VS-47CTQ020SPbF, VS-47CTQ020-1PbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 20 A
TO-263AB (D
2
PAK)
TO-262AA
FEATURES
• 150 °C T
J
operation
• Center tap configuration
• Optimized for 3.3 V application
• Ultralow forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Base
common
cathode
2
Base
common
cathode
2
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
VS-47CTQ020SPbF
VS-47CTQ020-1PbF
PRODUCT SUMMARY
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
E
AS
Package
Diode variation
TO-263AB
2 x 20 A
20 V
0.34 V
310 mA at 125 °C
150 °C
18
(D
2
PAK),
TO-262AA
Common cathode
DESCRIPTION
This center tap Schottky rectifier module has been
optimized for ultralow forward voltage drop specifically for
3.3 V output power supplies. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
20 A
pk
, T
J
= 125 °C
CHARACTERISTICS
Rectangular waveform
VALUES
40
20
1000
0.34
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
V
R
TEST CONDITIONS
125 °C
150 °C
VS-47CTQ020SPbF
VS-47CTQ020-1PbF
20
10
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
per leg
per device
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 135 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
E
AS
I
AR
10 ms sine or 6 ms rect. pulse
T
J
= 25 °C, I
AS
= 3 A, L = 3 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
VALUES
20
40
1000
250
18
3
mJ
A
A
UNITS
Maximum peak one cycle
non-repetitive surge current per leg
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
Revision: 15-Aug-15
Document Number: 94228
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-47CTQ020SPbF, VS-47CTQ020-1PbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
20 A
40 A
Maximum forward voltage drop per leg
V
FM (1)
20 A
40 A
20 A
40 A
T
J
= 125 °C
Maximum reverse leakage
current per leg
I
RM (1)
T
J
= 150 °C
T
J
= 25 °C
T
J
= 125 °C
Threshold voltage
Forward slope resistance
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
V
F(TO)
r
t
C
T
L
S
dV/dt
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
T
J
= T
J
maximum
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
V
R
= 5 V
V
R
= 3.3 V
V
R
= 10 V
V
R
= Rated V
R
VALUES
0.45
0.51
0.34
0.44
0.31
0.42
60
45
306
3
310
0.188
5.9
3000
5.5
10 000
V
m
pF
nH
V/μs
mA
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-263AB (D
2
PAK)
Case style TO-262AA
SYMBOL
T
J
, T
Stg
TEST CONDITIONS
VALUES
-55 to +150
1.5
R
thJC
DC operation
0.75
R
thCS
Mounting surface, smooth and greased
0.50
2
0.07
6 (5)
12 (10)
g
oz.
kgf
cm
(lbf
in)
°C/W
UNITS
°C
Mounting torque
Marking device
47CTQ020S
47CTQ020-1
Revision: 15-Aug-15
Document Number: 94228
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-47CTQ020SPbF, VS-47CTQ020-1PbF
www.vishay.com
Vishay Semiconductors
1000
I
F
- Instantaneous Forward Current (A)
1000
I
R
- Reverse Current (mA)
T
J
= 150 °C
100
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
100
10
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1
T
J
= 50 °C
T
J
= 25 °C
0.1
1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
4
8
12
16
20
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
(Per Leg)
10 000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
1000
0
2
4
6
8
10 12 14 16
18 20 22
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
t
1
0.1
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
10
100
0.01
0.00001
0.0001
0.001
0.01
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 15-Aug-15
Document Number: 94228
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-47CTQ020SPbF, VS-47CTQ020-1PbF
www.vishay.com
Vishay Semiconductors
12
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
Allowable Case Temperature (°C)
160
DC
140
130
120
110
100
See note (1)
Square wave (D = 0.50)
10 V applied
Average Power Loss (W)
150
10
8
6
DC
4
2
0
90
0
5
10
15
20
25
30
0
5
10
15
20
25
30
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 10 V
(1)
Revision: 15-Aug-15
Document Number: 94228
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-47CTQ020SPbF, VS-47CTQ020-1PbF
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
47
2
C
3
T
4
Q
5
020
6
S
7
TRL PbF
8
9
Vishay Semiconductors product
Current rating (40 A)
Circuit configuration: C = common cathode
T = TO-220
Schottky “Q” series
Voltage rating (020 = 20 V)
S = D
2
PAK
-1 = TO-262
None = tube (50 pieces)
TRL = tape and reel (left oriented - for D
2
PAK only)
TRR = tape and reel (right oriented - for D
2
PAK only)
9
-
PbF = lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-42CTQ020SPBF
VS-42CTQ020STRRPBF
VS-42CTQ020STRLPBF
VS-42CTQ020-1PBF
QUANTITY PER REEL
50
800
800
50
MINIMUM ORDER QUANTITY
1000
800
800
1000
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter plastic tape and reel
13" diameter plastic tape and reel
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
TO-263AB (D
2
PAK)
TO-262AA
www.vishay.com/doc?95046
www.vishay.com/doc?95419
www.vishay.com/doc?95008
www.vishay.com/doc?95032
Revision: 15-Aug-15
Document Number: 94228
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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