74V1T125
SINGLE BUS BUFFER (3-STATE)
s
s
s
s
s
s
s
HIGH SPEED: t
PD
= 3.5ns (TYP.) at V
CC
= 5V
LOW POWER DISSIPATION:
I
CC
= 1µA(MAX.) at T
A
=25°C
COMPATIBLE WITH TTL OUTPUTS:
V
IH
= 2V (MIN), V
IL
= 0.8V (MAX)
POWER DOWN PROTECTION ON INPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 8mA (MIN) at V
CC
= 4.5V
BALANCED PROPAGATION DELAYS:
t
PLH
≅
t
PHL
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 4.5V to 5.5V
SOT23-5L
SOT323-5L
ORDER CODES
PACKAGE
SOT23-5L
SOT323-5L
T&R
74V1T125STR
74V1T125CTR
DESCRIPTION
The 74V1T125 is an advanced high-speed CMOS
SINGLE BUS BUFFER fabricated with sub-micron
silicon gate and double-layer metal wiring C
2
MOS
technology.
3-STATE control input G has to be set HIGH to
place the output into the high impedance state.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
PIN CONNECTION AND IEC LOGIC SYMBOLS
April 2004
1/10
74V1T125
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN N°
1
2
4
3
5
SYMBOL
1G
1A
1Y
GND
V
CC
NAME AND FUNCTION
Output Enable Input
Data Input
Data Output
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
A
X
L
H
X : Don’t Care
Z : High Impedance
G
H
L
L
Y
Z
L
H
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Current
Parameter
Value
-0.5 to +7.0
-0.5 to +7.0
-0.5 to V
CC
+ 0.5
- 20
±
20
±
25
±
50
-65 to +150
300
Unit
V
V
V
mA
mA
mA
mA
°C
°C
I
CC
or I
GND
DC V
CC
or Ground Current
Storage Temperature
T
stg
T
L
Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
O
T
op
dt/dv
Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Input Rise and Fall Time (note 1) (V
CC
= 5.0
±
0.5V)
Parameter
Value
4.5 to 5.5
0 to 5.5
0 to V
CC
-55 to 125
0 to 20
Unit
V
V
V
°C
ns/V
1) V
IN
from 0.8V to 2V
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74V1T125
CAPACITIVE CHARACTERISTICS
Test Condition
Symbol
Parameter
T
A
= 25°C
Min.
C
IN
C
OUT
C
PD
Input Capacitance
Output
Capacitance
Power Dissipation
Capacitance
(note 1)
Typ.
4
5
14
Max.
10
Value
-40 to 85°C
Min.
Max.
10
-55 to 125°C
Min.
Max.
10
pF
pF
pF
Unit
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
TEST CIRCUIT
TEST
t
PLH
, t
PHL
t
PZL
, t
PLZ
t
PZH
, t
PHZ
C
L
=15/50pF or equivalent (includes jig and probe capacitance)
R1 = 1KΩ or equivalent
R
T
= Z
OUT
of pulse generator (typically 50Ω)
SWITCH
Open
V
CC
GND
4/10
微控制器 MCU
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