TGF3021-SM
30W, 32V, 0.03 – 4 GHz, GaN RF Transistor
Applications
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•
•
Military radar
Civilian radar
Land mobile and military radio communications
Test instrumentation
Wideband and narrowband amplifiers
Jammers
Product Features
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•
•
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Frequency: 0.03 to 4.0 GHz
Output Power (P
3dB
): 36.0 W at 2 GHz
Linear Gain: 19.3 dB at 2 GHz
Typical PAE
3dB
: 72.7% at 2 GHz
Operating Voltage: 32 V
Low thermal resistance package
CW and Pulse capable
3 x 4 mm package
Functional Block Diagram
General Description
The TriQuint TGF3021-SM is a 30 W (P
3dB
) discrete GaN
on SiC HEMT which operates from 0.03 to 4.0 GHz. The
device is constructed with TriQuint’s proven TQGaN25
process, which features advanced field plate techniques
to optimize power and efficiency at high drain bias
operating conditions. This optimization can potentially
lower system costs in terms of fewer amplifier line-ups
and lower thermal management costs.
The device is housed in an industry-standard 3 x 4 mm
surface mount QFN package.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Pin Configuration
Pin No.
11 - 16
1-6
7 – 10, 20 - 17
Back side
Label
V
D
/ RF OUT
V
G
/ RF IN
NC
Source
Ordering Information
Part
TGF3021-SM
TGF3021-SM-
EVB1
ECCN
EAR99
EAR99
Description
QFN Packaged Part
0.03 – 0.512 GHz
EVB
Datasheet: Rev A 2-27-15
© 2015 TriQuint
- 1 of 33 -
Disclaimer: Subject to change without notice
www.triquint.com
TGF3021-SM
30W, 32V, 0.03 – 4 GHz, GaN RF Transistor
Absolute Maximum Ratings
Parameter
Breakdown Voltage (BV
DG
)
Gate Voltage Range (V
G
)
Drain Current (I
D
)
Gate Current (I
G
)
Power Dissipation (P
D
)
RF Input Power, CW,
T = 25° (P
IN
)
C
Channel Temperature (T
CH
)
Storage Temperature
Recommended Operating Conditions
Parameter
Drain Voltage (V
D
)
Drain Quiescent Current (I
DQ
)
Peak Drain Current ( I
D
)
Gate Voltage (V
G
)
Channel Temperature (T
CH
)
Power Dissipation, CW (P
D
)
2
Power Dissipation, Pulse (P
D
)
3
1
Electrical
Value
100 V min.
-10 to 0 V
5.8 A
-7.5 to 16.8 mA
32.3 W
See page 10.
275 °
C
-40 to 150 °
C
Value
32 V (Typ.)
65 mA (Typ.)
1800 mA (Typ.)
-2.7 V (Typ.)
225 ° (Max)
C
25.7 W (Max)
41.5 W (Max)
specifications are measured at specified test
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device
at these conditions is not implied.
conditions.
Specifications are not guaranteed over all recommended operating
conditions.
2
Package at 85 °
C
3
100uS Pulse Width, 20 % Duty Cycle, package at 85 °
C
Datasheet: Rev A 2-27-15
© 2015 TriQuint
- 2 of 33 -
Disclaimer: Subject to change without notice
www.triquint.com
TGF3021-SM
30W, 32V, 0.03 – 4 GHz, GaN RF Transistor
Pulsed RF Characterization – Load Pull Performance
Test conditions unless otherwise noted: T
A
= 25 ° V
D
= 32 V, I
DQ
= 65 mA, Pulse: 100uS Pulse Width, 20 % Duty Cycle
C,
Symbol Parameter
Freq
1.5 GHz
2.0 GHz
2.5 GHz
3.0 GHz
3.5 GHz
4.0 GHz
1.5 GHz
2.0 GHz
2.5 GHz
3.0 GHz
3.5 GHz
4.0 GHz
1.5 GHz
2.0 GHz
2.5 GHz
3.0 GHz
3.5 GHz
4.0 GHz
1.5 GHz
2.0 GHz
2.5 GHz
3.0 GHz
3.5 GHz
4.0 GHz
Min
Typical
22.1
19.3
17.3
15.9
14.9
12.2
45.5
45.6
45.6
45.4
45.4
44.4
75.5
72.7
64.4
62.9
61.5
42.4
19.1
16.3
14.3
12.9
11.9
9.2
Max
Units
G
LIN
Linear Gain, Power Tuned
dB
P
3dB
Output Power at 3 dB Gain Compression, Power
Tuned
dBm
PAE
3dB
Power-Added Efficiency at 3 dB Gain
Compression, Efficiency Tuned
%
G
3dB
Gain at 3 dB Compression, Power Tuned
dB
Datasheet: Rev A 2-27-15
© 2015 TriQuint
- 3 of 33 -
Disclaimer: Subject to change without notice
www.triquint.com
TGF3021-SM
30W, 32V, 0.03 – 4 GHz, GaN RF Transistor
CW RF Characterization – Load Pull Performance
Test conditions unless otherwise noted: T
A
= 25 ° V
D
= 32 V, I
DQ
= 65 mA
C,
Symbol Parameter
Freq
2.0 GHz
2.5 GHz
Min
Typical
19.1
17.4
Max
Units
G
LIN
Linear Gain, Power Tuned
3.0 GHz
3.5 GHz
2.0 GHz
16.3
15.3
43.8
43.7
dB
P
1dB
Output Power at 1 dB Gain Compression, Power
Tuned
2.5 GHz
3.0 GHz
3.5 GHz
2.0 GHz
dBm
43.6
43.4
70.6
63
%
3.0 GHz
3.5 GHz
2.0 GHz
2.5 GHz
62.3
62.5
18.1
16.4
dB
3.0 GHz
3.5 GHz
15.3
14.3
PAE
1dB
Power-Added Efficiency at 1 dB Gain
Compression, Efficiency Tuned
2.5 GHz
G
1dB
Gain at 1 dB Compression, Power Tuned
Datasheet: Rev A 2-27-15
© 2015 TriQuint
- 4 of 33 -
Disclaimer: Subject to change without notice
www.triquint.com
TGF3021-SM
30W, 32V, 0.03 – 4 GHz, GaN RF Transistor
RF Characterization – 0.05 – 0.55 GHz EVB Performance at 0.25 GHz
Test conditions unless otherwise noted: T
A
= 25 ° V
D
= 32 V, I
DQ
= 65 mA, Signal: CW
C,
Symbol Parameter
G
LIN
P
1dB
PAE
1dB
G
1dB
Linear Gain
Output Power at 1 dB Gain Compression
Power-Added Efficiency at 3 dB Gain
Compression
Gain at 3 dB Compression
Min
Typical
21.8
25.7
52.4
20.8
Max
Units
dB
W
%
dB
RF Characterization – Test Performance at 2.6 GHz
Test conditions unless otherwise noted: T
A
= 25 ° V
D
= 32 V, I
DQ
= 60 mA, Signal: 100uS Pulse Width, 20% Duty Cycle
C,
Symbol Parameter
P
3dB
DrE
3dB
G
3dB
Output Power at 1 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Gain at 3 dB Compression
Min
Typical
21.4
65
14.3
Max
Units
W
%
dB
RF Characterization – Mismatch Ruggedness at 512 MHz
Test conditions unless otherwise noted: T
A
= 25 ° V
D
= 32 V, I
DQ
= 65 mA
C,
Driving input power is determined at pulsed compression under matched condition at EVB output connector.
Symbol Parameter
VSWR
Impedance Mismatch Ruggedness
dB Compression
1
Typical
10:1
Datasheet: Rev A 2-27-15
© 2015 TriQuint
- 5 of 33 -
Disclaimer: Subject to change without notice
www.triquint.com
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