VS-16TTS..PbF Series, VS-16TTS..-M3 Series
www.vishay.com
Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 16 A
FEATURES
2
(A)
• Designed
and
®
-JESD 47
JEDEC
qualified
according
to
• 125 °C max. operating junction temperature
2
3
TO-220AB
1
1 (K) (G) 3
• Material categorization:
for definitions of compliance
www.vishay.com/doc?99912
please see
Available
APPLICATIONS
PRIMARY CHARACTERISTICS
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
Package
Circuit configuration
10 A
800 V, 1200 V
1.4 V
60 mA
-40 °C to 125 °C
TO-220AB
Single SCR
• Typical usage is in input rectification crowbar (soft start)
and AC switch in motor control, UPS, welding, and battery
charge
DESCRIPTION
The VS-16TTS... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operating up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
Capacitive input filter T
A
= 55 °C, T
J
= 125 °C,
common heatsink of 1 °C/W
SINGLE-PHASE BRIDGE
13.5
THREE-PHASE BRIDGE
17
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
RMS
V
DRM
/V
RRM
I
TSM
V
T
dV/dt
dI/dt
T
J
Range
10 A, T
J
= 25 °C
Range
(1)
TEST CONDITIONS
Sinusoidal waveform
VALUES
10
16
800/1200
200
1.4
500
150
-40 to 125
UNITS
A
V
A
V
V/μs
A/μs
°C
Note
(1)
For higher voltage up to 1600 V contact factory
VOLTAGE RATINGS
PART NUMBER
VS-16TTS08PbF, VS-16TTS08-M3
VS-16TTS12PbF, VS-16TTS12-M3
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1200
V
DRM
, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
1200
I
RRM
/I
DRM
AT 125 °C
mA
10
Revision: 28-Sep-17
Document Number: 94603
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16TTS..PbF Series, VS-16TTS..-M3 Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
Maximum on-state
voltage
drop
On-state slope resistance
Threshold
voltage
Maximum reverse and direct leakage current
Holding current
Maximum latching current
Maximum rate of rise of off-state
voltage
Maximum rate of rise of turned-on current
SYMBOL
I
T(AV)
I
RMS
I
TSM
I
2
t
I
2
t
V
TM
r
t
V
T(TO)
I
RM
/I
DM
I
H
I
L
dV/dt
dI/dt
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no
voltage
reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no
voltage
reapplied
t = 0.1 to 10 ms, no
voltage
reapplied
10 A, T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
RRM
/V
DRM
-
200
500
150
V/μs
A/μs
TEST CONDITIONS
T
C
= 98 °C, 180° conduction, half sine wave
VALUES
TYP.
10
16
170
200
144
200
2000
1.4
24.0
1.1
0.5
10
150
mA
A
2
s
A
2
s
V
m
V
A
MAX.
UNITS
Anode supply = 6 V, resistive load, initial I
T
= 1 A
16TTS08PbF, 16TTS12PbF, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 25 °C
T
J
= T
J
max., linear to 80 °C, V
DRM
= R
g
- k = Open
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate
voltage
SYMBOL
P
GM
P
G(AV)
+ I
GM
- V
GM
Anode supply = 6 V, resistive load, T
J
= - 65 °C
Maximum required DC gate current to trigger
I
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
Maximum required DC gate
voltage
to trigger
Maximum DC gate
voltage
not to trigger
Maximum DC gate current not to trigger
Anode supply = 6 V, resistive load, T
J
= - 65 °C
V
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
V
GD
I
GD
T
J
= 125 °C, V
DRM
= Rated value
TEST CONDITIONS
VALUES
8.0
2.0
1.5
10
90
60
35
3.0
2.0
1.0
0.25
2.0
mA
V
mA
UNITS
W
A
V
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
t
gt
t
rr
t
q
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
VALUES
0.9
4
110
μs
UNITS
Revision: 28-Sep-17
Document Number: 94603
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16TTS..PbF Series, VS-16TTS..-M3 Series
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-220AB
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
-40 to 125
1.3
62
0.5
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
Marking device
16TTS08
16TTS12
Maximum Allowable Case T
emperature (°C)
120
115
110
105
100
95
90
0
2
16T S S
T .. eries
R
thJC
(DC) = 1.3 °C/ W
Maximum Average On-s
tate Power Los (W)
s
125
18
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9 10 11
Average On-state Current (A)
Conduction Angle
180°
120°
90°
60°
30°
R Limit
MS
Conduction Angle
30°
60°
90°
120°
180°
4
6
8
10
12
16T .. S
TS eries
T
J
= 125°C
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Maximum Allowable Case T
emperature (°C)
Maximum Average On-state Power Loss (W)
125
120
115
Conduction Period
25
DC
180°
120°
90°
60°
30°
16T S S
T .. eries
R
thJC
(DC) = 1.3 °C/ W
20
110
105
100
95
90
0
2
4
6
8
10
12
14
16
Average On-state Current (A)
30°
15
R Limit
MS
10
Conduction Period
60°
90°
120°
180° DC
5
16T .. S
TS eries
T
J
= 125°C
0
2
4
6
8
10
12
14
16
18
0
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 4 - On-State Power Loss Characteristics
Revision: 28-Sep-17
Document Number: 94603
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16TTS..PbF Series, VS-16TTS..-M3 Series
www.vishay.com
Vishay Semiconductors
Peak Half S Wave Forward Current (A)
ine
200
180
160
140
120
100
16T S S
T .. eries
80
0.01
Maximum Non Repetitive S
urge Current
Versus Pulse T
rain Duration.
Initial T
J
= 125°C
No Vo ltage Reap plied
R ted V
RRM
Rea pplied
a
Peak Half S Wave On-s
ine
tate Current (A)
180
160
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T
J
= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
140
120
100
16T S eries
T ..S
80
1
10
100
Number Of Equa l Amplitud e Half Cycle Current Pulses (N)
0.1
Pulse T
rain Duration (s)
1
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
Ins
tantaneous On-state Current (A)
16T S S
T .. eries
100
10
T = 25°C
J
T
J
= 125°C
1
0
1
2
3
4
5
Instantaneous On-s
tate Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
T
ransient T
hermal Impedanc e Z
thJC
(°C/ W)
10
S
teady S
tate Value
(DC Operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
S
ingle Pulse
16T S S
T .. eries
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
S
quare Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 28-Sep-17
Document Number: 94603
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16TTS..PbF Series, VS-16TTS..-M3 Series
www.vishay.com
Vishay Semiconductors
(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a )
100
Instantaneous Gate Voltage (V)
R tangular gate pulse
ec
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/ dt: 10 V, 65 ohms
10
tr = 1 µs, tp >= 6 µs
(b )
T = -10 °C
J
T = 25 °C
J
T = 125 °C
J
1
VGD
IGD
0.1
0.001
0.01
(4)
(3)
(2)
(1)
16T S S
T .. eries
0.1
1
Frequenc y Limited by PG(AV)
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
7
16
2
-
-
-
-
-
-
-
T
3
T
4
S
5
12
6
PbF
7
Vishay Semiconductors product
Current rating
Circuit configuration:
T = Single thyristor
Package:
T = TO-220AB
Type of silicon:
S = Converter grade
Voltage code x 100 = V
RRM
Environmental digit:
PbF = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
08 = 800 V
12 = 1200 V
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-16TTS08PbF
VS-16TTS08-M3
VS-16TTS12PbF
VS-16TTS12-M3
QUANTITY PER T/R
50
50
50
50
MINIMUM ORDER QUANTITY
1000
1000
1000
1000
PACKAGING DESCRIPTION
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-220AB PbF
TO-220AB -M3
www.vishay.com/doc?95222
www.vishay.com/doc?95225
www.vishay.com/doc?95028
Revision: 28-Sep-17
Document Number: 94603
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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