PD - 94938A
IRG4BC30FDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST
SOFT RECOVERY DIODE
Fast CoPack IGBT
C
Features
Fast: Optimized for medium operating frequencies
(1-5 kHz in hard switching, >20kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter
distribution and higher efficiency than Generation 3
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-220AB package
Lead-Free
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.59V
@V
GE
= 15V, I
C
= 17A
n-channel
Generation -4 IGBT's offer highest efficiencies available
IGBT's optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBT's. Minimized recovery characteristics require
less/no snubbing
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Benefits
TO-220AB
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
31
17
124
124
12
120
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
-----
------
Typ.
------
------
0.50
-----
2 (0.07)
Max.
1.2
2.5
------
80
------
Units
°C/W
g (oz)
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1
01/26/10
IRG4BC30FDPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Collector-to-Emitter Breakdown Voltage 600
V
(BR)CES
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage ----
V
CE(on)
Collector-to-Emitter Saturation Voltage
----
----
----
Gate Threshold Voltage
3.0
V
GE(th)
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage ----
g
fe
Forward Transconductance
6.1
Zero Gate Voltage Collector Current
----
I
CES
----
V
FM
Diode Forward Voltage Drop
----
----
I
GES
Gate-to-Emitter Leakage Current
----
Typ. Max. Units
----
----
V
0.69 ---- V/°C
1.59 1.8
1.99 ----
V
1.70 ----
---- 6.0
-11 ---- mV/°C
10
----
S
---- 250
µA
---- 2500
1.4 1.7
V
1.3 1.6
---- ±100 n A
Conditions
V
GE
= 0V, I
C
= 250µA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 17A
V
GE
= 15V
I
C
= 31A
See Fig. 2, 5
I
C
= 17A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250µA
V
CE
= V
GE
, I
C
= 250µA
V
CE
= 100V, I
C
= 17A
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
C
= 12A
See Fig. 13
I
C
= 12A, T
J
= 150°C
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Qge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Min.
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
Typ.
51
7.9
19
42
26
230
160
0.63
1.39
2.02
42
27
310
310
3.2
7.5
1100
74
14
42
80
3.5
5.6
80
220
180
120
Max. Units
Conditions
77
I
C
= 17A
12
nC
V
CC
= 400V
See Fig. 8
28
V
GE
= 15V
----
T
J
= 25°C
----
ns
I
C
= 17A, V
CC
= 480V
350
V
GE
= 15V, R
G
= 23Ω
230
Energy losses include "tail" and
----
diode reverse recovery.
----
mJ
See Fig. 9, 10, 11, 18
3.9
----
T
J
= 150°C, See Fig. 9, 10, 11, 18
----
ns
I
C
= 17A, V
CC
= 480V
----
V
GE
= 15V, R
G
= 23Ω
----
Energy losses include "tail" and
----
mJ
diode reverse recovery.
----
nH
Measured 5mm from package
----
V
GE
= 0V
----
pF
V
CC
= 30V
See Fig. 7
----
= 1.0MHz
60
ns
T
J
= 25°C See Fig.
120
T
J
= 125°C
14
I
F
= 12A
6.0
A
T
J
= 25°C See Fig.
10
T
J
= 125°C
15
V
R
= 200V
180
nC
T
J
= 25°C See Fig.
600
T
J
= 125°C
16
di/dt 200A/µs
---- A/µs T
J
= 25°C See Fig.
----
T
J
= 125°C
17
2
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IRG4BC30FDPbF
20
16
Load Current ( A )
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Turn-on losses include
effects of reverse recovery
Power Dissipation = 21W
12
60% of rated
voltage
8
I
4
0
0.1
1
10
A
100
f, Frequency (kHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
1000
1000
I
C
, Collector-to-Emitter Current (A)
100
T
J
= 25°C
I
C
, Collector-to-Emitter Current (A)
100
T
J
= 150°C
T
J
= 150°C
T
J
= 25°C
10
10
1
1
V
GE
= 15V
20µs PULSE WIDTH
A
10
1
5
6
7
8
9
V
CC
= 50V
5µs PULSE WIDTH
A
10
11
12
13
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4BC30FDPbF
40
V
GE
= 15V
2.5
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
= 15V
80µs PULSE WIDTH
I
C
= 34A
Maximum DC Collector Current (A)
30
2.0
20
I
C
= 17A
1.5
10
I
C
= 8.5A
A
-60
-40
-20
0
20
40
60
80
100 120 140 160
0
25
50
75
100
125
150
1.0
T
C
, Case Temperature (°C)
T
J
, Junction Temperature (°C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
P
DM
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t2
Notes:
1. Duty factor D = t
1
/t
2
0.01
0.00001
2. Peak T
J
= P
DM
x Z
thJC
+ T C
0.0001
0.001
0.01
0.1
1
10
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC30FDPbF
2000
V
GE
= 0V
f = 1 MHz
SHORTED
20
1600
Coes = Cce + Cgc
V
GE
, Gate-to-Emitter Voltage (V)
A
Cies = Cge + Cgc + Cce
Cres = Cce
V
CE
= 400V
I
C
= 17A
16
C, Capacitance (pF)
1200
C
ies
12
800
8
C
oes
400
C
res
1
10
100
4
0
0
0
10
20
30
40
50
A
60
V
CE
, Collector-to-Emitter Voltage (V)
Q
g
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
2.20
Total Switchig Losses (mJ)
2.10
Total Switchig Losses (mJ)
V
CC
V
GE
T
J
I
C
= 480V
= 15V
= 25°C
= 17A
10
I
C
= 34A
I
C
= 17A
1
2.00
I
C
= 8.5A
1.90
1.80
0
20
40
60
A
80
0.1
R
G
= 23
Ω
V
GE
= 15V
V
CC
= 480V
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
R
G
, Gate Resistance (
Ω
)
T
J
, Junction Temperature (°C)
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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