MOSFET Avalanche
参数名称 | 属性值 |
产品种类 Product Category | MOSFET |
制造商 Manufacturer | Diodes |
RoHS | Details |
技术 Technology | Si |
安装风格 Mounting Style | Through Hole |
封装 / 箱体 Package / Case | TO-92-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 1.1 A |
Rds On - Drain-Source Resistance | 450 mOhms |
Vgs - Gate-Source Voltage | 20 V |
最小工作温度 Minimum Operating Temperature | - 55 C |
最大工作温度 Maximum Operating Temperature | + 150 C |
Configuration | Single |
Channel Mode | Enhancement |
系列 Packaging | Bulk |
Fall Time | 25 ns |
Pd-功率耗散 Pd - Power Dissipation | 850 mW |
产品 Product | MOSFET Small Signal |
Rise Time | 25 ns |
工厂包装数量 Factory Pack Quantity | 4000 |
Transistor Type | 1 N-Channel |
类型 Type | FET |
Typical Turn-Off Delay Time | 30 ns |
Typical Turn-On Delay Time | 8 ns |
单位重量 Unit Weight | 0.016000 oz |
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