PD - 93944D
AUTOMOTIVE MOSFET
Typical Applications
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Anti-lock Braking Systems (ABS)
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Electronic Fuel Injection
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Power Doors, Windows & Seats
IRF7103Q
HEXFET
®
Power MOSFET
V
DSS
50V
R
DS(on)
max (mW)
130@V
GS
= 10V
200@V
GS
= 4.5V
I
D
3.0A
1.5A
Benefits
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l
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Advanced Process Technology
Dual N-Channel MOSFET
Ultra Low On-Resistance
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Automotive [Q101] Qualified
S1
G1
S2
G2
1
2
3
4
8
7
6
5
D1
D1
D2
D2
Description
Specifically designed for Automotive applications, these
HEXFET
®
Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal
in a variety of power applications. This dual, surface mount
SO-8 can dramatically reduce board space and is also available
Top View
SO-8
in Tape & Reel.
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 70°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
3.0
2.5
25
2.4
16
± 20
22
See Fig.16c, 16d, 19, 20
12
-55 to + 175
Units
A
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
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1
03/25/09
IRF7103Q
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
50
–––
–––
–––
1.0
3.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.057
–––
–––
–––
–––
–––
–––
–––
–––
10
1.2
2.8
5.1
1.7
15
2.3
255
69
29
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
130
V
GS
= 10V, I
D
= 3.0A
mΩ
200
V
GS
= 4.5V, I
D
= 1.5A
3.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 15V, I
D
= 3.0A
2.0
V
DS
= 40V, V
GS
= 0V
µA
25
V
DS
= 40V, V
GS
= 0V, T
J
= 55°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
15
I
D
= 2.0A
–––
nC V
DS
= 40V
–––
V
GS
= 10V
–––
V
DD
= 25V
–––
I
D
= 1.0A
ns
–––
R
G
= 6.0Ω
–––
R
D
= 25Ω
–––
V
GS
= 0V
–––
pF
V
DS
= 25V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
35
45
3.0
A
12
1.2
53
67
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 1.5A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.5A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
Surface mounted on 1 in square Cu board
Starting T
J
= 25°C, L = 4.9mH
R
G
= 25Ω, I
AS
= 3.0A. (See Figure 12).
I
SD
≤
2.0A, di/dt
≤
155A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Limited by T
Jmax
, see Fig.16c, 16d, 19, 20 for typical repetitive
avalanche performance.
2
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IRF7103Q
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
ID, Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
4.5V
4.5V
10
1
20µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
20µs PULSE WIDTH
Tj = 175°C
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100.00
2.5
ID, Drain-to-Source Current
(Α
)
T J = 175°C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 3.0A
2.0
10.00
T J = 25°C
1.5
1.0
0.5
1.00
3.0
6.0
VDS = 25V
20µs PULSE WIDTH
9.0
12.0
15.0
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7103Q
10000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd , C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
V
GS
, Gate-to-Source Voltage (V)
12
I
D
=
2.0A
V
DS
= 40V
V
DS
= 25V
V
DS
= 10V
9
C, Capacitance(pF)
1000
Ciss
100
6
Coss
Crss
3
10
1
10
100
0
0
3
6
9
12
VDS , Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
10
100
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
T
J
= 175
°
C
ID, Drain-to-Source Current (A)
10
1
1
T
J
= 25
°
C
100µsec
1msec
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
0
1
10
10msec
0.1
0.4
V
GS
= 0 V
0.6
0.8
1.0
1.2
0.01
V
SD
,Source-to-Drain Voltage (V)
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7103Q
3.0
V
DS
2.4
R
D
V
GS
R
G
I
D
, Drain Current (A)
D.U.T.
+
1.8
-
V
DD
V
GS
1.2
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
0.6
Fig 10a.
Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
0.0
T
C
, Case Temperature ( °C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
100
Thermal Response ( Z thJA ) °C/W
D = 0.50
10
0.20
0.10
0.05
0.02
0.01
1
0.1
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
0.001
0.01
0.1
1
10
100
0.01
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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