NTTFS4930N
Power MOSFET
30 V, 23 A, Single N−Channel,
m8FL
Features
•
•
•
•
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
DC−DC Converters
Power Load Switch
Notebook Battery Management
Motor Control
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V
(BR)DSS
30 V
R
DS(on)
MAX
23 mW @ 10 V
30 mW @ 4.5 V
I
D
MAX
23 A
Applications
N−Channel MOSFET
D (5−8)
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation R
qJA
(Note 1)
Continuous Drain
Current R
qJA
≤
10 s
(Note 1)
Power Dissipation
R
qJA
≤
10 s (Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain Current
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C, t
p
= 10
ms
P
D
I
DM
T
J
,
T
stg
I
S
dV/dt
E
AS
P
D
I
D
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
30
±20
7.2
5.2
2.06
9.6
6.9
3.61
4.5
3.2
0.79
23
16
20.2
92
−55
to
+150
25
6.0
7.2
W
A
°C
A
V/ns
mJ
NTTFS4930NTWG
W
A
W
A
W
A
1
Unit
V
V
A
G (4)
S (1,2,3)
MARKING DIAGRAM
1
WDFN8
(m8FL)
CASE 511AB
4930
A
Y
WW
G
S
S
S
G
4930
AYWWG
G
D
D
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTTFS4930NTAG
Package
Shipping
†
WDFN8 1500/Tape & Reel
(Pb−Free)
WDFN8 5000/Tape & Reel
(Pb−Free)
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche Energy
(T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 12 A
pk
, L = 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
©
Semiconductor Components Industries, LLC, 2012
July, 2012
−
Rev. 2
1
Publication Order Number:
NTTFS4930N/D
NTTFS4930N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – (t
≤
10 s) (Note 3)
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size (40 mm
2
, 1 oz. Cu).
Symbol
R
qJC
R
qJA
R
qJA
R
qJA
Value
6.2
60.7
159
34.6
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
I
D
= 7 A
I
D
= 10 A
I
D
= 6 A
I
D
= 10 A
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
30
16
1.0
10
±100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
1.2
1.6
3.7
15
15
22.7
22.7
19
2.2
V
mV/°C
V
GS
= 10 V
V
GS
= 4.5 V
23
mW
30
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
g
FS
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
t
d(on)
t
r
t
d(off)
t
f
V
DS
= 1.5 V, I
D
= 15 A
S
476
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 15 V
197
101
5.6
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 20 A
0.5
1.5
2.5
V
GS
= 10 V, V
DS
= 15 V, I
D
= 20 A
10.3
pF
nC
nC
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
8.4
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
26.6
10.4
3.6
ns
5. Pulse Test: pulse width = 300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS4930N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
RR
t
a
t
b
Q
RR
L
S
L
D
L
G
R
G
T
A
= 25°C
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms,
I
S
= 20 A
T
J
= 25°C
T
J
= 125°C
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
4.6
17.6
13.3
2.5
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V,
I
S
= 20 A
0.97
0.89
15.3
7.4
7.9
4.6
nC
ns
1.2
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
0.38
0.054
1.3
0.6
nH
W
5. Pulse Test: pulse width = 300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
NTTFS4930N
TYPICAL CHARACTERISTICS
50
40
30
20
10
0
40
6.5 V
4.4 V
T
J
= 25°C
I
D
, DRAIN CURRENT (A)
4.5 V
4.2 V
4V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
V
GS
= 2.6 V
0
0.5 1
1.5 2
2.5 3
3.5 4
4.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
5
30
V
DS
= 10 V
10 V
8.5 V
I
D
, DRAIN CURRENT (A)
20
T
J
= 125°C
T
J
= 25°C
0
1
10
T
J
=
−55°C
5
1.5
2
2.5
3
3.5
4
4.5
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.0340
0.0300
0.0260
0.0220
0.0180
0.0140
0.0100
I
D
= 10 A
T
J
= 25°C
3.0
4.0
5.0
6.0
7.0
V
GS
(V)
8.0
9.0
10.0
Figure 3. On−Resistance vs. V
GS
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
3.8E−02
3.4E−02
3.0E−02
2.6E−02
2.2E−02
1.8E−02
1.4E−02
1.0E−02
5
T = 25°C
V
GS
= 4.5 V
V
GS
= 10 V
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
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NTTFS4930N
TYPICAL CHARACTERISTICS
1.7
1.6
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
−50
−25
0
25
50
75
100
125
I
D
= 10 A
V
GS
= 10 V
1.0E−04
1.0E−05
I
DSS
, LEAKAGE (A)
1.0E−06
1.0E−07
1.0E−08
1.0E−09
1.0E−10
1.0E−11
10
150
15
20
25
30
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V
T
J
= 150°C
Figure 5. On−Resistance Variation with
Temperature
800
V
GS
, GATE−TO−SOURCE VOLTAGE
(V)
T
J
= 25°C
V
GS
= 0 V
C, CAPACITANCE (pF)
600
C
iss
11
10
9
8
7
6
5
4
3
2
1
0
0
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
T
400
C
oss
Q
gs
Q
gd
T
J
= 25°C
V
GS
= 10 V
V
DD
= 15 V
I
D
= 20 A
2
10
4
6
8
Qg, TOTAL GATE CHARGE (nC)
12
200
C
rss
0
0
10
15
20
25
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
5
30
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
GS
= 10 V
V
DD
= 15 V
I
D
= 15 A
t
d(off)
10
t
f
t
r
30
25
20
15
10
5
0
0.1
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 25°C
100
t, TIME (ns)
1
t
d(on)
0
1
10
R
G
, GATE RESISTANCE (W)
100
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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