
=10 , L=200μH, L
S
=150nH, T
J
= 175°C
E nergy los s es include tail & diode revers e recovery
fÃ
13 , 15
CT 4
WF 1, W F 2
14 , 16
CT 4
WF 1
WF 2
23
I
C
= 48A, V
CC
= 400V, V
GE
= 15V
R
G
= 10 , L = 200μH, L
S
= 150nH
T
J
= 175°C
T
J
= 175°C, I
C
= 192A
FULL SQUARE
5
—
—
—
—
845
115
40
—
—
—
—
μs
μJ
ns
A
V
CC
= 480V, Vp =600V
Rg = 10 , V
GE
= +15V to 0V
V
CC
= 400V, Vp =600V
Rg = 10
, V
GE
= +15V to 0V
T
J
= 175°C
V
CC
= 400V, I
F
= 48A
V
GE
= 15V, Rg = 10 , L =200μH, L
s
= 150nH
4
CT 2
22 , CT 3
WF 4
17, 18, 19
20 , 2 1
WF 3
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 200μH, R
G
= 10.
This is only applied to TO-247AC package.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
2
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© 2013 International Rectifier
July 12, 2013
AUIRGP4063D/E
100
400
80
IC, Collector Current (A)
300
Ptot (W)
25
50
75
100
125
150
175
60
200
40
20
100
0
T C, Case Temperature (°C)
0
25
50
75
100
T C (°C)
125
150
175
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 2
- Power Dissipation vs. Case
Temperature
1000
100
10μsec
100μsec
100
IC (A)
IC (A)
10
1msec
DC
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
VCE (V)
100
1000
1
10
100
VCE (V)
1000
Fig. 3
- Forward SOA
T
C
= 25°C, T
J
175°C; V
GE
=15V
200
180
160
140
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 4
- Reverse Bias SOA
T
J
= 175°C; V
GE
=15V
200
180
160
140
ICE (A)
ICE (A)
120
100
80
60
40
20
0
0
2
4
6
120
100
80
60
40
20
0
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
8
10
0
2
4
6
8
10
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80μs
3
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© 2013 International Rectifier
VCE (V)
VCE (V)
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80μs
July 12, 2013
AUIRGP4063D/E
200
180
160
140
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
200
180
160
140
120
-40°c
25°C
175°C
ICE (A)
120
100
80
60
40
20
0
0
2
4
6
8
10
IF (A)
100
80
60
40
20
0
0.0
1.0
2.0
VF (V)
3.0
4.0
VCE (V)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80μs
20
18
16
14
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80μs
20
18
16
14
VCE (V)
10
8
6
4
2
0
5
10
VGE (V)
VCE (V)
12
ICE = 24A
ICE = 48A
ICE = 96A
12
10
8
6
4
2
0
ICE = 24A
ICE = 48A
ICE = 96A
15
20
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
20
18
16
14
VCE (V)
ICE (A)
200
180
160
140
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
T J = 175°C
T J = 25°C
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 24A
ICE = 48A
ICE = 96A
120
100
80
60
40
20
0
15
20
0
5
VGE (V)
10
15
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
4
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© 2013 International Rectifier
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10μs
July 12, 2013
AUIRGP4063D/E
6000
5000
EOFF
4000
1000
Swiching Time (ns)
Energy (μJ)
tdOFF
100
tdON
tF
tR
3000
2000
1000
0
0
50
IC (A)
EON
10
100
150
0
20
40
IC (A)
60
80
100
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10; V
GE
= 15V
5000
4500
4000
EOFF
EON
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10; V
GE
= 15V
1000
tdOFF
Swiching Time (ns)
Energy (μJ)
3500
3000
2500
2000
1500
1000
0
25
50
75
tR
100
tF
tdON
10
100
125
0
25
50
75
100
125
Rg ()
RG ()
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 200μH; V
CE
= 400V, I
CE
= 48A; V
GE
= 15V
45
40
35
30
IRR (A)
Fig. 16
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 200μH; V
CE
= 400V, I
CE
= 48A; V
GE
= 15V
45
40
35
IRR (A)
RG = 10
25
20
15
10
5
0
0
20
RG = 22
RG = 47
RG = 100
30
25
20
15
10
40
IF (A)
60
80
100
0
25
50
75
100
125
RG (
Fig. 17
- Typ. Diode I
RR
vs. I
F
T
J
= 175°C
5
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© 2013 International Rectifier
Fig. 18
- Typ. Diode I
RR
vs. R
G
T
J
= 175°C
July 12, 2013
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