19-4149; Rev 1; 8/08
Single- and Dual-Bidirectional
Low-Level Translator
General Description
The MAX13046E/MAX13047E ±15kV ESD-protected
bidirectional level translators provide level shifting for
data transfer in a multivoltage system. The MAX13046E
is a single-channel translator, and the MAX13047E is a
dual-channel translator. Externally applied voltages,
V
CC
and V
L
, set the logic level on either side of the
device. The MAX13046E/MAX13047E utilize a transmis-
sion-gate-based design to allow data translation in
either direction (V
L
↔V
CC
) on any single data line. The
MAX13046E/MAX13047E accept V
L
from +1.1V to the
minimum of either +3.6V or (V
CC
+ 0.3V), and V
CC
from
+1.65V to +5.5V, making these devices ideal for data
transfer between low-voltage ASICs/PLDs and higher
voltage systems.
The MAX13046E/MAX13047E feature a shutdown mode
that reduces supply current to less than 1µA thermal
short-circuit protection, and ±15kV ESD protection on the
V
CC
side for enhanced protection in applications that
route signals externally. The MAX13046E/MAX13047E
operate at a guaranteed data rate of 8Mbps when push-
pull driving is used.
The MAX13046E is available in a 6-pin µDFN package,
and the MAX13047E is available in a 10-pin UTQFN.
Both devices are specified over the extended -40°C to
+85°C operating temperature range.
Features
♦
Bidirectional Level Translation
♦
Operation Down to +1.1V on V
L
♦
Ultra-Low Supply Current in Shutdown Mode
1µA (max)
♦
Guaranteed Push-Pull Driving Data Rate
8Mbps (+1.2V
≤
V
L
≤
+3.6V, V
CC
≤
+5.5V)
16Mbps (+1.8V
≤
V
L
≤
V
CC
≤
+3.3V)
♦
Extended ESD Protection on the I/O V
CC
Lines
±15kV Human Body Model
±15kV IEC61000-4-2 Air-Gap Discharge Method
±8kV IEC61000-4-2 Contact Discharge
♦
Low Supply Current
♦
Short-Circuit Protection
♦
Space-Saving µDFN and UTQFN Packages
MAX13046E/MAX13047E
Pin Configurations
TOP VIEW
MAX13046E
V
CC
6
SHDN
5
I/O V
CC
4
+
1
2
GND
3
I/O V
L
V
L1
Applications
I
2
C and 1-Wire
®
Level Translation
CMOS Logic-Level Translation
Cell Phones
Portable Devices
I/O V
CC1
GND
8
9
µDFN
1mm
×
1.5mm
MAX13047E
N.C.
7
V
CC
6
5
4
3
1
I/O V
L2
2
V
L
I/O V
CC2
SHDN
N.C.
1-Wire is a registered trademark of Maxim Integrated Products, Inc.
I/O V
L1
10
+
Typical Application Circuits appear at end of data sheet.
UTQFN
1.4mm
×
1.8mm
Ordering Information/Selector Guide
PART
MAX13046EELT+
MAX13047EEVB+
PIN-PACKAGE
6 µDFN (1mm x 1.5mm)
10 UTQFN (1.4mm x 1.8mm)
NUMBER OF CHANNELS
1
2
TOP MARK
OC
AAC
Note:
All devices are specified over the extended -40°C to +85°C operating temperature range.
+Denotes
a lead-free/RoHS-compliant package.
EP = Exposed pad.
________________________________________________________________
Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
Single- and Dual-Bidirectional
Low-Level Translator
MAX13046E/MAX13047E
ABSOLUTE MAXIMUM RATINGS
(All voltages referenced to GND.)
V
CC
...........................................................................-0.3V to +6V
V
L
..............................................................................-0.3V to +4V
I/O V
CC
.......................................................-0.3V to (V
CC
+ 0.3V)
I/O V
L
............................................................-0.3V to (V
L
+ 0.3V)
SHDN........................................................................-0.3V
to +6V
Short-Circuit Duration I/O V
L
, I/O V
CC
to GND...........Continuous
Power Dissipation (T
A
= +70°C)
6-Pin µDFN (derate 2.1mW/°C above +70°C) .............168mW
10-Pin UTQFN (derate 6.9mW/°C above +70°C).........559mW
Junction-to-Ambient Thermal Resistance (θ
JA
) (Note 1)
6-Pin µDFN .................................................................477°C/W
10-Pin UTQFN ...........................................................20.1°C/W
Junction-to-Ambient Thermal Resistance (θ
JC
) (Note 1)
6-Pin µDFN ................................................................20.1°C/W
10-Pin UTQFN .........................................................143.1°C/W
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maxim-ic.com/thermal-tutorial.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
CC
= +1.65V to +5.5V, V
L
= +1.1V to minimum of either +3.6V or ((V
CC
+ 0.3V)), I/O V
L
and I/O V
CC
are unconnected, T
A
= -40°C to
+85°C, unless otherwise noted. Typical values are V
CC
= +3.3V, V
L
= +1.8V at T
A
= +25°C.) (Notes 2, 3)
PARAMETER
POWER SUPPLY
V
L
Supply Range
V
CC
Supply Range
Supply Current from V
CC
Supply Current from V
L
V
CC
Shutdown-Mode Supply Current
V
L
Shutdown-Mode Supply Current
I/O V
L
and I/O V
CC
Shutdown-Mode
Leakage Current
SHDN
Input Leakage
ESD PROTECTION
Human Body Model
I/O V
CC
(Note 4)
All Other Pins
LOGIC-LEVEL THRESHOLDS
I/O V
L
Input-Voltage High
I/O V
L
Input-Voltage Low
V
IHL
V
ILL
V
L
-
0.2
0.15
V
V
IEC 61000-4-2 Air-Gap Discharge
IEC 61000-4-2 Contact Discharge
Human Body Model
±15V
±15V
±8V
±2
kV
kV
V
L
V
CC
I
QVCC
I
QVL
I
SD-VCC
I
SD-VL
I
SD-LKG
T
A
= +25°C,
SHDN
= GND
T
A
= +25°C,
SHDN
= GND
T
A
= +25°C,
SHDN
= GND
T
A
= +25°C
0.03
0.03
0.02
0.02
V
CC
> 3.3V
V
CC
≤
3.3V
1.1
1.1
1.65
3.6V
V
CC
+ 0.3V
5.5
10
15
1
1
0.5
0.1
V
V
µA
µA
µA
µA
µA
µA
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
2
_______________________________________________________________________________________
Single- and Dual-Bidirectional
Low-Level Translator
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= +1.65V to +5.5V, V
L
= +1.1V to minimum of either +3.6V or ((V
CC
+ 0.3V)), I/O V
L
and I/O V
CC
are unconnected, T
A
= -40°C to
+85°C, unless otherwise noted. Typical values are V
CC
= +3.3V, V
L
= +1.8V at T
A
= +25°C.) (Notes 2, 3)
PARAMETER
I/O V
CC
Input-Voltage High
I/O V
CC
Input-Voltage Low
I/O V
L
Output-Voltage High
I/O V
L
Output-Voltage Low
I/O V
CC
Output-Voltage High
I/O V
CC
Output-Voltage Low
SHDN
Input-Voltage High
SHDN
Input-Voltage Low
I/O V
L
-to-I/O V
CC
Resistance
V
CC
Shutdown Threshold Low
V
CC
Shutdown Threshold High
V
L
Shutdown Threshold
Pullup Resistance
RISE/FALL-TIME ACCELERATOR STAGE
Accelerator Pulse Duration
I/O V
L
Output-Accelerator Source
Impedance
I/O V
CC
Output-Accelerator Source
Impedance
I/O V
L
Output-Accelerator Source
Impedance
I/O V
CC
Output-Accelerator Source
Impedance
V
L
= 1.7V
V
CC
= 2.2V
V
L
= 3.2V
V
CC
= 3.6V
20
13
17
6
10
ns
Ω
Ω
Ω
Ω
V
TH_L_VCC
V
CC
falling, V
L
= +3.3V
0.5
0.3
0.35
6
V
TH_H_VCC
V
CC
rising, V
L
= +3.3V
V
TH_VL
V
CC
= V
L
= +3.3V
SYMBOL
V
IHC
V
ILC
V
OHL
V
OLL
V
OHC
V
OLC
V
IH-SHDN
V
IL-SHDN
80
0.8
0.6
0.75
10
I/O V
L
source current = 20µA,
V
I/O VCC
> V
CC
- 0.4V
I/O V
L
sink current = 1mA,
V
I/O VCC
< 0.15V
I/O V
CC
source current = 20µA,
V
I/O VL
> V
L
- 0.2V
I/O V
CC
sink current = 1mA,
V
I/O VL
< 0.15V
V
L
> 1.2
1.1
≤
V
L
< 1.2
V
L
- 0.2
V
L
- 0.1
0.15
250
1.1
0.9
1.06
15.5
0.67 x
V
CC
0.4
0.67 x
V
L
0.4
CONDITIONS
MIN
V
CC
-
0.4
0.15
TYP
MAX
UNITS
V
V
V
V
V
V
V
V
Ω
V
V
V
kΩ
MAX13046E/MAX13047E
_______________________________________________________________________________________
3
Single- and Dual-Bidirectional
Low-Level Translator
MAX13046E/MAX13047E
TIMING CHARACTERISTICS FOR +1.2V
≤
V
L
≤
MINIMUM OF EITHER +3.6V OR (V
CC
+ 0.3V)
(V
CC
≤
±5.5V, +1.2V
≤
V
L
≤
minimum of either +3.6V or ((V
CC
+ 0.3V)), R
S
= 50Ω, R
L
= 1MΩ, CL = 15pF, T
A
= -40°C to +85°C, unless
otherwise noted. Typical values are V
CC
= +3.3V, V
L
= +1.8V at T
A
= +25°C.) (Notes 2, 3, 5)
PARAMETER
I/O V
CC
Rise Time
I/O V
CC
Fall Time
I/O V
L
Rise Time
I/O V
L
Fall Time
SYMBOL
t
RVCC
t
FVCC
t
RVL
t
FVL
t
PD-VL-VCC
Propagation Delay
t
PD-VCC-VL
Channel-to-Channel Skew
Maximum Data Rate
t
SKEW
Driving I/O V
CC
Each translator
equally loaded
Push-pull driving
Open-drain driving
CONDITIONS
Push-pull driving, Figure 1a
Open-drain driving, Figure 1c
Push-pull driving, Figure 1a
Open-drain driving, Figure 1c
Push-pull driving, Figure 1b
Open-drain driving, Figure 1d
Push-pull driving, Figure 1
Open-drain driving, Figure 1d
Driving I/O V
L
Push-pull driving
Open-drain driving
Push-pull driving
Open-drain driving
Push-pull driving
Open-drain driving
8
500
MIN
TYP
7
170
6
20
8
180
3
30
5
210
4
190
MAX
25
400
37
50
30
400
56
60
30
1000
30
1000
20
50
ns
Mbps
kbps
ns
UNITS
ns
ns
ns
ns
TIMING CHARACTERISTICS FOR +1.1V
≤
V
L
≤
+1.2V
(V
CC
≤
±5.5V, +1.1V
≤
V
L
≤
+1.2V, R
S
= 50Ω, R
L
= 1MΩ, C
L
= 15pF, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are
V
CC
= +3.3V, V
L
= +1.8V at T
A
= +25°C.) (Notes 2, 3, 5)
PARAMETER
I/O V
CC
Rise Time
I/O V
CC
Fall Time
I/O V
L
Rise Time
I/O V
L
Fall Time
SYMBOL
t
RVCC
t
FVCC
t
RVL
t
FVL
t
PD-VL-VCC
Propagation Delay
t
PD-VCC-VL
Channel-to-Channel Skew
Maximum Data Rate
t
SKEW
Driving I/O V
CC
Each translator
equally loaded
Push-pull driving
Open-drain driving
CONDITIONS
Push-pull driving, Figure 1a
Open-drain driving, Figure 1c
Push-pull driving, Figure 1a
Open-drain driving, Figure 1c
Push-pull driving, Figure 1b
Open-drain driving, Figure 1d
Push-pull driving, Figure 1
Open-drain driving, Figure 1d
Driving I/O V
L
Push-pull driving
Open-drain driving
Push-pull driving
Open-drain driving
Push-pull driving
Open-drain driving
1.2
500
MIN
TYP
7
170
6
20
8
180
3
30
5
210
4
190
MAX
200
400
37
50
30
400
30
60
200
1000
200
1000
20
50
ns
Mbps
kbps
ns
UNITS
ns
ns
ns
ns
4
_______________________________________________________________________________________
Single- and Dual-Bidirectional
Low-Level Translator
TIMING CHARACTERISTICS FOR +1.8V
≤
V
L
≤
V
CC
≤
+3.3V
(+1.8V
≤
V
L
≤
V
CC
≤
+3.3V, R
S
= 50Ω, R
L
= 1MΩ, C
L
= 15pF, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are V
CC
= +3.3V,
V
L
= +1.8V at T
A
= +25°C.) (Notes 2, 3, 5)
PARAMETER
I/O V
CC
Rise Time
I/O V
CC
Fall Time
I/O V
L
Rise Time
I/O V
L
Fall Time
Propagation Delay
Channel-to-Channel Skew
Maximum Data Rate
SYMBOL
t
RVCC
t
FVCC
t
RVL
t
FVL
t
PD-VL-VCC
t
PD-VCC-VL
t
SKEW
CONDITIONS
Push-pull driving, Figure 1a
Push-pull driving, Figure 1a
Push-pull driving, Figure 1b
Push-pull driving, Figure 1b
Push-pull driving, driving I/O V
L
Push-pull driving, driving I/O V
CC
Push-pull driving, each translator
equally loaded
Push-pull driving
16
MIN
TYP
MAX
15
15
15
15
15
15
10
UNITS
ns
ns
ns
ns
ns
ns
Mbps
MAX13046E/MAX13047E
Note 2:
All units are 100% production tested at T
A
= +25°C. Limits over the operating temperature range are guaranteed by design
and not production tested.
Note 3:
For normal operation, ensure V
L
< (V
CC
+ 0.3V). During power-up, V
L
> (V
CC
+ 0.3V) does not damage the device.
Note 4:
ESD protection is guaranteed by design. To ensure maximum ESD protection, place a 1µF ceramic capacitor between V
CC
and GND. See
Typical Application Circuits.
Note 5:
Timing is measured using 10% of input to 90% of output.
_______________________________________________________________________________________
5
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