AUTOMOTIVE GRADE
AUIRLR3636
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
60V
5.4m
6.8m
99A
50A
Features
Advanced Process Technology
Ultra Low On-Resistance
Logic Level Gate Drive
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
D
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
G
S
D-Pak
AUIRLR3636
G
Gate
D
Drain
S
Source
Base part number
AUIRLR3636
Package Type
D-Pak
Standard Pack
Form
Quantity
Tube
75
Tape and Reel Left
3000
Orderable Part Number
AUIRLR3636
AUIRLR3636TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
99
70
50
396
143
0.95
± 16
170
See Fig. 14, 15, 22a, 22b
22
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R
JC
R
JA
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mount)
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.05
50
110
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-11-4
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
V
(BR)DSS
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
gfs
R
G(Int)
I
DSS
I
GSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
60
–––
–––
–––
1.0
31
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
AUIRLR3636
Typ. Max. Units
Conditions
––– –––
V V
GS
= 0V, I
D
= 250µA
0.07 ––– V/°C Reference to 25°C, I
D
= 5mA
5.4
6.8
V
GS
= 10V, I
D
= 50A
m
6.6
8.3
V
GS
= 4.5V, I
D
= 50A
–––
2.5
V V
DS
= V
GS
, I
D
= 100µA
––– –––
S V
DS
= 25V, I
D
= 50A
0.6
–––
–––
20
V
DS
= 60V, V
GS
= 0V
µA
––– 250
V
DS
= 60V,V
GS
= 0V,T
J
=125°C
––– 100
V
GS
= 16V
nA
––– -100
V
GS
= -16V
33
11
15
18
45
216
43
69
3779
332
163
437
636
49
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
I
D
= 50A
V = 30V
nC
DS
V
GS
= 4.5V
V
DD
= 39V
I
D
= 50A
ns
R
G
= 7.5
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 50V
pF
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 48V
V
GS
= 0V, V
DS
= 0V to 48V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 50A,V
GS
= 0V
T
J
= 25°C
ns
V
R
= 51V,
T
J
= 125°C
I
F
= 50A
T
J
= 25°C
nC
di/dt = 100A/µs
T
J
= 125°C
A T
J
= 25°C
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Total Gate Charge
Q
g
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Q
sync
t
d(on)
Turn-On Delay Time
Rise Time
t
r
t
d(off)
Turn-Off Delay Time
Fall Time
t
f
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss eff.
(ER) Effective Output Capacitance (Energy Related)
C
oss eff.
(TR) Effective Output Capacitance (Time Related)
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Typ. Max. Units
–––
–––
–––
27
32
31
43
2.1
99
396
1.3
–––
–––
–––
–––
–––
t
on
Notes:
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 50A. Note that current
limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by T
Jmax ,
starting T
J
= 25°C, L = 0.136mH, R
G
= 25, I
AS
= 50A, V
GS
=10V. Part not recommended for use above this value.
I
SD
50A, di/dt
1109A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs;
duty cycle
2%.
C
oss eff
. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss eff
. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R
is
measured at T
J
approximately 90°C.
2
2015-11-4
1000
TOP
VGS
15V
10V
4.5V
4.0V
3.5V
3.3V
3.0V
2.7V
AUIRLR3636
1000
TOP
VGS
15V
10V
4.5V
4.0V
3.5V
3.3V
3.0V
2.7V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.7V
1
2.7V
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
1000
Fig. 2
Typical Output Characteristics
2.5
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
ID = 50A
VGS = 10V
2.0
100
T J = 175°C
T J = 25°C
10
1.5
1
VDS = 25V
60µs
PULSE WIDTH
0.1
1
2
3
4
5
6
7
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig. 4
Normalized On-Resistance vs. Temperature
5.0
4.5
VGS, Gate-to-Source Voltage (V)
ID= 50A
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
VDS = 48V
VDS= 30V
VDS = 12V
C, Capacitance (pF)
10000
C iss
1000
C oss
C rss
100
1
10
VDS , Drain-to-Source Voltage (V)
100
0.0
0
5
10
15
20
25
30
35
40
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
2015-11-4
1000
AUIRLR3636
1000
OPERATION IN THIS AREA LIMITED BY R (on)
DS
100
T J = 175°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100µsec
10
T J = 25°C
10
LIMITED BY PACKAGE
1msec
10msec
1
VGS = 0V
0.1
0.1
0.4
0.7
1
1.3
1.6
1.9
VSD , Source-to-Drain Voltage (V)
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
DC
0.1
100
VDS , Drain-to-Source Voltage (V)
Fig. 7
Typical Source-to-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 8.
Maximum Safe Operating Area
80
Id = 5mA
75
70
65
60
55
50
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Temperature ( °C )
110
100
90
ID, Drain Current (A)
Limited By Package
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
Fig. 9
Maximum Drain Current vs. Case Temperature
0.8
Fig 10.
Drain-to-Source Breakdown Voltage
800
EAS , Single Pulse Avalanche Energy (mJ)
700
600
500
400
300
200
100
0
0.6
Energy (µJ)
ID
TOP
5.69A
10.64A
BOTTOM 50A
0.4
0.2
0.0
0
5 10 15 20 25 30 35 40 45 50 55 60 65
VDS, Drain-to-Source Voltage (V)
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig. 11
Typical C
OSS
Stored Energy
4
Fig 12.
Maximum Avalanche Energy vs. Drain Current
2015-11-4
10
Thermal Response ( Z thJC ) °C/W
AUIRLR3636
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
J
J
1
R
1
R
1
2
R
2
R
2
R
3
R
3
3
R
4
R
4
C
1
2
3
4
4
C
Ri (°C/W)
0.02028
0.29406
0.49179
i
(sec)
0.000011
0.000158
0.001393
0.01
Ci=
iRi
Ci=
iRi
0.24336
0.00725
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
100
0.01
10
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 150°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current Vs. Pulse width
200
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 50A
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as T
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 13, 14).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
T/
Z
thJC
I
av
= 2T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 15.
Maximum Avalanche Energy Vs. Temperature
5
EAR , Avalanche Energy (mJ)
2015-11-4
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