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Jantxv2N2484UB: 产品描述Bipolar Transistors - BJT Small-Signal BJT; 产品类别分立半导体晶体管; 文件大小42KB，共2页; 制造商Microsemi; 官网地址https://www.microsemi.com

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Jantxv2N2484UB概述

Bipolar Transistors - BJT Small-Signal BJT

Jantxv2N2484UB规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
包装说明	SMALL OUTLINE, R-CDSO-N3
针数	3
Reach Compliance Code	compliant
ECCN代码	EAR99
最大集电极电流 (IC)	0.05 A
集电极-发射极最大电压	60 V
配置	SINGLE
最小直流电流增益 (hFE)	225
JESD-30 代码	R-CDSO-N3
JESD-609代码	e0
元件数量	1
端子数量	3
最高工作温度	200 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	NPN
最大功率耗散 (Abs)	0.36 W
认证状态	Qualified
参考标准	MIL-19500/376
表面贴装	YES
端子面层	Tin/Lead (Sn/Pb)
端子形式	NO LEAD
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管元件材料	SILICON
Base Number Matches	1

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

NPN SILICON LOW POWER TRANSISTOR

Qualified per MIL-PRF-19500/376

DEVICES

LEVELS

2N2484UA

2N2484UB

2N2484UBC *

Available to JANS quality level only.

ABSOLUTE MAXIMUM RATINGS

= +25°C unless otherwise noted)

Parameters / Test Conditions

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Total Power Dissipation @ T

= +25°C

(1)

JAN

JANTX

JANTXV

JANS

Symbol

CEO

CBO

EBO

, T

stg

Value

6.0

360

-65 to +200

Unit

Vdc

mAdc

°C

TO-18 (TO-206AA)

2N2484

Operating & Storage Junction Temperature Range

THERMAL CHARACTERISTICS

Parameters / Test Conditions

Thermal Resistance, Ambient-to-Case

2N2484

2N2484UA

2N2484UB, UBC

1. See 19500/376 for Thermal Performance Curves.

2N2484UA

Symbol

θJA

Value

325

275

350

Unit

°C/W

ELECTRICAL CHARACTERISTICS

= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERTICS

Collector-Emitter Breakdown Voltage

= 10mAdc

Collector-Emitter Cutoff Current

= 45Vdc

Collector-Base Cutoff Current

= 45Vdc

= 60Vdc

Collector-Emitter Cutoff Current

= 5.0Vdc

(BR)CEO

CES

5.0

2.0

Vdc

ηAdc

μAdc

ηAdc

2N2484UB, UBC

(UBC = Ceramic Lid Version)

Symbol

Min.

Max.

Unit

CBO

CEO

T4-LDS-0058 Rev. 1 (080853)

Page 1 of 2

Jantxv2N2484UB相似产品对比

	Jantxv2N2484UB	JANTXV2N2484UA	2N2484UB	Jantx2N2484	JAN2N2484UA
描述	Bipolar Transistors - BJT Small-Signal BJT	Bipolar Transistors - BJT Small-Signal BJT	Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3	Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN	Bipolar Transistors - BJT Small-Signal BJT
是否Rohs认证	不符合	不符合	不符合	不符合	不符合
包装说明	SMALL OUTLINE, R-CDSO-N3	SMALL OUTLINE, R-XDSO-N4	HERMETIC SEALED, CERAMIC, CERSOT-3	TO-18, 3 PIN	SMALL OUTLINE, R-XDSO-N4
针数	3	4	3	3	4
Reach Compliance Code	compliant	compliant	unknown	unknown	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99
最大集电极电流 (IC)	0.05 A	0.05 A	0.05 A	0.05 A	0.05 A
集电极-发射极最大电压	60 V	60 V	60 V	60 V	60 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	225	225	225	225	225
JESD-30 代码	R-CDSO-N3	R-XDSO-N4	R-XDSO-N3	O-MBCY-W3	R-XDSO-N4
JESD-609代码	e0	e0	e0	e0	e0
元件数量	1	1	1	1	1
端子数量	3	4	3	3	4
最高工作温度	200 °C	200 °C	200 °C	200 °C	200 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED	UNSPECIFIED	METAL	UNSPECIFIED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	ROUND	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	CYLINDRICAL	SMALL OUTLINE
极性/信道类型	NPN	NPN	NPN	NPN	NPN
认证状态	Qualified	Qualified	Not Qualified	Not Qualified	Qualified
表面贴装	YES	YES	YES	NO	YES
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	TIN LEAD	TIN LEAD	Tin/Lead (Sn/Pb)
端子形式	NO LEAD	NO LEAD	NO LEAD	WIRE	NO LEAD
端子位置	DUAL	DUAL	DUAL	BOTTOM	DUAL
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON
是否无铅	含铅	含铅	-	含铅	含铅
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED
最大功率耗散 (Abs)	0.36 W	0.36 W	0.36 W	-	0.36 W
参考标准	MIL-19500/376	MIL-19500/376	-	MIL-19500/376	MIL-19500/376
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED
Base Number Matches	1	1	-	-	1

Jantxv2N2484UB

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Jantxv2N2484UB概述

Jantxv2N2484UB规格参数

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