MMBT3416LT3G
General Purpose Amplifier
NPN Silicon
Features
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Collector Current
−
Continuous
Symbol
V
CEO
V
EBO
I
C
Value
40
4.0
100
Unit
Vdc
Vdc
mAdc
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina Substrate,
(Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
417
−55
to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
3
R
qJA
P
D
R
qJA
T
J
, T
stg
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
GP M
G
G
1
GP = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
MMBT3416LT3G
Package
SOT−23
(Pb−Free)
Shipping
†
10,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1998
October, 2016
−
Rev. 3
1
Publication Order Number:
MMBT3416LT3/D
MMBT3416LT3G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(I
C
= 1.0 mAdc, I
B
= 0)
Emitter
−Base
Breakdown Voltage
(I
E
= 100
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 25 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 5.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 2.0 mAdc, V
CE
= 4.5 Vdc)
Collector
−Emitter
Saturation Voltage
(I
C
= 50 mAdc, I
B
= 3.0 mAdc)
Base
−Emitter
Saturation Voltage
(I
C
= 50 mAdc, I
B
= 3.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Collector Cutoff Current
(V
CB
= 18 Vdc, T
A
= 100°C)
Small−Signal Current Gain
(I
C
= 2.0 mAdc, V
CE
= 4.0 Vdc, f = 1 kHz)
I
CBO2
h
FE
−
75
15
−
mAdc
−
h
FE
V
CE(sat)
V
BE(sat)
75
−
0.6
225
0.3
1.3
−
Vdc
Vdc
V
(BR)CEO
V
(BR)EBO
I
CBO1
I
EBO
40
4.0
−
−
−
−
100
100
Vdc
Vdc
nAdc
nAdc
Symbol
Min
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+ 3.0 V
300 ns
DUTY CYCLE = 2%
- 0.5 V
<1.0 ns
+10.9 V
10 k
0
C
S
< 4.0 pF*
- 9.1 V
< 1.0 ns
1N916
C
S
< 4.0 pF
275
+ 3.0 V
t
1
+10.9 V
10 k
275
10 < t
1
< 500
ms
DUTY CYCLE = 2%
*Total shunt capacitance of test jig and connectors
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
www.onsemi.com
2
MMBT3416LT3G
TYPICAL NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
20
I
C
= 1.0 mA
en, NOISE VOLTAGE (nV)
300
mA
BANDWIDTH = 1.0 Hz
R
S
= 0
In, NOISE CURRENT (pA)
100
50
20
10
5.0
2.0
1.0
0.5
0.2
2.0
10
20
50
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10 k
0.1
10
20
50
100 200
500 1 k
f, FREQUENCY (Hz)
2k
5k
10
30
mA
10
mA
I
C
= 1.0 mA
300
mA
100
mA
BANDWIDTH = 1.0 Hz
R
S
≈ ∞
10
7.0
5.0
10
mA
3.0
100
mA
30
mA
Figure 3. Noise Voltage
Figure 4. Noise Current
NOISE FIGURE CONTOURS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
500 k
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
200 k
100 k
50 k
20 k
10 k
5k
2k
1k
500
200
100
50
10
20
30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
500 700
1k
BANDWIDTH = 1.0 Hz
1M
500 k
200 k
100 k
50 k
20 k
10 k
5k
2k
1k
500
200
100
10
20
30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
BANDWIDTH = 1.0 Hz
2.0 dB
3.0 dB 4.0 dB
6.0 dB
10 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
500 700
1
Figure 5. Narrow Band, 100 Hz
500 k
RS , SOURCE RESISTANCE (OHMS)
200 k
100 k
50 k
20 k
10 k
5k
2k
1k
500
200
100
50
10
20
30
50 70 100
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
200 300
500 700
1k
10 Hz to 15.7 kHz
Figure 6. Narrow Band, 1.0 kHz
Noise Figure is defined as:
en2
)
4KTRS
)
In 2RS2 1 2
NF
+
20 log10
4KTRS
e
n
I
n
K
T
R
S
= Noise Voltage of the Transistor referred to the input. (Figure
= Noise Current of the Transistor referred to the input. (Figure
= Boltzman’s Constant (1.38 x 10
−23
j/°K)
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Wideband
www.onsemi.com
3
MMBT3416LT3G
TYPICAL STATIC CHARACTERISTICS
400
T
J
= 125°C
h FE, DC CURRENT GAIN
200
25°C
- 55°C
100
80
60
40
0.004 0.006 0.01
MPS390
V
CE
= 1.0 V
4
V
CE
= 10 V
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0
I
C
, COLLECTOR CURRENT (mA)
3.0
5.0 7.0 10
20
30
50
70 100
Figure 8. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
IC, COLLECTOR CURRENT (mA)
MPS3904
T
J
= 25°C
100
0.8
I
C
= 1.0 mA
10 mA
50 mA
T
A
= 25°C
PULSE WIDTH = 300
ms
80 DUTY CYCLE
≤
2.0%
I
B
= 500
mA
400
mA
300
mA
0.6
100 mA
60
200
mA
40
100
mA
20
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
I
B
, BASE CURRENT (mA)
0
5.0 10
20
0
5.0
10
15
20
25
30
35
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 9. Collector Saturation Region
Figure 10. Collector Characteristics
T
J
= 25°C
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
V
BE(on)
@ V
CE
= 1.0 V
0.4
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
0.1
0.2
0.5 1.0
2.0
5.0
10
20
I
C
, COLLECTOR CURRENT (mA)
50
100
V
BE(sat)
@ I
C
/I
B
= 10
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
1.4
1.6
0.8
*APPLIES for I
C
/I
B
≤
h
FE
/2
25°C to 125°C
0
*q
VC
for V
CE(sat)
- 55°C to 25°C
- 0.8
25°C to 125°C
- 1.6
q
VB
for V
BE
- 2.4
0.1
0.2
- 55°C to 25°C
50
1
1.0 2.0
5.0 10 20
0.5
I
C
, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
www.onsemi.com
4
MMBT3416LT3G
TYPICAL DYNAMIC CHARACTERISTICS
300
200
100
70
50
30
20
10
7.0
5.0
3.0
1.0
2.0
t
d
@ V
BE(off)
= 0.5 Vdc
t
r
1000
V
CC
= 3.0 V
I
C
/I
B
= 10
T
J
= 25°C
700
500
300
200
t, TIME (ns)
100
70
50
30
20
10
1.0
t
f
t
s
t, TIME (ns)
V
CC
= 3.0 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
2.0
3.0
20 30
5.0 7.0 10
I
C
, COLLECTOR CURRENT (mA)
50
70 1
20 30
5.0 7.0 10
3.0
I
C
, COLLECTOR CURRENT (mA)
50 70
100
Figure 13. Turn−On Time
f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
Figure 14. Turn−Off Time
500
T
J
= 25°C
f = 100 MHz
300
200
5.0 V
C, CAPACITANCE (pF)
V
CE
= 20 V
10
7.0
5.0
C
ib
T
J
= 25°C
f = 1.0 MHz
C
ob
3.0
2.0
100
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
I
C
, COLLECTOR CURRENT (mA)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 15. Current−Gain — Bandwidth Product
Figure 16. Capacitance
20
hoe, OUTPUT ADMITTANCE (
m
mhos)
hie , INPUT IMPEDANCE (k
Ω
)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.5
20
1.0 2.0
5.0
10
I
C
, COLLECTOR CURRENT (mA)
50
100
MPS3904
h
fe
≈
200 @ I
C
= 1.0 mA
V
CE
= 10 Vdc
f = 1.0 kHz
T
A
= 25°C
200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
0.1
0.2
0.5
20
1.0 2.0
5.0
10
I
C
, COLLECTOR CURRENT (mA)
50
1
V
CE
= 10 Vdc
f = 1.0 kHz
T
A
= 25°C
MPS3904
h
fe
≈
200 @ I
C
= 1.0 mA
Figure 17. Input Impedance
Figure 18. Output Admittance
www.onsemi.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
