UMZ1NT1G
Complementary Dual
General Purpose
Amplifier Transistor
PNP and NPN Surface Mount
www.onsemi.com
Features
•
•
•
•
High Voltage and High Current: V
CEO
= 50 V, I
C
= 200 mA
High h
FE
: h
FE
= 200X400
Moisture Sensitivity Level: 1
ESD Rating − Human Body Model: 3A
ESD Rating
− Machine Model: C
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
Value
60
50
7.0
200
Unit
Vdc
Vdc
Vdc
mAdc
(6)
(5)
(4)
Q
1
Q
2
(1)
(2)
(3)
1
SC−88
CASE 419B
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Lead
Junction and Storage Temperature
Symbol
P
D
Max
187 (Note 1)
256 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
670 (Note 1)
490 (Note 2)
Max
250 (Note 1)
385 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
493 (Note 1)
325 (Note 2)
188 (Note 1)
208 (Note 2)
−55 to +150
Unit
mW
mW/°C
°C/W
1
3Z MG
G
R
qJA
3Z = Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
Symbol
P
D
Unit
mW
mW/°C
°C/W
°C/W
°C
ORDERING INFORMATION
Device
UMZ1NT1G
NSVUMZ1NT1G
Package
SC−88
(Pb−Free)
SC−88
(Pb−Free)
Shipping
†
3000 /
Tape & Reel
3000 /
Tape & Reel
R
qJA
R
qJL
T
J
, T
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2010
September, 2016 − Rev. 9
Publication Order Number:
UMZ1NT1/D
UMZ1NT1G
Q1: NPN
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Collector−Emitter Breakdown Voltage
(I
C
= 2.0 mAdc, I
B
= 0)
Collector−Base Breakdown Voltage
(I
C
= 10
mAdc,
I
E
= 0)
Emitter−Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector−Base Cutoff Current
(V
CB
= 45 Vdc, I
E
= 0)
Collector−Emitter Cutoff Current
(V
CE
= 10 Vdc, I
B
= 0)
(V
CE
= 30 Vdc, I
B
= 0)
(V
CE
= 30 Vdc, I
B
= 0, T
A
= 80°C)
DC Current Gain (Note 3)
(V
CE
= 6.0 Vdc, I
C
= 2.0 mAdc)
Collector−Emitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 10 mAdc)
Transistor Frequency
3. Pulse Test: Pulse Width
≤
300
ms,
D.C.
≤
2%.
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
−
−
−
h
FE
200
V
CE(sat)
f
T
−
−
−
114
−
−
−
−
400
0.25
−
Vdc
MHz
0.1
2.0
1.0
Min
50
60
7.0
−
Typ
−
−
−
−
Max
−
−
−
0.1
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
mAdc
−
Q2: PNP
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Collector−Emitter Breakdown Voltage
(I
C
= 2.0 mAdc, I
B
= 0)
Collector−Base Breakdown Voltage
(I
C
= 10
mAdc,
I
E
= 0)
Emitter−Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector−Base Cutoff Current
(V
CB
= 45 Vdc, I
E
= 0)
Collector−Emitter Cutoff Current
(V
CE
= 10 Vdc, I
B
= 0)
(V
CE
= 30 Vdc, I
B
= 0)
(V
CE
= 30 Vdc, I
B
= 0, T
A
= 80°C)
DC Current Gain (Note 3)
(V
CE
= 6.0 Vdc, I
C
= 2.0 mAdc)
Collector−Emitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 10 mAdc)
Transistor Frequency
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
−
−
−
h
FE
200
V
CE(sat)
f
T
−
−
−
142
−
−
−
−
400
−0.3
−
Vdc
MHz
−0.1
−2.0
−1.0
Min
−50
−60
−7.0
−
Typ
−
−
−
−
Max
−
−
−
−0.1
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
mAdc
−
www.onsemi.com
2
UMZ1NT1G
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
2X
aaa H D
D
A
D
5
4
H
GAGE
PLANE
6
L2
E
1
2X
2
3
L
DETAIL A
E1
aaa C
bbb H D
2X 3 TIPS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
DIM
A
A1
A2
b
C
D
E
E1
e
L
L2
aaa
bbb
ccc
ddd
MILLIMETERS
MIN
NOM MAX
−−−
−−−
1.10
0.00
−−−
0.10
0.70
0.90
1.00
0.15
0.20
0.25
0.08
0.15
0.22
1.80
2.00
2.20
2.00
2.10
2.20
1.15
1.25
1.35
0.65 BSC
0.26
0.36
0.46
0.15 BSC
0.15
0.30
0.10
0.10
INCHES
NOM MAX
−−− 0.043
−−− 0.004
0.035 0.039
0.008 0.010
0.006 0.009
0.078 0.086
0.082 0.086
0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.006 BSC
0.006
0.012
0.004
0.004
MIN
−−−
0.000
0.027
0.006
0.003
0.070
0.078
0.045
e
B
TOP VIEW
6X
b
ddd
M
C A-B D
A2
A
DETAIL A
6X
ccc C
SIDE VIEW
A1
C
SEATING
PLANE
c
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.30
6X
0.66
2.50
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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For additional information, please contact your local
Sales Representative
◊
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5
UMZ1NT1/D
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