PD - 96999B
IRF6616
DirectFET Power MOSFET
l
l
l
l
l
l
l
RoHS compliant containing no lead or bormide
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques
Typical values (unless otherwise specified)
V
DSS
V
GS
R
DS(on)
R
DS(on)
40V max ±20V max 3.7mΩ@ 10V 4.6mΩ@ 4.5V
Q
g
tot
Q
gd
9.4nC
Q
gs2
2.4nC
Q
rr
33nC
Q
oss
15nC
V
gs(th)
1.8V
29nC
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
DirectFET ISOMETRIC
Description
The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve low
combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package
is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6616 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6616 is ideal for secondary side synchronous rectification applications up to 100W, and can also be
used in some non-isolated synchronous buck applications where 30V devices do not provide enough voltage headroom.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
12
Typical RDS(on) ( mΩ)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
Ãg
h
VGS, Gate-to-Source Voltage (V)
40
±20
19
15
106
150
36
15
6
5
4
3
2
1
0
0
10
20
30
ID= 15A
VDS = 32V
VDS= 20V
A
mJ
A
10
8.0
6.0
4.0
2.0
0
2.0
4.0
6.0
8.0
ID = 19A
T J = 125°C
T J = 25°C
10.0
40
VGS, Gate-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.32mH, R
G
= 25Ω, I
AS
=15A.
11/16/05
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1
IRF6616
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
40
–––
–––
–––
1.35
–––
–––
–––
–––
–––
75
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
37
3.7
4.6
1.8
-5.5
–––
–––
–––
–––
–––
29
8.6
2.4
9.4
8.6
12
15
1.3
15
19
21
4.4
3765
560
285
Max.
–––
–––
5.0
6.2
2.25
–––
1.0
150
100
-100
–––
44
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
V
Conditions
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 19A
c
V
GS
= 4.5V, I
D
= 15A
c
V
mV/°C
µA
nA
S
V
DS
= 32V, V
GS
= 0V
V
DS
= 32V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 20V, I
D
= 15A
V
DS
= 20V
nC
V
GS
= 4.5V
I
D
= 15A
See Fig. 15
nC
Ω
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 16V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
c
I
D
= 15A
ns
Clamped Inductive Load
V
GS
= 0V
pF
V
DS
= 20V
ƒ = 1.0MHz
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
d
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
–––
0.8
15
33
150
1.0
23
50
V
ns
nC
Min.
–––
Typ.
–––
Max.
110
Units
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 15A, V
GS
= 0V
c
T
J
= 25°C, I
F
= 15A
di/dt = 500A/µs
c
Notes:
Pulse width
≤
400µs; duty cycle
≤
2%.
Repetitive rating; pulse width limited by max. junction temperature.
2
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IRF6616
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
f
Parameter
Max.
2.8
1.8
89
270
-40 to + 150
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
100
g
dg
eg
fg
Parameter
Typ.
–––
12.5
20
–––
1.0
0.022
Max.
45
–––
–––
1.4
–––
Units
°C/W
Ã
W/°C
Thermal Response ( Z thJA )
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
A
τ
1
τ
2
τ
3
τ
4
τ
4
τ
A
1
Ri (°C/W)
1.2801
8.7256
21.750
13.251
τi
(sec)
0.000322
0.164798
2.25760
69
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-005
0.0001
0.001
0.01
0.1
1
10
100
0.001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Surface mounted on 1 in. square Cu board, steady state.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
T
C
measured with thermocouple incontact with top (Drain) of part.
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB
with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with
small clip heatsink (still air)
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3
IRF6616
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
BOTTOM
100
BOTTOM
2.5V
10
10
2.5V
1
0.1
1
≤
60µs PULSE WIDTH
Tj = 25°C
10
100
≤
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
Fig 5.
Typical Output Characteristics
2.0
ID = 15A
ID, Drain-to-Source Current
(Α)
100
Typical RDS(on) (Normalized)
T J = 150°C
T J = 25°C
T J = -40°C
1.5
V GS = 10V
V GS = 4.5V
10
1.0
1.0
VDS = 10V
≤
60µs PULSE WIDTH
0.1
1.5
2.0
2.5
3.0
3.5
4.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 6.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
Fig 7.
Normalized On-Resistance vs. Temperature
12
T J = 25°C
10
Typical RDS(on) ( mΩ)
C oss = C ds + C gd
C, Capacitance(pF)
10000
Ciss
8
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
6
1000
Coss
Crss
4
100
1
10
VDS, Drain-to-Source Voltage (V)
100
2
0
20
40
60
80
100 120 140 160
ID, Drain Current (A)
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 9.
Typical On-Resistance vs.
Drain Current and Gate Voltage
4
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IRF6616
1000.00
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100.00
10.00
T J = 150°C
T J = 25°C
T J = -40°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100µsec
1msec
10msec
T A = 25°C
Tj = 150°C
Single Pulse
0
1
10
100
1000
1.00
1
0.10
VGS = 0V
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-to-Drain Voltage (V)
0.1
VDS , Drain-to-Source Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
120
100
ID, Drain Current (A)
Typical VGS(th) Gate threshold Voltage (V)
2.5
Fig11.
Maximum Safe Operating Area
80
60
40
20
0
25
50
75
100
125
150
T C , Case Temperature (°C)
2.0
ID = 250µA
1.5
1.0
-75
-50
-25
0
25
50
75
100
125
150
T J , Junction Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Case Temperature
200
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
I D
TOP
3.7A
4.3A
BOTTOM
15A
EAS, Single Pulse Avalanche Energy (mJ)
160
120
80
40
0
25
50
75
100
125
150
Starting T J, Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy Vs. Drain Current
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