VS-VSKDU300/06PbF
www.vishay.com
Vishay Semiconductors
HEXFRED
®
Ultra Fast Diodes, 300 A
(INT-A-PAK Power Modules)
FEATURES
• Electrically insulated by DBC ceramic
• 3500 V
RMS
isolating voltage
• Standard JEDEC
®
package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Case style INT-A-PAK
INT-A-PAK
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
600 V
300 A at 48 °C
INT-A-PAK
PRIMARY CHARACTERISTICS
V
R
I
F(AV)
at T
C
Package
Circuit configuration
Two diodes doubler circuit
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current per leg
Single pulse forward current
Maximum power dissipation per leg
Operating junction and storage
temperature range
RMS insulation voltage
SYMBOL
V
R
I
F
I
FSM
P
D
T
J
, T
Stg
V
INS
50 Hz, circuit to base,
all terminals shorted, t = 1 s
T
C
= 25 °C
T
C
= 100 °C
Limited by junction temperature
T
C
= 25 °C
T
C
= 100 °C
TEST CONDITIONS
VALUES
600
435
230
TBD
781
313
-40 to +150
3500
W
°C
V
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown voltage
SYMBOL
V
BR
TEST CONDITIONS
I
R
= 500 μA
I
F
= 150 A
Forward voltage drop per leg
V
FM
I
F
= 300 A
I
F
= 150 A, T
J
= 125 °C
I
F
= 300 A, T
J
= 125 °C
Maximum reverse leakage current
I
RM
T
J
= 150 °C, V
R
= 600 V
MIN.
600
-
-
-
-
-
TYP.
-
1.23
1.43
1.11
1.39
-
MAX.
-
1.53
1.96
1.29
1.73
50
mA
V
UNITS
Revision: 05-May-17
Document Number: 94549
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKDU300/06PbF
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
SYMBOL
t
rr
I
rr
Q
rr
dI
(rec)M
/dt
s
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 125 °C
I
F
= 50 A, T
J
= 25 °C, dI/dt = 400 A/μs, V
R
= 200 V
I
F
= 50 A, T
J
= 125 °C, dI/dt = 400 A/μs, V
R
= 200 V
I
F
= 50 A
dI/dt = 200 A/μs
V
R
= 400 V (per leg)
TEST CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
TYP.
130
195
11
20
670
1800
-
0.2
0.22
MAX.
165
260
18
30
1485
3900
400
-
-
UNITS
ns
Peak recovery current
A
Reverse recovery charge
Peak rate of recovery current
Softness factor per leg
nC
A/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
and storage temperature range
Maximum thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink
Mounting
torque ± 10 %
to heatsink
busbar
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, flat, smooth and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow the spread of the compound.
TEST CONDITIONS
VALUES
-40 to +150
0.16
K/W
0.05
UNITS
°C
4 to 6
200
Nm
g
oz.
INT-A-PAK
Approximate weight
7.1
Case style
I
F
- Instantaneous Forward Current (A)
1000
100
I
R
- Reverse Current (mA)
T
J
= 150 °C
10
T
J
= 150 °C
100
T
J
= 25 °C
10
1
0.1
0.01
T
J
= 25 °C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.001
100
94549_02
200
300
400
500
600
94549_01
V
FM
- Forward Voltage Drop (V)
V
R
- Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 05-May-17
Document Number: 94549
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKDU300/06PbF
www.vishay.com
Vishay Semiconductors
160
140
120
100
DC
80
60
40
20
0
0
100
200
300
400
500
Square
wave (D = 0.50)
Allowable Case Temperature (°C)
94549_03
I
F(AV)
- Average Forward Current (A)
Fig. 3 - Maximum Allowable Case Temperature vs. Average Forward Current
Z
thJC
- Thermal Impedance (°C/W)
1
0.1
0.01
Single
pulse
(thermal resistance)
0.001
0.00001
0.0001
0.001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.01
0.1
1
10
94549_04
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
900
800
1000
V
R
= 400 V
Average Power Loss (W)
700
RMS limit
600
500
400
300
200
100
0
0
100
200
300
400
500
94549_06
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
t
rr
(ns)
100
I
F
= 50 A, T
J
= 25 °C
10
100
1000
94549_05
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Forward Power Loss Characteristics
dI
F
/dt (A/μs)
Fig. 6 - Typical Reverse Recovery Time vs. dI
F
/dt (Per Leg)
Revision: 05-May-17
Document Number: 94549
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKDU300/06PbF
www.vishay.com
Vishay Semiconductors
100
V
R
= 400 V
10 000
V
R
= 400 V
Q
rr
(nC)
I
rr
(A)
1000
10
I
F
= 50 A, T
J
= 25 °C
100
100
94549_07
I
F
= 50 A, T
J
= 25 °C
1
100
94549_08
1000
1000
dI
F
/dt (A/μs)
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Charge vs. dI
F
/dt (Per Leg)
Fig. 8 - Typical Reverse Recovery Current vs. dI
F
/dt (Per Leg)
ORDERING INFORMATION TABLE
Device code
VS-VS KD
1
1
2
3
4
5
6
-
-
-
-
-
-
2
U
3
300
4
06
5
PbF
6
Vishay Semiconductors product
Circuit configuration:
U = Ultrafast diode
Current rating (300 = 300 A)
Voltage rating (06 = 600 V)
PbF = Lead (Pb)-free
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT DRAWING
(1)
~
Two diodes doubler
circuit
+
(2)
-
(3)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95254
Revision: 05-May-17
Document Number: 94549
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
INT-A-PAK DBC
DIMENSIONS
in millimeters (inches)
30 (1.18)
Ø 6.5 (Ø 0.25)
80 (3.15)
17 (0.67)
23 (0.91)
23 (0.91)
35 (1.38)
(0.57)
14.5
66 (2.60)
3 screws M6 x 10
94 (3.70)
5
4
1
2
3
7
6
28 (1.10)
9 (0.33)
37 (1.44)
Document Number: 95254
Revision: 11-Dec-07
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
1
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