VS-85EPF12 Soft Recovery Series
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 85 A
1
FEATURES
• Glass passivated pallet chip junction
• 150 °C max. operating junction temperature
• Output rectification and freewheeling in
inverters, choppers and converters
• Input rectifications where severe restrictions
on conducted EMI should be met
• Screw mounting only
• Designed and qualified according to JEDEC
®
-JESD 47
• AEC-Q101 qualified
• PowerTab
®
package
PowerTab
®
85 A
1200 V
1.36 V
1250 A
95 ns
150 °C
Single die
0.5
2
Cathode
1
Anode
2
PowerTab
®
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
t
rr
T
J
max.
Diode variation
Snap factor
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The VS-85EPF12 fast soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
Available in the new PowerTab package, this new series is
suitable for a large range of applications combining
excellent die to footprint ratio and sturdeness connectivity
for use in high current environments.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
F(RMS)
V
RRM
I
FSM
V
F
t
rr
T
J
100 A, T
J
= 25 °C
1 A, - 100 A/μs
Range
CHARACTERISTICS
Rect. conduction 50 % duty cycle at T
C
= 85 °C
VALUES
85
160
1200
1250
1.4
95
-40 to +150
UNITS
A
V
A
V
ns
°C
VOLTAGE RATINGS
TYPE NUMBER
VS-85EPF12
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1300
I
RRM
AT 150 °C
mA
15
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 85 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
85
1100
1250
5000
7000
70 000
A
2
s
A
2
s
A
UNITS
Revision: 16-Jun-15
Document Number: 93159
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-85EPF12 Soft Recovery Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
85 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.36
4.03
0.87
0.1
15
UNITS
V
m
V
mA
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
SYMBOL
t
rr
I
rr
Q
rr
S
TEST CONDITIONS
I
F
at 85 A
pk
25 A/μs
25 °C
VALUES
480
7.1
2.1
0.5
UNITS
ns
A
μC
dir
dt
Q
rr
I
RM(REC)
I
FM
t
rr
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style PowerTab
®
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
-40 to +150
0.35
40
0.2
6
0.21
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
85EPF12
°C/W
UNITS
°C
Mounting torque
Marking device
Revision: 16-Jun-15
Document Number: 93159
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-85EPF12 Soft Recovery Series
www.vishay.com
Vishay Semiconductors
200
150
R
thJC
(DC) = 0.35 K/W
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
140
130
Ø
180
160
140
120
100
80
60
120
110
100
90
80
30°
70
0
10
20
30
40
50
60°
Conduction angle
DC
180°
120°
90°
60°
30°
RMS limit
Ø
90°
180°
120°
40
20
0
0
20
40
60
Conduction period
T
J
= 150 °C
80
100
120
140
60
70
80
90
93159_04
93159_01
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
R
thJC
(DC) = 0.35 °C/W
1200
1100
At any rated load condition and with
rated V
RRM
applied following
surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
Maximum Allowable Case
Temperature (°C)
140
130
Ø
Peak Half
Sine
Wave
Forward Current (A)
1000
900
800
700
600
500
400
300
120
110
100
90
60°
80
30°
70
0
20
40
60
90°
Conduction period
DC
120°
180°
80
100
120
140
93159_05
1
10
100
93159_02
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
160
1400
180°
120°
90°
60°
30°
RMS limit
1300
1200
Maximum Average Forward
Power Loss (W)
140
120
100
80
60
40
20
Peak Half
Sine
Wave
Forward Current (A)
1100
1000
900
800
700
600
500
400
Maximum non-repetitive
surge
current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
Ø
Conduction angle
T
J
= 150 °C
0
0
10
20
30
40
50
60
70
80
90
300
0.01
93159_06
0.1
1
93159_03
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 16-Jun-15
Document Number: 93159
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-85EPF12 Soft Recovery Series
www.vishay.com
Vishay Semiconductors
12 000
10 000
8000
6000
4000
2000
I
FM
= 1 A
I
FM
= 40 A
I
FM
= 20 A
I
FM
= 10 A
T
J
= 25 °C
I
FM
= 80 A
Instantaneous Forward Current (A)
1000
100
T
J
= 150 °C
10
T
J
= 25 °C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Q
rr
- Typical Reverse
Recovery Charge (nC)
0
0
40
80
120
160
200
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
800
700
T
J
= 25 °C
25 000
T
J
= 150 °C
I
FM
= 80 A
600
500
400
300
200
100
I
FM
= 1 A
0
0
40
80
120
160
200
I
FM
= 20 A
I
FM
= 40 A
I
FM
= 10 A
I
FM
= 80 A
Q
rr
- Typical Reverse
Recovery Charge (nC)
t
rr
- Typical Reverse
Recovery Time (ns)
20 000
15 000
I
FM
= 40 A
10 000
I
FM
= 20 A
I
FM
= 10 A
5000
I
FM
= 1 A
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
1800
1600
T
J
= 150 °C
45
40
T
J
= 25 °C
I
FM
= 80 A
I
rr
- Typical Reverse
Recovery Current (A)
t
rr
- Typical Reverse
Recovery Time (ns)
1400
1200
1000
800
600
400
200
0
0
40
80
120
160
200
I
FM
= 80 A
I
FM
= 40 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 1 A
35
30
25
20
15
10
5
0
0
40
80
120
160
200
I
FM
= 10 A
I
FM
= 1 A
I
FM
= 40 A
I
FM
= 20 A
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
Revision: 16-Jun-15
Document Number: 93159
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-85EPF12 Soft Recovery Series
www.vishay.com
Vishay Semiconductors
60
I
FM
= 80 A
50
T
J
= 150 °C
I
FM
= 40 A
I
FM
= 20 A
I
FM
= 10 A
I
rr
- Typical Reverse
Recovery Current (A)
40
30
20
10
0
0
40
80
120
I
FM
= 1 A
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
Z
thJC
- Thermal Impedance (K/W)
1
Steady state
value
(DC operation)
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single
pulse
0.01
0.0001
0.001
0.01
0.1
1
10
93519_14
Square
Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
Revision: 16-Jun-15
Document Number: 93159
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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