MWI 225-12 E9
IGBT Modules
Sixpack
NPT
3
IGBT
2
15
28
16
17
11/12
29
13
14
1
18
19
3
20
21
22
9/10
23
24
5
4
25
26
27
7/8
6
I
C80
= 250 A
V
CES
= 1200 V
V
CE(sat) typ.
= 2.1 V
See outline drawing for pin arrangement
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
RBSOA
t
SC
(SCSOA)
P
tot
Symbol
T
C
= 25°C
T
C
= 80°C
R
G
= 5
Ω;
T
VJ
= 125°C
Clamped inductive load; L = 100 µH
V
CE
= 900 V; V
GE
=
±
15 V; R
G
= 5
Ω
T
VJ
= 125°C; non-repetitive; V
CEmax
< V
CES
T
C
= 25°C
Conditions
Conditions
T
VJ
= 25°C to 125°C
Maximum Ratings
1200
±
20
355
250
V
Features
• NPT
3
IGBT technology
• low saturation voltage
• low switching losses
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient for
easy parallelling
• MOS input, voltage controlled
• ultra fast free wheeling diodes
• solderable pins for PCB mounting
• package with copper base plate
Advantages
• space savings
• reduced protection circuits
• package designed for wave soldering
Typical Applications
• AC motor control
• AC servo and robot drives
• power supplies
-o
I
CM
= 500
V
CEK
< V
CES
10
1.4
min.
typ.
2.1
2.4
4.5
1
180
100
650
120
13
21
14
1.5
0.09
max.
2.5
2.9
6.5
1
8
400
e
(T
VJ
= 25°C, unless otherwise specified)
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
I
C
= 225 A; V
GE
= 15 V
I
C
= 8 mA; V
GE
= V
CE
a
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
s
Characteristic Values
h
V
CE
= 0 V; V
GE
=
±
20 V
p
V
CE
= V
CES
; V
GE
= 0 V
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 200 A
V
GE
= ±15 V; R
G
= 3.6
Ω
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= 15 V; I
C
= 300 A
IXYS reserves the right to change limits, test conditions and dimensions.
u
A
A
A
µs
kW
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
µC
K/W
t
V
20100421a
© 2010 IXYS All rights reserved
1-5
MWI 225-12 E9
Diodes
Symbol
I
F80
I
FRM
I
2
t
Symbol
Conditions
T
C
= 80°C
t
p
= 1 ms
T
VJ
= 125°C; t = 10 ms; V
R
= 0 V
Conditions
Maximum Ratings
205
400
10000
A
A
A
2
s
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ.
max.
2.2
160
0.165
V
A
K/W
V
F
I
RM
R
thJC
I
F
= 225 A; V
GE
= 0 V; T
VJ
= 25°C
I
F
= 225 A; di
F
/dt = 1800 A/µs;
T
VJ
= 125°C; V
R
= 800 V
Temperature Sensor NTC
min.
R
25
B
25/50
Module
Symbol
T
VJ
T
JM
T
stg
V
ISO
M
d
Conditions
operating
T = 25°C
4.75
typ.
5.0
3375
max.
5.25
-o
e
s
min.
12.7
10
0.01
900
typ.
0.55
-40...+125
+150
-40...+125
3400
3-6
3-6
Maximum Ratings
°C
°C
°C
V~
Nm
Nm
I
ISOL
< 1 mA; 50/60 Hz
Mounting torque (M5)
Terminal connection torque (M6)
Conditions
Symbol
R
therm-chip
*
)
d
S
d
A
R
thCH
Weight
a
h
Characteristic Values
max.
mΩ
mm
mm
K/W
g
Resistance terminal to chip
with heatsink compound
*
)
V = V
CEsat
+ 2x R
therm-chip
·I
C
resp. V = V
F
+ 2x R·I
F
IXYS reserves the right to change limits, test conditions and dimensions.
p
Creepage distance on surface
Strike distance in air
u
t
kΩ
K
20100421a
Symbol
Conditions
Characteristic Values
© 2010 IXYS All rights reserved
2-5
MWI 225-12 E9
Dimensions in mm (1 mm = 0.0394")
p
IXYS reserves the right to change limits, test conditions and dimensions.
h
a
=
tolerance for all dimensions:
s
e
-o
u
t
20100421a
© 2010 IXYS All rights reserved
3-5
MWI 225-12 E9
400
400
300
300
I
F
200
I
CE
[A]
200
T
J
= 125°C
T
J
= 25°C
[A]
100
T
J
= 125°C
T
J
= 25°C
0
0
1
2
3
100
0
4
5
6
7
8
9
10
11
V
F
[V]
V
GE
[V]
Fig. 1 Typ. forward characteristics
of free wheeling diode
Fig. 2 Typ. transfer characteristics
400
T
J
= 25°C
300
400
I
C
[A]
200
9V
-o
I
C
200
11 V
13 V
15 V
17 V
19 V
u
0
2
T
J
= 125°C
t
11 V
13 V
15 V
17 V
19 V
9V
V
CE
[V]
4
6
300
[A]
100
e
s
V
CE
[V]
100
0
Fig. 3 Typ. output characteristics
a
0
2
4
6
0
Fig. 4 Typ. output characteristics
h
p
20
15
10
200
T
J
= 125°C
V
R
= 600 V
I
F
= 200 A
1200
150
900
V
GE
[V]
5
0
-5
-10
-15
-20
0
1
2
3
V
CE
= 600 V
I
C
= 65 A
I
RM
[A]
t
rr
100
600
[ns]
50
I
RM
300
t
rr
0
0
1000
2000
0
3000
Q
G
[µC]
Fig. 5 Typ. turn on gate charge
IXYS reserves the right to change limits, test conditions and dimensions.
-di/dt
[A/µs]
Fig. 6 Typ. turn off characteristics
of free wheeling diode
20100421a
© 2010 IXYS All rights reserved
4-5
MWI 225-12 E9
80
t
d(on)
240
50
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 3.6
Ω
T
VJ
= 125°C
t
d(off)
1000
60
180
V
CE
= 600 V
V
GE
= ±15 V
40
800
E
off
t
30
E
[mJ]
600
40
R
G
= 3.6
Ω
T
VJ
= 125°C
t
r
120
[mJ]
20
t
[ns]
E
on
E
rec(off)
400
[ns]
20
60
10
E
off
100
200
300
t
f
200
0
0
100
200
300
0
400
0
0
400
I
C
[A]
I
C
[A]
Fig. 7 Typ. turn on energy and switching times
versus collector current
Fig. 8 Typ. turn off energy and switching times
versus collector current
120
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 200 A
T
VJ
= 125°C
t
d(on)
400
60
50
t
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 200 A
T
VJ
= 125°C
t
d(off)
3000
2500
2000
1500
1000
500
90
300
t
r
E
60
-o
t
E
off
40
30
20
10
u
200
t
[ns]
[mJ]
30
E
on
0
E
rec(off)
0
10
20
30
[ns]
100
[mJ]
E
off
s
e
t
f
0
0
10
20
30
0
40
R
G
[Ω]
a
0
40
R
G
[Ω]
h
Fig. 9 Typ. turn on energy and switching times
versus gate resistor
12
30
0.20
Fig. 10 Typ. turn off energy and switching times
versus gate resistor
10
V
R
= 600 V
I
F
= ±15 V
T
VJ
= 125°C
p
Z
thJC
Qrr
diode
24
0.16
[K/W]
Q
rr
0.12
single pulse
IGBT
0.08
E
rec(off)
[mJ]
8
18
[nC]
6
Erec(off)
12
0.04
4
500
1000
1500
2000
2500
6
3000
0.00
1
10
100
1000
10000
di/dt
[A/µs]
Fig. 11 Typ. turn off energy and recovered charge
of free wheeling diode
IXYS reserves the right to change limits, test conditions and dimensions.
t
[ms]
Fig. 12 Typ. transient thermal impedance
20100421a
© 2010 IXYS All rights reserved
5-5
嵌入式系统
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