AUTOMOTIVE GRADE
AUIRFS3004-7P
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
40V
0.90m
1.25m
400A
240A
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and wide variety
of other applications.
Base Part Number
AUIRFS3004-7P
Absolute Maximum Ratings
Package Type
D
2
Pak 7 Pin
D
2
Pak 7 Pin
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRFS3004-7P
AUIRFS3004-7PTRL
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
400
280
240
1610
380
2.5
± 20
290
See Fig.14,15, 22a, 22b
2.0
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R
JC
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount)
Typ.
–––
–––
Max.
0.40
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-10-20
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
R
DS(on)
V
GS(th)
gfs
R
G
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
Min.
40
–––
–––
2.0
1300
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
0.90
–––
–––
2.0
–––
–––
–––
–––
160
42
65
95
23
240
91
160
9130
2020
990
2590
2650
–––
1.25
4.0
–––
–––
20
250
100
-100
240
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
0.038 –––
AUIRFS3004-7P
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 5mA
m V
GS
= 10V, I
D
= 195A
V
V
DS
= V
GS
, I
D
= 250µA
S V
DS
= 10V, I
D
= 195A
V
DS
= 40V, V
GS
= 0V
µA
V
DS
= 40V,V
GS
= 0V,T
J
=125°C
nA
V
GS
= 20V
V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
I
D
= 180A
V
DS
= 20V
nC
V
GS
= 10V
V
DD
= 26V
I
D
= 240A
ns
R
G
= 2.7
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
pF
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 32V
V
GS
= 0V, V
DS
= 0V to 32V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 195A,V
GS
= 0V
T
J
= 25°C
V
DD
= 34V
ns
T
J
= 125°C
I
F
= 240A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
Diode Forward Voltage
V
SD
t
rr
Q
rr
I
RRM
t
on
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Typ. Max. Units
––– 400
–––
–––
49
51
37
41
3.2
1610
1.3
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax,
starting T
J
= 25°C, L = 0.01mH, R
G
= 25, I
AS
= 240A, V
GS
=10V. Part not recommended for use above this value.
I
SD
240A,
di/dt
740A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs;
duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application
note #AN-994
R
is measured at T
J
approximately 90°C.
JC
value shown is at time zero
R
2
2015-10-20
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
AUIRFS3004-7P
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
10
100
1
4.5V
0.1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 25°C
10
0.1
4.5V
60µs PULSE WIDTH
Tj = 175°C
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
1000
Fig. 2
Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 195A
ID, Drain-to-Source Current (A)
VGS = 10V
100
T J = 175°C
10
T J = 25°C
1.5
1.0
1
VDS = 25V
60µs
PULSE WIDTH
0.1
3
4
5
6
7
8
0.5
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig. 4
Normalized On-Resistance vs. Temperature
14.0
ID = 180A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
50
C, Capacitance (pF)
10000
C iss
C oss
C rss
VDS = 32V
VDS = 20V
1000
100
1
10
VDS , Drain-to-Source Voltage (V)
100
100
150
200
250
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
2015-10-20
1000
10000
AUIRFS3004-7P
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
100µsec
ISD, Reverse Drain Current (A)
100
10
T J = 25°C
ID, Drain-to-Source Current (A)
T J = 175°C
100
1msec
10msec
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
VSD , Source-to-Drain Voltage (V)
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
1
10
100
VDS , Drain-to-Source Voltage (V)
DC
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
420
360
ID, Drain Current (A)
Fig 8.
Maximum Safe Operating Area
50
Id = 5mA
48
Limited By Package
300
240
180
120
60
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
46
44
42
40
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
EAS , Single Pulse Avalanche Energy (mJ)
3.5
3.0
2.5
Energy (µJ)
Fig 10.
Drain-to-Source Breakdown Voltage
1200
1000
800
600
400
200
0
ID
TOP
44A
80A
BOTTOM 240A
2.0
1.5
1.0
0.5
0.0
-5
0
5
10 15 20 25 30 35 40 45
25
50
75
100
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 11.
Typical C
OSS
Stored Energy
4
Fig 12.
Maximum Avalanche Energy vs. Drain Current
2015-10-20
1
Thermal Response ( Z thJC ) °C/W
AUIRFS3004-7P
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
J
R
1
R
1
J
1
2
R
2
R
2
R
3
R
3
3
R
4
R
4
C
1
2
3
4
4
C
Ri (°C/W)
0.00757
0.06508
0.18313
I
(sec)
0.000006
0.000064
0.001511
Ci=
iRi
Ci=
iRi
0.14378
0.009800
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
0.001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
100
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 150°C and
Tstart =25°C (Single Pulse)
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Avalanche Current vs. Pulse width
320
280
EAR , Avalanche Energy (mJ)
240
200
160
120
80
40
0
25
50
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 240A
75
100
125
150
175
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as T
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 13, 14).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
T/
Z
thJC
I
av
= 2T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Starting T J , Junction Temperature (°C)
Fig 15.
Maximum Avalanche Energy vs. Temperature
5
2015-10-20
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