Multiplexer Switch ICs Diff 4:1 Latch Multiplexer/MUX
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Vishay(威世) |
| 零件包装代码 | DIP |
| 包装说明 | DIP, DIP18,.3 |
| 针数 | 18 |
| Reach Compliance Code | unknown |
| Is Samacsys | N |
| 模拟集成电路 - 其他类型 | DIFFERENTIAL MULTIPLEXER |
| JESD-30 代码 | R-PDIP-T18 |
| JESD-609代码 | e0 |
| 信道数量 | 4 |
| 功能数量 | 1 |
| 端子数量 | 18 |
| 最大通态电阻 (Ron) | 200 Ω |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | DIP |
| 封装等效代码 | DIP18,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 电源 | 12/+-15 V |
| 认证状态 | Not Qualified |
| 最大信号电流 | 0.03 A |
| 最大供电电流 (Isup) | 0.1 mA |
| 表面贴装 | NO |
| 最长接通时间 | 300 ns |
| 切换 | BREAK-BEFORE-MAKE |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| Base Number Matches | 1 |
| DG429DJ | DG428DJ-E3 | DG428DJ | DG429DW-E3 | DG429DN-E3 | |
|---|---|---|---|---|---|
| 描述 | Multiplexer Switch ICs Diff 4:1 Latch Multiplexer/MUX | Multiplexer Switch ICs Single 8:1 Latch Multiplexer/MUX | Analog Switch ICs Single 8:1 Latch Multiplexer/MUX | Multiplexer Switch ICs Diff 4:1 Latch Multiplexer/MUX | Tantalum Capacitors - Solid SMD 10V 4.7uF 10% 1210 AEC-Q200 |
| 零件包装代码 | DIP | DIP | DIP | SOIC | QLCC |
| 包装说明 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 | SOP, SOP18,.4 | QCCJ, LDCC20,.4SQ |
| 针数 | 18 | 18 | 18 | 18 | 20 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| 模拟集成电路 - 其他类型 | DIFFERENTIAL MULTIPLEXER | SINGLE-ENDED MULTIPLEXER | SINGLE-ENDED MULTIPLEXER | DIFFERENTIAL MULTIPLEXER | DIFFERENTIAL MULTIPLEXER |
| JESD-30 代码 | R-PDIP-T18 | R-PDIP-T18 | R-PDIP-T18 | R-PDSO-G18 | S-PQCC-J20 |
| JESD-609代码 | e0 | e3 | e0 | e3 | e3 |
| 信道数量 | 4 | 8 | 8 | 4 | 4 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 18 | 18 | 18 | 18 | 20 |
| 最大通态电阻 (Ron) | 200 Ω | 100 Ω | 200 Ω | 100 Ω | 100 Ω |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
| 最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | DIP | DIP | DIP | SOP | QCCJ |
| 封装等效代码 | DIP18,.3 | DIP18,.3 | DIP18,.3 | SOP18,.4 | LDCC20,.4SQ |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | SQUARE |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | SMALL OUTLINE | CHIP CARRIER |
| 电源 | 12/+-15 V | 12/+-15 V | 12/+-15 V | 12/+-15 V | 12/+-15 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大信号电流 | 0.03 A | 0.03 A | 0.03 A | 0.03 A | 0.03 A |
| 最大供电电流 (Isup) | 0.1 mA | 0.1 mA | 0.1 mA | 0.1 mA | 0.1 mA |
| 表面贴装 | NO | NO | NO | YES | YES |
| 最长接通时间 | 300 ns | 225 ns | 300 ns | 225 ns | 225 ns |
| 切换 | BREAK-BEFORE-MAKE | BREAK-BEFORE-MAKE | BREAK-BEFORE-MAKE | BREAK-BEFORE-MAKE | BREAK-BEFORE-MAKE |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Matte Tin (Sn) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | GULL WING | J BEND |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 1.27 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | QUAD |
| 是否无铅 | 含铅 | 不含铅 | 含铅 | - | 不含铅 |
| 厂商名称 | Vishay(威世) | Vishay(威世) | Vishay(威世) | - | Vishay(威世) |
| 长度 | - | 37.4 mm | - | 11.85 mm | 8.966 mm |
| 湿度敏感等级 | - | 1 | - | 1 | 1 |
| 标称负供电电压 (Vsup) | - | -15 V | - | -15 V | -15 V |
| 标称断态隔离度 | - | 75 dB | - | 75 dB | 75 dB |
| 通态电阻匹配规范 | - | 5 Ω | - | 5 Ω | 5 Ω |
| 峰值回流温度（摄氏度） | - | NOT SPECIFIED | - | NOT SPECIFIED | 260 |
| 座面最大高度 | - | 5.08 mm | - | 2.9 mm | 4.57 mm |
| 标称供电电压 (Vsup) | - | 15 V | - | 15 V | 15 V |
| 最长断开时间 | - | 300 ns | - | 300 ns | 300 ns |
| 处于峰值回流温度下的最长时间 | - | NOT SPECIFIED | - | NOT SPECIFIED | 40 |
| 宽度 | - | 15.24 mm | - | 7.62 mm | 8.966 mm |
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