Data Sheet BTS50055-1TMC
Smart Highside High Current Power Switch
Reversave
•
Reverse battery protection by self turn on of
power MOSFET
•
Overload protection
•
Current limitation
•
Short circuit protection
•
Overtemperature protection
•
Overvoltage protection (including load dump)
•
Clamp of negative voltage at output
•
Fast deenergizing of inductive loads
1
)
•
Low ohmic inverse current operation
•
Diagnostic feedback with load current sense
•
Open load detection via current sense
•
Loss of
V
bb
protection
2
)
•
Electrostatic discharge
(ESD) protection
•
Green product (RoHS compliant)
•
AEC qualified
Features
Product Summary
Operating voltage
On-state resistance
Noinal current
Load current (ISO)
Short circuit current limitation
Current sense ratio
V
bb(on)
5.0 ... 34
R
ON
I
L(nom)
I
L(ISO)
I
L(SC)
I
L :
I
IS
V
6.0
mΩ
17 A
70
A
130
A
14 000
PG-TO220-7-4
7
1
S M D
•
Power switch with current sense diagnostic
feedback for 12 V DC grounded loads
•
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and inductive loads
•
Replaces electromechanical relays, fuses and discrete circuits
Application
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS
chip on chip technology. Providing embedded protective functions.
4 & Tab
R
Voltage
source
Overvoltage
protection
Current
limit
Gate
protection
bb
+ V bb
Voltage
sensor
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
OUT
1,2,6,7
I
L
Current
Sense
Load
3
IN
ESD
Logic
I
IN
Temperature
sensor
I
IS
IS
PROFET
Load GND
V
IN
V
IS
Logic GND
5
R
IS
1
)
2
)
With additional external diode.
Additional external diode required for energized inductive loads (see page 8).
Infineon Technologies AG
Page 1of 17
2010-April-27
Data Sheet BTS50055-1TMC
Pin
1
2
3
4
Symbol
OUT
OUT
IN
Vbb
O
O
I
Function
Output to the load. The pins 1,2,6 and 7 must be shorted with each other
3
especially in high current applications!
)
Output to the load. The pins 1,2,6 and 7 must be shorted with each other
especially in high current applications!
3)
Input, activates the power switch in case of short to ground
Positive power supply voltage, the tab is electrically connected to this pin.
In high current applications the tab should be used for the V
bb
connection
4
instead of this pin
)
.
Diagnostic feedback providing a sense current proportional to the load
current; zero current on failure (see Truth Table on page 6)
Output to the load. The pins 1,2,6 and 7 must be shorted with each other
especially in high current applications!
3)
Output to the load. The pins 1,2,6 and 7 must be shorted with each other
especially in high current applications!
3)
+
5
6
7
IS
OUT
OUT
S
O
O
Maximum Ratings
at
T
j
= 25 °C unless otherwise specified
Parameter
Supply voltage
(overvoltage protection see page 4)
Supply voltage for short circuit protection,
T
j,start
=-40 ...+150°C:
(E
AS
limitation see diagram on page 9)
Load current
(short circuit current, see page 5)
Load dump protection
V
LoadDump
=
V
A
+
V
s
,
V
A
= 13.5 V
5
R
I
)
= 2
Ω,
R
L
= 0.54
Ω,
t
d
= 200 ms,
IN, IS = open or grounded
Operating temperature range
Storage temperature range
Power dissipation (DC), T
C
≤
25 °C
Inductive load switch-off energy dissipation, single pulse
V
bb
= 12V,
T
j,start
= 150°C,
T
C
= 150°C const.,
I
L
= 20 A, Z
L
= 7.5 mH, 0
Ω,
(see diagrams on page 9 )
Electrostatic discharge capability (ESD)
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ
Symbol
V
bb
V
bb
I
L
V
Load dump
6)
T
j
T
stg
P
tot
E
AS
V
ESD
I
IN
I
IS
Values
42
34
self-limited
75
-40 ...+150
-55 ...+150
170
1.5
4
+15 , -250
+15 , -250
Unit
V
V
A
V
°C
W
J
kV
mA
Current through input pin (DC)
Current through current sense status pin (DC)
see internal circuit diagrams on page 7
3
)
4
)
5
)
6
)
Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy
Otherwise add about 0.3 mΩ to the R
ON
if the pin is used instead of the tab.
R
I
= internal resistance of the load dump test pulse generator.
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
Page 2 of 17
2010-April-27
Data Sheet BTS50055-1TMC
Thermal Characteristics
Parameter and Conditions
Thermal resistance
Symbol
7
chip - case
:
R
thJC
)
junction - ambient (free air):
R
thJA
8
SMD version, device on PCB
)
:
Values
min
typ
max
--
-- 0.75
60
--
--
33
Unit
K/W
Electrical Characteristics
Parameter and Conditions
at
T
j
= -40 ... +150 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance
(Tab to pins 1,2,6,7)
V
IN
= 0,
I
L
= 20 A
T
j
= 25 °C:
T
j
= 150 °C:
V
IN
= 0,
I
L
= 90 A
T
j
= 150 °C:
9
V
bb
= 6V
)
,
V
IN
= 0,
I
L
= 20 A
T
j
= 150 °C:
10
)
Nominal load current ,
(Tab to pins 1,2,6,7)
ISO Proposal:
V
ON
= 0.5 V,T
C
= 85°C,T
j
≤
150°C
11)
SMD
8)
:
T
A
= 85 °C,
T
j
≤
150 °C
V
ON
≤
0.5 V
Maximum load current in resistive range
(Tab to pins 1,2,6,7)
V
ON
= 1.8 V,
T
c = 25 °C:
see diagram on page 12
V
ON
= 1.8 V,
T
c = 150 °C:
12
)
Turn-on time
IIN
to 90%
V
OUT
:
Turn-off time
IIN
to 10%
V
OUT
:
R
L
= 1
Ω
,
T
j
=-40...+150°C
Slew rate on
12)
(10 to 30%
V
OUT
)
R
L
= 1
Ω
,
T
J
= 25 °C
Slew rate off
12)
(70 to 40%
V
OUT
)
R
L
= 1
Ω
,
T
J
= 25 °C
R
ON
--
--
I
L(ISO)
I
L(NOM)
I
L(Max)
t
on
t
off
dV/dt
on
-dV/dt
off
55
13.6
250
150
130
90
0.1
0.15
4.4
7.9
--
10
70
17
--
--
230
130
0.25
0.35
6.0
10.5
10.7
17
--
--
--
--
450
210
0.6
0.6
mΩ
A
A
µs
V/µs
V/µs
7
)
8
Thermal resistance R
thCH
case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
9
)
Decrease of V
bb
below 10 V causes slowly a dynamic increase of R
ON
to a higher value of R
ON(Static)
. As
long as V
bIN
> V
bIN(u) max
, R
ON
increase is less than 10 % per second for T
J
< 85 °C.
10
)
not subject to production test, specified by design
11
)
T
J
is about 105°C under these conditions.
12
)
See timing diagram on page 13.
)
Page 3 of 17
2010-April-27
Data Sheet BTS50055-1TMC
Parameter and Conditions
at
T
j
= -40 ... +150 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Inverse Load Current Operation
On-state resistance
(Pins 1,2,6,7 to pin 4)
V
bIN
= 12 V,
I
L
= - 20 A
T
j
= 25 °C:
R
ON(inv)
see page 9
T
j
= 150 °C:
I
L(inv)
Nominal inverse load current
(Pins 1,2,6,7 to Tab)
)
V
ON
= -0.5 V,
T
c = 85 °C
11
-V
ON
Drain-source diode voltage
(V
out
> V
bb
)
I
L
= - 20 A,
I
IN
= 0,
T
j
= +150°C
Operating Parameters
Operating voltage (V
IN
= 0)
9,
)
14
Undervoltage shutdown
)
Undervoltage start of charge pump
see diagram page 14
13
--
55
--
4.4
7.9
70
0.6
6.0
10.5
--
--
mΩ
A
V
V
bb(on)
V
bIN(u)
5.0
1.5
3.0
60
62
--
--
--
3.0
4.5
--
66
15
25
34
4.5
6.0
--
--
25
50
V
V
V
V
µA
Overvoltage protection
15
)
I
bb
= 15 mA
Standby current
I
IN
= 0
V
bIN(ucp)
T
j
=-40°C:
V
bIN(Z)
T
j
= 25...+150°C:
T
j
=-40...+25°C:
I
bb(off)
T
j
= 150°C:
) If the device is turned on before a V -decrease, the operating voltage range is extended down to
V
bIN(u)
.
bb
For all voltages 0 ... 34 V the device is provides embedded protection functions against overtemperature and
short circuit.
14
)
V
bIN
= V
bb
- V
IN
see diagram on page 7. When
V
bIN
increases from less than V
bIN(u)
up to
V
bIN(ucp)
= 5 V
(typ.) the charge pump is not active and
V
OUT
≈V
bb
- 3 V.
15
)
See also
V
ON(CL)
in circuit diagram on page 8.
13
Page 4 of 17
2010-April-27
Data Sheet BTS50055-1TMC
Parameter and Conditions
at
T
j
= -40 ... +150 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Values
min
typ
max
Unit
Protection Functions
Short circuit current limit
(Tab to pins 1,2,6,7)
17)
V
ON
= 6 V
T
c
=-40°C:
T
c
=25°C:
T
c
=+150°C:
18
)
Output clamp
I
L
= 40 mA:
(inductive load switch off)
see diagram Ind. and overvolt. output clamp page 7
16)
I
L(SC)
I
L(SC)
I
L(SC)
-V
OUT(CL)
--
45
--
14
110
130
115
17
--
180
--
20
A
V
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
(e.g. overvoltage)
,I
L
= 40 mA
Thermal overload trip temperature
Thermal hysteresis
V
ON(CL)
T
jt
∆
T
jt
39
150
--
--
--
--
12 400
12 000
11 400
12 200
12 000
11 500
11 100
11 500
11 400
10 000
11 000
10 600
42
--
10
--
5.4
8.9
120
14 200
13 700
12 800
14 800
14 100
13 200
15 300
14 500
13 300
17 600
15 600
13 800
47
--
--
32
7.0
12.3
--
16 000
15 400
14 200
17 400
16 200
15 000
19 500
17 500
15 200
28 500
22 000
18 000
V
°C
K
V
mΩ
Ω
Reverse Battery
Reverse battery voltage
19
)
-V
bb
On-state resistance
(Pins 1,2,6,7 to pin 4)
T
j
= 25 °C:
R
ON(rev)
V
bb
= -12V,
V
IN
= 0,
I
L
= - 20 A,
R
IS
= 1 kΩ
T
j
= 150 °C:
Integrated resistor in V
bb
line
Diagnostic Characteristics
Current sense ratio,
static on-condition,
k
ILIS
=
I
L
:
I
IS
20
,
V
ON
< 1.5 V
)
,
V
IS
<V
OUT
- 5V,
V
bIN
> 4.0 V
see diagram on page 11
R
bb
I
L
= 90 A,T
j
=-40°C:
k
ILIS
T
j
=25°C:
T
j
=150°C:
I
L
= 20 A,T
j
=-40°C:
T
j
=25°C:
T
j
=150°C:
I
L
= 10 A,T
j
=-40°C:
T
j
=25°C:
T
j
=150°C:
I
L
= 4 A,T
j
=-40°C:
T
j
=25°C:
T
j
=150°C:
I
IS
=0
by
I
IN
=0
(e.g. during deenergizing of inductive loads)
:
16
) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
17
) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit. The
lifetime will be reduced under such conditions.
18
)
This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 7). If the diode
is used, V
OUT
is clamped to V
bb
- V
ON(CL)
at inductive load switch off.
19
)
The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as
it is done with all polarity symmetric loads). Note that under off-conditions (I
IN
=
I
IS
= 0) the power transistor
is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic
drain-source diode. The temperature protection is not active during reverse current operation! Increasing
reverse battery voltage capability is simply possible as described on page 8.
20
)
If V
ON
is higher, the sense current is no longer proportional to the load current due to sense current
saturation, see
I
IS,lim
.
Page 5 of 17
2010-April-27
stm32/stm8
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