MMBF4117 / MMBF4118 / MMBF4119 — N-Channel Switch
February 2015
MMBF4117 / MMBF4118 / MMBF4119
N-Channel Switch
Description
G
This device is designed for low current DC and audio
applications. These devices provide excellent perfor-
mance as input stages for sub-picoamp instrumenta-
tion or any high impedance signal sources. Sourced
from process 53.
S
SOT-23
D
Note: Source & Drain
are interchangeable
Ordering Information
Part Number
MMBF4117
MMBF4118
MMBF4119
Top Mark
61A
61C
61E
Package
SOT-23 3L
SOT-23 3L
SOT-23 3L
Packing Method
Tape and Reel
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
DG
V
GS
I
GF
T
J
, T
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Parameter
Value
40
-40
50
-55 to +150
Unit
V
V
mA
°C
Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 1997 Fairchild Semiconductor Corporation
MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4
www.fairchildsemi.com
MMBF4117 / MMBF4118 / MMBF4119 — N-Channel Switch
Thermal Characteristics
(3)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
R
θJA
Total Device Dissipation
Derate Above 25°C
Parameter
Max.
225
1.8
556
Unit
mW
mW/°C
°C/W
Thermal Resistance, Junction-to-Ambient
Note:
3. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
Off Characteristics
Parameter
Conditions
Min.
-40
Max.
Unit
V
V
(BR)GSS
Gate-Source Breakdown Voltage I
G
= -1.0
μA,
V
DS
= 0
I
GSS
Gate Reverse Current
V
GS
= -20 V, V
DS
= 0
V
GS
= -20 V, V
DS
= 0, T
A
= 150°C
MMBF4117
V
GS(off)
Gate-Source Cut-Off Voltage
V
DS
= -10 V, I
D
= 1.0 nA MMBF4118
MMBF4119
On Characteristics
MMBF4117
I
DSS
Zero-Gate Voltage Drain
Current
(4)
V
DS
= 10 V, V
GS
= 0
MMBF4118
MMBF4119
Small Signal Characteristics
MMBF4117
g
fs
Common-Source Forward
Transconductance
V
DS
= 10 V, V
GS
= 0,
f = 1.0 kHz
MMBF4118
MMBF4119
MMBF4117
g
oss
Common-Source Output
Conductance
V
DS
= 10 V, V
GS
= 0,
f = 1.0 kHz
MMBF4118
MMBF4119
MMBF4117
R
e(yfs)
C
iss
C
rss
Common-Source Forward
Transconductance
Input Capacitance
Reverse Transfer Capacitance
V
DS
= 10 V, V
GS
= 0,
f = 30 MHz
MMBF4118
MMBF4119
V
DS
= 10 V, V
GS
= 0, f = 1.0 kHz
V
DS
= 10 V, V
GS
= 0, f = 1.0 MHz
-10
-25
-0.6
-1.0
-2.0
30
80
200
70
80
100
-1.8
-3.0
-6.0
90
240
600
210
250
330
3.0
5.0
10.0
60
70
90
3.0
1.5
pA
nA
V
μA
μmhos
μmhos
μmhos
pF
pF
Note:
4. Pulse test: pulse width
≤
300
μs,
duty cycle
≤
1.0%
© 1997 Fairchild Semiconductor Corporation
MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4
www.fairchildsemi.com
2
MMBF4117 / MMBF4118 / MMBF4119 — N-Channel Switch
Typical Performance Characteristics
Figure 1. Parameter Interactions
Figure 2. Transfer Characteristics
Figure 3. Transfer Characteristics
Figure 4. Transfer Characteristics
Figure 5. Transfer Characteristics
Figure 6. Transfer Characteristics
© 1997 Fairchild Semiconductor Corporation
MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4
www.fairchildsemi.com
3
MMBF4117 / MMBF4118 / MMBF4119 — N-Channel Switch
Typical Performance Characteristics
(Continued)
Figure 7. Leakage Current vs. Voltage
Figure 8. Common Drain-Source
Figure 9. Output Conductance vs. Drain Current
Figure 10. Conductance vs. Voltage
Figure 11. Transconductance vs. Drain Current
Figure 12. Noise Voltage vs. Frequency
© 1997 Fairchild Semiconductor Corporation
MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4
www.fairchildsemi.com
4
MMBF4117 / MMBF4118 / MMBF4119 — N-Channel Switch
Physical Dimensions
2.92±0.20
3
1.40
0.95
1.30+0.20
-0.15
2.20
1
(0.29)
0.95
1.90
2
0.60
0.37
0.20
A B
1.90
LAND PATTERN
RECOMMENDATION
1.00
1.20 MAX
(0.93)
SEE DETAIL A
0.10
0.00
0.10
C
2.40±0.30
NOTES: UNLESS OTHERWISE SPECIFIED
C
GAGE PLANE
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
0.23
0.08
0.25
0.20 MIN
(0.55)
SEATING
PLANE
SCALE: 2X
Figure 13. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
© 1997 Fairchild Semiconductor Corporation
MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4
www.fairchildsemi.com
5
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