VS-ETU3006-M3, VS-ETU3006FP-M3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 30 A FRED Pt
®
4
FEATURES
• Low forward voltage drop
• Ultrafast soft recovery time
• 175 °C operating junction temperature
1
2
1
2
• Low leakage current
• Fully isolated package (V
INS
= 2500 V
RMS
)
• True 2 pin package
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
2L TO-220 FullPAK
2L TO-220AC
Base
cathode
4
DESCRIPTION
1
Cathode
2
Anode
1
Cathode
2
Anode
VS-ETU3006-M3
VS-ETU3006FP-M3
Ultralow V
F
, soft-switching ultrafast rectifiers optimized for
Discontinuous (Critical) Mode (DCM) Power Factor
Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Package
Circuit configuration
30 A
600 V
1.15 V
30 ns
175 °C
2L TO-220AC, 2L TO-220 FullPAK
Single
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units and DVD AC/DC power supplies.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current in DC
Non-repetitive peak surge current
Operating junction and storage temperatures
FullPAK
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 130 °C
T
C
= 72 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
600
30
200
-65 to +175
°C
UNITS
V
A
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
Series inductance
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 30 A
I
F
= 30 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
1.4
1.15
0.02
30
20
8
MAX.
-
2.0
1.35
30
250
-
-
μA
pF
nH
V
UNITS
Revision: 26-Oct-17
Document Number: 93538
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETU3006-M3, VS-ETU3006FP-M3
www.vishay.com
Vishay Semiconductors
SYMBOL
t
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 30 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
MIN.
-
-
-
-
-
-
-
TYP.
30
45
100
5.6
10
127
580
MAX.
45
-
-
-
-
-
-
A
nC
ns
UNITS
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
Peak recovery current
Reverse recovery charge
I
RRM
Q
rr
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction-to-case
Thermal resistance,
junction-to-ambient
Typical thermal resistance,
case-to-heatsink
Weight
Mounting torque
Marking device
Case style 2L TO-220AC
Case style 2L TO-220 FullPAK
FullPAK
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth and greased
TEST CONDITIONS
MIN.
-65
-
-
-
-
-
-
6
(5)
TYP.
-
0.84
3.2
-
0.5
2
0.07
-
MAX.
175
1.3
3.8
70
-
-
-
12
(10)
ETU3006
ETU3006FP
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Revision: 26-Oct-17
Document Number: 93538
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETU3006-M3, VS-ETU3006FP-M3
www.vishay.com
Vishay Semiconductors
1000
100
175°
C
150°
C
10
1
0.1
0.01
0.001
0
100
200
300
400
500
600
125°
C
100°
C
75°
C
50°
C
25°
C
1000
Reverse Current - I
R
(µA)
Instantaneous Forward Current - I
F
(A)
100
Tj = 175°
C
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
Tj = 150°
C
Junction Capacitance - C
T
(pF)
10
100
Tj = 25°
C
10
1
0.0
0.5
1.0
1.5
2.0
2.5
1
0
100
200
300
400
500
600
Forward Voltage Drop - V
F
(V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
Thermal Impedance Z
thJC
(°C/W)
D = 0.5
1
D = 0.2
D = 0.1
D = 0.05
0.1
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 26-Oct-17
Document Number: 93538
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETU3006-M3, VS-ETU3006FP-M3
www.vishay.com
10
Vishay Semiconductors
Thermal Impedance Z
thJC
(°C/W)
D = 0.5
D = 0.2
1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
0.1
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 5 - Maximum Thermal Impedance Z
thJC
Characteristics (FULL-PAK)
180
Allowable Case Temperature (°C)
180
Allowable Case Temperature (°C)
170
160
150
140
130
120
0
5
10 15 20 25 30 35
Average Forward Current - I
F
(AV)
(A)
DC
160
140
120
100
80
60
40
20
0
5
10
15
20
25
30
35
Average Forward Current - I
F
(AV)
(A)
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
DC
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
60
Average Power Loss ( Watts )
50
40
30
20
10
0
0
5
RMS Limit
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
10 15 20 25 30 35 40 45
Average Forward Current - I
F
(AV)
(A)
Fig. 8 - Forward Power Loss Characteristics
Revision: 26-Oct-17
Document Number: 93538
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETU3006-M3, VS-ETU3006FP-M3
www.vishay.com
130
120
110
100
90
If = 30 A, 125°
C
Vishay Semiconductors
1800
1600
1400
1200
Qrr ( nC )
trr ( ns )
80
70
60
50
40
30
20
10
100
1000
typical value
If = 30 A, 25°
C
1000
800
600
400
200
If = 30 A, 125°
C
If = 30 A, 25°
C
typical value
0
100
1000
di
F
/dt (A/µs )
Fig. 9 - Typical Reverse Recovery vs. dI
F
/dt
di
F
/dt (A/µs )
Fig. 10 - Typical Stored Charge vs. dI
F
/dt
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 11 - Reverse Recovery Waveform and Definitions
Revision: 26-Oct-17
Document Number: 93538
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
