PTVA120251EA
Thermally-Enhanced High Power RF LDMOS FET
25 W, 50 V, 500 – 1400 MHz
Description
The PTVA120251EA LDMOS FET is designed for use in power ampli-
fier applications in the 500 MHz to 1400 MHz frequency band. Features
include high gain and a thermally-enhanced package with bolt-down
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTVA120251EA
Package H-36265-2
V
DD
= 50 V, I
DQ
= 20 mA, T
CASE
= 25°C
300 µs pulse width, 12% duty cycle
60
55
50
45
40
35
30
1200 MHz
1300 MHz
1400 MHz
1200 MHz
1300 Mhz
1400 MHz
a120251ea-v2-gr1a```
Power Sweep, Pulsed RF
Features
•
Unmatched input and output
•
High gain and efficiency
70
60
•
Integrated ESD protection
•
ESD HBM Class 2, per ANSI/ESDA/JEDEC JS-001
Drain Efficiency (%)
Efficiency
Output Power (dBm)
•
Low thermal resistance
•
Excellent ruggedness
•
Pb-free and RoHS-compliant
•
Capable of withstanding a 10:1 load mismatch
(all phase angles) at P
OUT
= 25 W, under CW
conditions
Output Power
50
40
30
20
10
18
22
26
30
34
Input Power (dBm)
RF Characteristics
Typical RF Performance
(not subject to production test, verified by design/characterization in Infineon test fixture)
V
DD
= 50 V, I
DQ
= 0.02 A, Input signal (t
r
= 5 ns, t
f
= 6.5 ns), 300 µs pulse width, 12% duty cycle, class AB test
P
1dB
Mode of operation
ƒ
(MHz)
Pulsed RF
Pulsed RF
Pulsed RF
1200
1300
1400
IRL
(dB)
12
11
14
Gain
(dB)
16.4
16.0
15.8
Eff
(%)
52
56
53
P
OUT
(W)
31
32
34
Gain
(dB)
14.4
14.0
13.8
P
3dB
Eff
(%)
56
59
56
P
OUT
(W)
41
40
38
P
droop(pulse)
dB @ 30 W
0.27
0.20
0.24
t
r
(ns)
6
6
6
t
f
(ns)
8
8
8
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 14
Rev. 04.3, 2017-02-07
PTVA120251EA
RF Characteristics
Pulsed RF Performance
(tested in Infineon test fixture)
V
DD
= 50 V, I
DQ
= 0.02 A, P
OUT
= 25 W, ƒ
1
= 1200 MHz, ƒ
2
= 1300 MHz, ƒ
3
= 1400 M Hz, 300 µs pulse width, 10% duty cycle
Characteristic
Gain
Drain Efficiency
Return Loss
Symbol
G
ps
Min
17
47
—
Typ
18
54
–13
Max
—
—
–9
Unit
dB
%
dB
h
D
IRL
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 50 V, V
GS
= 0 V
V
DS
= 105 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
105
—
—
—
3
—
Typ
—
—
—
1.4
3.35
—
Max
—
1.0
10.0
—
4
1.0
Unit
V
µA
µA
W
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 50 V, I
DQ
= 150 mA
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, V
DD
= 50 V, 25 W CW)
Symbol
V
DSS
V
GS
V
DD
T
J
T
STG
R
q
JC
Value
105
–6 to +12
0 to +55
225
–65 to +150
3.7
Unit
V
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTVA120251EA V2 R0
PTVA120251EA V2 R250
Order Code
PTVA120251EAV2R0XTMA1
PTVA120251EAV2R250XTMA1
Package and Description
H-36265-2, bolt-down
H-36265-2, bolt-down
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 14
Rev. 04.3, 2017-02-07
PTVA120251EA
Typical RF Performance
(data taken in production test fixture)
Power Sweep, Pulsed RF
Power Sweep, Pulsed RF
V
DD
= 50 V, I
DQ
= 20 mA, T
CASE
= 25°C
300 µs pulse width, 12% duty cycle
19
18
17
16
15
14
13
1200 MHz
1300 MHz
1400 MHz
a120251ea-v2-gr1b
V
DD
= 50 V, I
DQ
= 20 mA, P
OUT
= 25 W
300 µs pulse width, 12% duty cycle
19
70
65
18
Gain (dB)
Efficiency
Gain
60
55
50
45
17
18
22
26
30
34
16
1150
a120251ea-v2-gr1c
1250
1350
40
1450
Input Power (dBm)
Frequency (MHz)
V
DD
= 50 V, I
DQ
= 20 mA at P1dB
300 µs pulse width, 12% duty cycle
0.32
0.28
-10
Power Sweep, Pulsed RF
Pulsed CW Performance
at Selected V
DD
I
DQ
= 20 mA, ƒ = 1300 MHz
300 µs, 12% duty cycle
30 V
35 V
40 V
45 V
50 V
19
80
Input Return Loss (dB)
Power Droop (dB)
Input Return Loss
-12
-14
-16
-18
-20
Gain (dB)
0.24
0.20
0.16
0.12
0.08
1150
a120251ea-v2-gr1d
15
40
Power Droop
13
Gain
Efficiency
20
1250
1350
-22
1450
11
a120251ea-v2-gr6
28
32
36
40
44
48
0
Frequency (MHz)
Output Power (dBm)
Data Sheet
3 of 14
Rev. 04.3, 2017-02-07
Efficiency (%)
17
60
Drain Efficiency (%)
Gain (dB)
PTVA120251EA
Typical RF Performance
(cont.)
Power Sweep, Pulsed RF
Power Sweep, Pulsed RF
V
DD
= 50 V, I
DQ
= 20 mA
2 ms pulse width, 10% duty cycle
60
55
70
19
18
V
DD
= 50 V, I
DQ
= 20 mA
2 ms pulse width, 10% duty cycle
Efficiency
Output Power
1200 MHz
1300 MHz
1400 MHz
1200 MHz
1300 Mhz
1400 MHz
a120251ea-v2-gr2a
60
50
40
30
20
10
P
OUT
(dBm)
45
40
35
30
Gain (dB)
50
Drain Efficiency (%)
Gain
17
16
15
14
13
1200 MHz
1300 MHz
1400 MHz
a120251ea-v2-gr2b
18
22
26
30
34
18
20
22
24
26
28
30
32
34
Input Power (dBm)
Input Power (dBm)
V
DD
= 50 V, I
DQ
= 20 mA, P
OUT
= 25 W
2 ms pulse width, 10% duty cycle
19
70
0.26
0.24
Power Sweep, Pulsed RF
V
DD
= 50 V, I
DQ
= 20 mA at P1dB
2 ms pulse width, 10% duty cycle
-10
Power Sweep, Pulsed RF
Drain Efficiency (%)
Power Droop (dB)
0.22
0.20
0.18
0.16
0.14
0.12
Gain (dB)
18
60
Power Droop
-12
Efficiency
17
-14
Gain
50
-16
Input Return Loss
a120251ea-v2-gr2d
16
1150
a120251ea-v2-gr2c
1200
1250
1300
1350
1400
40
1450
0.10
1150
1200
1250
1300
1350
1400
-18
1450
Frequency (MHz)
Frequency (MHz)
Data Sheet
4 of 14
Rev. 04.3, 2017-02-07
IRL (dB)
PTVA120251EA
Typical RF Performance
(cont.)
Power Sweep, Pulsed RF
V
DD
= 50 V, I
DQ
= 20 mA
128 µs pulse width, 10% duty cycle
60
70
V
DD
= 50 V, I
DQ
= 20 mA
128 µs pulse width, 10% duty cycle
19
18
Power Sweep, Pulsed RF
Efficiency
Output Power (dBm)
55
50
45
40
35
30
1200 MHz
1300 MHz
1400 MHz
1200 MHz
1300 Mhz
1400 MHz
a120251ea-gr3a
60
Drain Efficiency (%)
Output Power
Gain (dB)
50
40
30
20
10
17
16
15
14
13
Gain
1200 MHz
1300 MHz
1400 MHz
a120251ea-gr3b
18
22
26
30
34
18
20
22
24
26
28
30
32
34
Power In (dBm)
Power In (dBm)
V
DD
= 50 V, I
DQ
= 20 mA, P
OUT
= 25 W
128 µs pulse width, 10% duty cycle
19
70
0.18
0.16
Power Sweep, Pulsed RF
V
DD
= 50 V, I
DQ
= 20 mA at P1dB
128 µs pulse width, 10% duty cycle
-10
Power Sweep, Pulsed RF
Power Droop
-12
Drain Efficiency (%)
Gain (dB)
18
60
Power Droop (dB)
0.14
0.12
0.10
0.08
0.06
0.04
Efficiency
17
50
-14
Gain
16
1150
40
1450
Input Return Loss
-16
a120251ea-gr3c
1250
1350
0.02
1150
a120251ea-gr3d
1250
1350
-18
1450
Frequency (MHz)
Frequency (MHz)
Data Sheet
5 of 14
Rev. 04.3, 2017-02-07
IRL (dB)
PCB设计
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