Si3454CDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
Limit
30
± 20
4.2
3.3
3.8
b, c
3.1
b, c
20
1.25
1.04
b, c
1.5
0.9
1.25
b, c
0.8
b, c
- 55 to 150
Unit
V
Continuous Drain Current (T
J
= 150 °C)
I
D
A
Pulsed Drain Current
Continuous Source-Drain Diode Current
I
DM
I
S
A
Maximum Power Dissipation
P
D
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
b, d
t
5
s
Steady State
Symbol
R
thJA
R
thJF
Typical
80
70
Maximum
100
85
Unit
°C/W
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 145 °C/W.
Document Number: 68607
S10-1532-Rev. C, 19-Jul-10
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1
Si3454CDV
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 3.1 A, dI/dt = 100 A/µs
I
S
= 3.1 A
0.8
11.5
5
7.6
3.9
T
C
= 25 °C
1.25
20
1.2
17.8
10
A
V
ns
nC
ns
b
Symbol
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
=
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 3.8 A
V
GS
= 4.5 V, I
D
= 3.1 A
V
DS
= 15 V, I
D
= 3.8 A
Min.
30
Typ.
Max.
Unit
V
27.5
- 5.5
1
3
± 100
1
10
20
0.041
0.066
8
305
0.050
0.079
mV/°C
V
nA
µA
A
S
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 3.8 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 3.8 A
f = 1 MHz
V
DD
= 15 V, R
L
= 4.8
I
D
3.1 A, V
GEN
= 10 V, R
g
= 1
0.44
52
27
5.3
2.6
1.2
0.8
2.2
4
8
11
7
15
4.4
8
16
18
14
20
18
16
18
10.6
5.2
pF
nC
ns
V
DD
= 15 V, R
L
= 4.8
I
D
3.1 A, V
GEN
= 4.5 V, R
g
= 1
12
8
9
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68607
S10-1532-Rev. C, 19-Jul-10
Si3454CDV
Vishay Siliconix
TYPICAL CHARACTERISTICS
20
V
GS
= 10
V
thru 5
V
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
2.4
T
A
= 25 °C, unless otherwise noted
3.0
T
C
= - 55 °C
12
V
GS
= 4
V
8
1.8
T
C
= 25 °C
1.2
4
V
GS
= 3
V
0
0.0
0.6
T
C
= 125 °C
0.0
0.6
1.2
1.8
2.4
3.0
0
1
2
3
4
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.15
400
Transfer Characteristics Curves vs. Temp.
0.12
R
DS(on)
- On-Resistance (Ω)
300
0.09
V
GS
= 4.5
V
C - Capacitance (pF)
C
iss
200
0.06
V
GS
= 10
V
0.03
100
C
oss
C
rss
0
6
12
18
24
30
0.00
0
4
8
12
16
20
0
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
10
I
D
= 3.8 A
V
GS
- Gate-to-Source
Voltage
(V)
8
R
DS(on)
- On-Resistance
(Normalized)
V
DS
= 15
V
6
V
DS
= 24
V
4
1.5
1.8
Capacitance
V
GS
= 10
V,
I
D
= 3.8 A
1.2
V
GS
= 4.5
V,
I
D
= 3.1 A
0.9
2
0
0
1
2
3
4
5
6
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Q
g
- Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 68607
S10-1532-Rev. C, 19-Jul-10
www.vishay.com
3
Si3454CDV
Vishay Siliconix
TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
100
0.10
I
D
= 3.8 A
R
DS(on)
- On-Resistance (Ω)
0.08
T
J
= 125 °C
0.06
T
J
= 25 °C
0.04
I
S
- Source Current (A)
10
1
T
J
= 150 °C
T
J
= 25 °C
0.02
0.1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
4
8
12
16
20
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
2.4
10
On-Resistance vs. Gate-to-Source Voltage
I
D
= 250
µA
2.1
Power (W)
- 25
0
25
50
75
100
125
150
V
GS(th)
(V)
8
6
1.8
4
1.5
2
1.2
- 50
0
0.01
0.1
1
10
Time (s)
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power
100
µs
1 ms
1
10 ms
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
1
BVDSS
Limited
10
100 ms
1s
10 s
DC
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 68607
S10-1532-Rev. C, 19-Jul-10
Si3454CDV
Vishay Siliconix
TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
5
4
I
D
- Drain Current (A)
3
2
1
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
1.2
1.8
1.5
0.9
1.2
Power (W)
Power (W)
0.6
0.9
0.6
0.3
0.3
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
Power Derating, Junction-to-Case
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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