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RB751S40 — Schottky Barrier Diodes
September 2009
RB751S40
Schottky Barrier Diodes
Features
•
•
•
•
•
•
•
Low Forward Voltage Drop
Flat Lead, Surface Mount Device Under 0.70mm Height
Extremely Small Outline Plastic Package SOD523F
Moisture Level Sensitivity 1
Pb-free Version and RoHS Compliant
Matte Tin (Sn) Lead Finish
Green Mold Compound
Cathode
Anode
ELECTRICAL SYMBOL
SOD-523F
Band Indicates Cathode
RB751S40 Marking : 4B
Absolute Maximum Ratings *
Symbol
V
RRM
I
F(AV)
I
FSM
T
J
T
STG
T
A
=25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-Repetitive Peak Forward Current
Operating Junction Temperature Range
Storage Temperature Range
Value
40
30
500
-55 to +125
-55 to +125
Units
V
mA
mA
°C
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Parameter
Total Device Dissipation (T
C
=25°C)
Thermal Resistance, Junction to Ambient
Value
200
500
Units
mW
°C/W
* Device mounted on FR-4 PCB minimum land pad.
Electrical Characteristics
Symbol
BV
R
I
R
V
F
Breakdown Voltage
Reverse Leakage Current
Forward Voltage
T
A
=25°C unless otherwise noted
Parameter
Test Condition
I
R
=10μA
V
R
=30V
I
F
=1mA
Min.
30
Typ.
Max.
0.5
0.37
Units
V
μA
V
© 2009 Fairchild Semiconductor Corporation
RB751S40 Rev. A2
1
www.fairchildsemi.com
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