NTLUD3191PZ
Power MOSFET
Features
−20
V,
−1.8
A,
mCoolt
Dual P−Channel,
ESD, 1.6x1.6x0.55 mm UDFN Package
•
UDFN Package with Exposed Drain Pads for Excellent Thermal
•
•
•
•
•
•
•
•
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V
(BR)DSS
R
DS(on)
MAX
250 mW @
−4.5
V
−20
V
380 mW @
−2.5
V
500 mW @
−1.8
V
700 mW @
−1.5
V
I
D
MAX
−1.5
A
−1.0
A
−0.5
A
−0.2
A
Conduction
Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving
ESD
This is a Halide Free Device
This is a Pb−Free Device
High Side Load Switch
PA Switch
Battery Switch
Optimized for Power Management Applications for Portable
Products, such as Cell Phones, PMP, DSC, GPS, and others
Applications
D1
D2
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
t
≤
5s
Power Dissipation
(Note 1)
Steady
State
t
≤
5s
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
tp = 10
ms
P
D
I
DM
T
J
,
T
STG
I
S
T
L
ESD
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
−20
±8.0
−1.4
−1.0
−1.8
0.8
1.3
−1.1
−0.8
0.5
−8.0
-55 to
150
−1.0
260
1000
W
A
°C
A
°C
V
A
W
Units
V
V
A
G1
G2
S1
P−Channel MOSFET
S2
MARKING
DIAGRAM
6
1
UDFN6
CASE 517AT
mCOOLt
1
AC MG
G
AC = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
Power Dissipation (Note 2)
Pulsed Drain Current
Operating Junction and Storage
Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Gate-to-Source ESD Rating
(HBM) per JESD22−A114F
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm
2
, 2 oz. Cu.
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2009
April, 2009
−
Rev. 1
1
Publication Order Number:
NTLUD3191PZ/D
NTLUD3191PZ
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t
≤
5 s (Note 3)
Junction-to-Ambient – Steady State min Pad (Note 4)
Symbol
R
θJA
R
θJA
R
θJA
Max
155
100
245
Units
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temp. Coefficient
Drain−to−Source On Resistance
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
=
−4.5
V, I
D
=
−1.5
A
V
GS
=
−2.5
V, I
D
=
−1.0
A
V
GS
=
−1.8
V, I
D
=
−0.5
A
V
GS
=
−1.5
V, I
D
=
−0.2
A
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
g
FS
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
t
d(ON)
t
r
t
d(OFF)
t
f
VSD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, dISD/dt = 100 A/ms,
I
S
=
−1.0
A
T
J
= 25°C
T
J
= 85°C
V
GS
=
−4.5
V, V
DD
=
−10
V,
I
D
=
−1.5
A, R
G
= 1
W
V
GS
=
−4.5
V, V
DS
=
−10
V;
ID =
−1.5
A
V
DS
=
−5.0
V, I
D
=
−0.2
A
CHARGES, CAPACITANCES & GATE RESISTANCE
160
V
GS
= 0 V, f = 1 MHz,
V
DS
=
−10
V
32
23
2.3
0.2
0.4
0.7
ns
3.5
nC
pF
V
GS
= V
DS
, I
D
= 250
mA
−0.4
2.5
175
240
330
410
1.4
250
380
500
700
S
−1.0
V
mV/°C
mW
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS
= 0 V, I
D
=
−250
mA
I
D
=
−250
mA,
ref to 25°C
V
GS
= 0 V,
V
DS
=
−20
V
T
J
= 25°C
T
J
= 85°C
−20
15
−1.0
−10
10
mA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Units
V
DS
= 0 V, V
GS
=
±8.0
V
SWITCHING CHARACTERISTICS, VGS = 4.5 V
(Note 6)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
3.
4.
5.
6.
V
GS
= 0 V,
I
S
=
−1.0
A
0.85
0.75
10
8.0
2.0
5.0
nC
ns
1.2
V
13
24
68
62
Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm
2
, 2 oz. Cu.
Pulse Test: pulse width
≤
300
ms,
duty cycle
≤
2%.
Switching characteristics are independent of operating junction temperatures.
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2
NTLUD3191PZ
TYPICAL CHARACTERISTICS
10
9
−I
D
, DRAIN CURRENT (A)
8
7
6
5
4
3
2
1
0
0
1
2
3
4
−3.0
V
−2.5
V
−2.0
V
−1.8
V
−1.5
V
5
T
J
= 25°C
V
GS
=
−4.5
V
−4.0
V
−I
D
, DRAIN CURRENT (A)
−3.5
V
5
4
3
2
1
0
V
DS
=
−5
V
T
J
= 125°C
0
0.5
1
1.5
T
J
= 25°C
T
J
=
−55°C
2
2.5
3
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
I
D
=
−0.2
A
I
D
=
−1.5
A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
1.0
0.8
0.6
0.4
0.2
0
−1.5
V
T
J
= 25°C
−1.8
V
−2.5
V
V
GS
=
−4.5
V
0
1
2
3
4
5
6
7
8
9
10
0.1
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
−I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7
1.6
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
−50
V
GS
=
−4.5
V
I
D
=
−1.5
A
10000
V
GS
= 0 V
−I
DSS
, LEAKAGE (nA)
T
J
= 150°C
1000
T
J
= 125°C
100
T
J
= 85°C
10
−25
0
25
50
75
100
125
150
0
5
10
15
20
T
J
, JUNCTION TEMPERATURE (°C)
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTLUD3191PZ
TYPICAL CHARACTERISTICS
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
250
225
C, CAPACITANCE (pF)
200
175
150
125
100
75
50
25
0
0
C
oss
C
rss
4
8
12
16
20
C
iss
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
5
4
V
DS
3
2
1
0
Q
GS
Q
GD
4
V
GS
=
−10
V
I
D
=
−1.5
A
T
J
= 25°C
0
0.25 0.5 0.75
1
1.25 1.5 1.75
2
2
V
GS
Q
T
12
10
8
6
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
0
2.25 2.5
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
−I
S
, SOURCE CURRENT (A)
100
t
d(off)
t
f
V
GS
=
−4.5
V
V
DD
=
−10
V
I
D
=
−1.5
A
t, TIME (ns)
t
r
1.0
T
J
= 150°C
T
J
= 25°C
t
d(on)
10
1
10
R
G
, GATE RESISTANCE (W)
100
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
0.35
−50
−25
0
25
50
75
100
125
POWER (W)
I
D
=
−250
mA
175
150
125
100
75
50
25
Figure 10. Diode Forward Voltage vs. Current
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
0
150 0.0000001 0.00001 0.0001 0.001 0.01
0.1
1
10
100 1000
T
J
, TEMPERATURE (°C)
SINGLE PULSE TIME (s)
Figure 11. Threshold Voltage
Figure 12. Single Pulse Maximum Power
Dissipation
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4
NTLUD3191PZ
TYPICAL CHARACTERISTICS
10
−I
D
, DRAIN CURRENT (AMPS)
10
ms
1
100
ms
V
GS
=
−8
V
0.1 SINGLE PULSE
T
C
= 25°C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1 ms
10 ms
dc
0.01
1
10
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
175
150
125
R(t) (°C/W)
100
75
50
0.5
0.2
Single Pulse
0.00001
0.0001
0.001
0.01
0.01
0.1
1
10
100
1000
0.02
25 0.1
0.05
0
0.000001
PULSE TIME (sec)
Figure 14. FET Thermal Response
DEVICE ORDERING INFORMATION
Device
NTLUD3191PZTAG
NTLUD3191PZTBG
Package
UDFN6
(Pb−Free)
UDFN6
(Pb−Free)
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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