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NST848BF3T5G

产品描述Switching Power Supplies 348W 12V 29A 115Vac or 230Vac
产品类别分立半导体    晶体管   
文件大小89KB,共4页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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NST848BF3T5G概述

Switching Power Supplies 348W 12V 29A 115Vac or 230Vac

NST848BF3T5G规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
厂商名称ON Semiconductor(安森美)
包装说明SMALL OUTLINE, R-PDSO-F3
针数3
制造商包装代码524AA
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time1 week
最大集电极电流 (IC)0.1 A
集电极-发射极最大电压30 V
配置SINGLE
最小直流电流增益 (hFE)200
JESD-30 代码R-PDSO-F3
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型NPN
最大功率耗散 (Abs)0.347 W
认证状态Not Qualified
表面贴装YES
端子面层Tin (Sn)
端子形式FLAT
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)100 MHz

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NST848BF3T5G
NPN General Purpose
Transistor
The NST848BF3T5G device is a spin−off of our popular
SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for
general purpose amplifier applications and is housed in the SOT−1123
surface mount package. This device is ideal for low−power surface
mount applications where board space is at a premium.
Features
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
NST848BF3T5G
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
30
30
5.0
100
Unit
Vdc
Vdc
Vdc
mAdc
1
3
2
h
FE
, 200−450
Low V
CE(sat)
,
0.25 V
Reduces Board Space
This is a Halide−Free Device
This is a Pb−Free Device
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter
−Base
Voltage
Collector Current
Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation, T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation, T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Lead 3
Junction and Storage Temperature Range
Symbol
P
D
(Note 1)
R
qJA
(Note 1)
P
D
(Note 2)
R
qJA
(Note 2)
R
YJL
(Note 2)
T
J
, T
stg
Max
290
2.3
432
347
2.8
360
143
−55
to
+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C/W
°C
Y
M
SOT−1123
CASE 524AA
STYLE 1
MARKING DIAGRAM
YM
= Device Code
= Date Code
ORDERING INFORMATION
Device
NST848BF3T5G
Package
Shipping
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 100 mm
2
1 oz, copper traces.
2. 500 mm
2
1 oz, copper traces.
SOT−1123 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
July, 2012
Rev. 1
1
Publication Order Number:
NST848BF3/D

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