New Product
Si4446DY
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
FEATURES
I
D
(A)
d
5.2
4.9
Q
g
(Typ.)
8
PRODUCT SUMMARY
V
DS
(V)
40
R
DS(on)
(Ω)
0.040 at V
GS
= 10 V
0.045 at V
GS
= 4.5 V
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
• 100 % R
g
UIS Tested
APPLICATIONS
• CCFL Inverter
SO-8
S
S
S
G
1
2
3
4
Top View
S
Ordering Information:
Si4446DY-T1-E3 (Lead (Pb)-free)
Si4446DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
8
7
6
5
D
D
D
D
G
D
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
2.0
1.3
- 55 to 150
1.7
13
8.5
1.1
0.7
mJ
W
°C
5.2
4.2
30
0.9
10 s
40
± 12
3.9
3.1
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
52
90
32
Maximum
62.5
110
40
Unit
°C/W
Document Number: 73661
S09-0322-Rev. B, 02-Mar-09
www.vishay.com
1
New Product
Si4446DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate-Source Threshold Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward
Voltage
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
V
GS(th)
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
F
= 1.7 A, dI/dt = 100 A/µs
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
f = 1 MHz
V
DS
= 20 V, V
GS
= 4.5 V, I
D
= 5.2 A
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
V
DS
= V
GS
, I
D
= 250 µA
I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5.2 A
V
GS
= 4.5 V, I
D
= 4.9 A
V
DS
= 15 V, I
D
= 5.2 A
I
S
= 1.7 A, V
GS
= 0 V
20
0.033
0.037
18
0.75
700
76
45
8
1.5
2.4
1.9
7
11
27
8
25
17
2.9
11
17
40
13
40
26
nC
ns
Ω
12
nC
pF
1.2
0.040
0.045
0.6
40
- 3.8
± 100
1
10
1.6
V
mV/°C
nA
µA
A
Ω
S
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73661
S09-0322-Rev. B, 02-Mar-09
New Product
Si4446DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
V
GS
= 10
V
thru 3
V
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
16
20
12
12
8
2
V
4
8
T
C
= 125
4
25 °C
- 55 °C
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.050
1200
Transfer Characteristics
0.045
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
1000
0.040
V
GS
= 4.5
V
0.035
V
GS
= 10
V
0.030
800
C
iss
600
400
C
oss
C
rss
0.025
200
0.020
0
4
8
12
16
20
0
0
5
10
15
20
25
30
35
40
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
6
I
D
= 5.2 A
V
GS
- Gate-to-Source
Voltage
(V)
5
V
DS
= 10
V
4
R
DS(on)
- On-Resistance
(Normalized)
1.6
1.8
V
GS
= 10
V
I
D
= 5.2 A
Capacitance
1.4
3
V
DS
= 20
V
2
1.2
1.0
1
0.8
0
0
1
2
3
4
5
6
7
8
9
10
11
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73661
S09-0322-Rev. B, 02-Mar-09
www.vishay.com
3
New Product
Si4446DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
0.20
I
D
= 5.2 A
R
DS(on)
- On-Resistance (Ω)
10
I
S
- Source Current (A)
T
J
= 150 °C
0.16
0.12
0.08
T
A
= 125 °C
T
J
= 25 °C
0.04
T
A
= 25 °C
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
GS
- Gate-to-Source
Voltage
(V)
V
SD
- Source-to-Drain
Voltage
(V)
Source-Drain Diode Forward Voltage
0.4
100
On-Resistance vs. Gate-to-Source Voltage
0.2
V
GS(th)
Variance
(V)
I
D
= 250
µA
- 0.0
Power (W)
80
60
- 0.2
40
- 0.4
20
- 0.6
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Single Pulse Power, Junction-to-Ambient
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
1
1 ms
10 ms
100 ms
T
C
= 25 °C
Single Pulse
1s
10 s
DC
0.1
0.01
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area
www.vishay.com
4
Document Number: 73661
S09-0322-Rev. B, 02-Mar-09
New Product
Si4446DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Normalized
Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 90 C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
100
600
Square
Wave
Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized
Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square
Wave
Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?73661.
Document Number: 73661
S09-0322-Rev. B, 02-Mar-09
www.vishay.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
