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MMBT2222ALT1HTSA1: 产品描述Schottky Diodes u0026 Rectifiers 40V 3A; 产品类别半导体分立半导体; 文件大小530KB，共8页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/

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MMBT2222ALT1HTSA1概述

Schottky Diodes u0026 Rectifiers 40V 3A

MMBT2222ALT1HTSA1规格参数

参数名称	属性值
产品种类 Product Category	Bipolar Transistors - BJT
制造商 Manufacturer	Infineon(英飞凌)
RoHS	Details
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	SOT-23-3
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	40 V
Collector- Base Voltage VCBO	75 V
Emitter- Base Voltage VEBO	6 V
Collector-Emitter Saturation Voltage	1 V
Gain Bandwidth Product fT	300 MHz
最大工作温度 Maximum Operating Temperature	+ 150 C
Continuous Collector Current	600 mA
最小工作温度 Minimum Operating Temperature	- 65 C
系列 Packaging	Reel
系列 Packaging	MouseReel
系列 Packaging	Cut Tape
Pd-功率耗散 Pd - Power Dissipation	330 mW
工厂包装数量 Factory Pack Quantity	3000
单位重量 Unit Weight	0.000282 oz

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SMBT2222A/MMBT2222A

NPN Silicon Switching Transistor

•

Low collector-emitter saturation voltage

•

Complementary type:

SMBT2907A / MMBT2907A (PNP)

•

Pb-free (RoHS compliant) package

•

Qualified according AEC Q101

Type

Marking

SMBT2222A/MMBT2222A s1P

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Total power dissipation-

≤

77 °C

Junction temperature

Storage temperature

Thermal Resistance

Parameter

Pin Configuration

1=B

2=E

Symbol

CEO

CBO

EBO

tot

stg

Symbol

thJS

3=C

Package

SOT23

Unit

Value

600

330

150

-65 ... 150

Value

≤

220

°C

Junction - soldering point

Unit

K/W

For calculation of

thJA please refer to Application Note AN077 (Thermal Resistance Calculation)

2011-08-19

MMBT2222ALT1HTSA1相似产品对比

	MMBT2222ALT1HTSA1	MMBT2222ALT1XT	SMBT-2222A-E6327	SP000011176
描述	Schottky Diodes u0026 Rectifiers 40V 3A	Isolated DC/DC Converters 300 W Isolated DC DC Converter	Bipolar Transistors - BJT AF GP BJT NPN 40V 0.6A	Operational Amplifiers - Op Amps
产品种类 Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
制造商 Manufacturer	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	-
RoHS	Details	Details	Details	-
安装风格 Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT	-
封装 / 箱体 Package / Case	SOT-23-3	SOT-23-3	SOT-23-3	-
Transistor Polarity	NPN	NPN	NPN	-
Configuration	Single	Single	Single	-
Collector- Emitter Voltage VCEO Max	40 V	40 V	40 V	-
Collector- Base Voltage VCBO	75 V	75 V	75 V	-
Emitter- Base Voltage VEBO	6 V	6 V	6 V	-
Collector-Emitter Saturation Voltage	1 V	1 V	1 V	-
Gain Bandwidth Product fT	300 MHz	300 MHz	300 MHz	-
最大工作温度 Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C	-
Continuous Collector Current	600 mA	600 mA	600 mA	-
最小工作温度 Minimum Operating Temperature	- 65 C	- 65 C	- 65 C	-
系列 Packaging	Cut Tape	Reel	Reel	-
Pd-功率耗散 Pd - Power Dissipation	330 mW	330 mW	330 mW	-
工厂包装数量 Factory Pack Quantity	3000	3000	3000	-
单位重量 Unit Weight	0.000282 oz	0.000282 oz	0.000282 oz	-

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