PD - 95742
IRG4BC20FPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-220AB package
Lead-Free
C
Fast Speed IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.66V
@V
GE
= 15V, I
C
= 9.0A
n-channel
Benefits
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
600
16
9.0
64
64
± 20
5.0
60
24
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbfin (1.1Nm)
Units
V
A
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
0.5
2.0 (0.07)
Max.
2.1
80
Units
°C/W
g (oz)
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8/23/04
1
IRG4BC20FPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
/∆T
J
V
CE(ON)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
I
GES
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
600
V
V
GE
= 0V, I
C
= 250µA
Emitter-to-Collector Breakdown Voltage
18
V
V
GE
= 0V, I
C
= 1.0A
Temperature Coeff. of Breakdown Voltage 0.72
V/°C V
GE
= 0V, I
C
= 1.0mA
1.66 2.0
I
C
= 9.0A
V
GE
= 15V
Collector-to-Emitter Saturation Voltage
2.06
I
C
= 16A
See Fig.2, 5
V
1.76
I
C
= 9.0A , T
J
= 150°C
Gate Threshold Voltage
3.0
6.0
V
CE
= V
GE
, I
C
= 250µA
Temperature Coeff. of Threshold Voltage
-11
mV/°C V
CE
= V
GE
, I
C
= 250µA
Forward Transconductance
2.9 5.1
S
V
CE
=
100V, I
C
= 9.0A
250
V
GE
= 0V, V
CE
= 600V
Zero Gate Voltage Collector Current
µA
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
1000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
Gate-to-Emitter Leakage Current
±100
nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
Typ. Max. Units
Conditions
27
40
I
C
= 9.0A
4.2 6.2
nC
V
CC
= 400V
See Fig. 8
9.9
15
V
GE
= 15V
24
17
T
J
= 25°C
ns
190 280
I
C
= 9.0A, V
CC
= 480V
210 320
V
GE
= 15V, R
G
= 50Ω
0.07
Energy losses include "tail"
0.60
mJ See Fig. 9, 10, 14
0.67 1.1
24
T
J
= 150°C,
17
I
C
= 9.0A, V
CC
= 480V
ns
300
V
GE
= 15V, R
G
= 50Ω
340
Energy losses include "tail"
1.30
mJ See Fig. 11, 14
7.5
nH
Measured 5mm from package
540
V
GE
= 0V
37
pF
V
CC
= 30V
See Fig. 7
7.0
= 1.0MHz
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 50Ω,
(See fig. 13a)
Pulse width
≤
80µs; duty factor
≤
0.1%.
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BC20FPbF
25
For both:
Triangular wave:
I
20
Duty cycle: 50%
T
J
= 125°C
T
sink
= 90°C
Gate drive as specified
Power Dissipation = 13W
Load Current ( A )
Clamp voltage:
80% of rated
15
Square wave:
60% of rated
voltage
10
I
5
Ideal diodes
0
0.1
1
10
A
100
f, Frequency (kHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
I
C
, Collector-to-Emitter Current (A)
T
J
= 25
o
C
T
J
= 150
o
C
10
I
C
, Collector-to-Emitter Current (A)
T
J
= 150
o
C
10
T
J
= 25
o
C
1
1
V
GE
= 15V
20µs PULSE WIDTH
10
1
5
6
7
8
9
V
CC
= 50V
5µs PULSE WIDTH
10
11
12
13
14
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
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Fig. 3
- Typical Transfer Characteristics
3
IRG4BC20FPbF
16
3.0
12
8
V
CE
, Collector-to-Emitter Voltage(V)
V
GE
= 15V
80 us PULSE WIDTH
I
C
= 18 A
Maximum DC Collector Current(A)
2.0
I
C
=
9.0
A
9
A
4
I
C
= 4.5 A
0
25
50
75
100
125
150
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
C
, Case Temperature (
°
C)
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
Thermal Response (Z
thJC
)
1
0.50
0.20
0.10
0.05
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
t
2
0.1
0.02
0.01
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC20FPbF
1000
800
V
GE
, Gate-to-Emitter Voltage (V)
100
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 9.0A
16
C, Capacitance (pF)
600
Cies
12
400
8
200
Coes
Cres
4
0
1
10
0
0
5
10
15
20
25
30
V
CE
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.72
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V
CC
= 480V
V
GE
= 15V
T
J
= 25
°
C
0.71
I
C
= 9.0A
10
R
G
= 50Ohm
Ω
V
GE
= 15V
V
CC
= 480V
I
C
=
18
A
I
C
=
9.0 A
9
A
0.70
1
0.68
I
C
=
4.5
A
0.67
0.66
0
10
20
30
40
50
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
R
G
, Gate Resistance (Ohm)
Ω
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
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Fig. 10
- Typical Switching Losses vs.
Junction Temperature
5
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