VT5200-E3, VFT5200-E3, VBT5200-E3, VIT5200-E3
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.58 V at I
F
= 2.5 A
FEATURES
Trench MOS Barrier Schottky Rectifier
TO-220AC
TMBS
®
• Trench MOS Schottky technology
ITO-220AC
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
2
VT5200
PIN 1
PIN 2
CASE
2
1
VFT5200
PIN 1
PIN 2
• Solder dip 275 °C max. 10 s, per JESD 22-B106
(for TO-220AC, ITO-220AC and TO-262AA package)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
1
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
TO-263AB
K
K
TO-262AA
MECHANICAL DATA
A
NC
VBT5200
NC
A
K
HEATSINK
A
K
NC
VIT5200
NC
A
K
HEATSINK
Case:
TO-220AC, ITO-220AC, TO-263AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs max.
per
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 5.0 A
T
J
max.
Package
Diode variation
5.0 A
200 V
80 A
0.65 V
150 °C
TO-220AC, ITO-220AC,
TO-263AB, TO-262AA
Single die
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Max. repetitive peak reverse voltage
Max. average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy at T
J
= 25 °C, L = 60 mH
Peak repetitive reverse current
at t
p
= 2 μs, 1 kHz, T
J
= 38 °C ± 2 °C
Voltage rate of change (rated V
R
)
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
Operating junction and storage temperature range
SYMBOL
V
RRM
I
F(AV)
I
FSM
E
AS
I
RRM
dV/dt
V
AC
T
J
, T
STG
VT5200
VFT5200
200
5.0
80
30
0.5
10 000
1500
-40 to +150
VBT5200
VIT5200
UNIT
V
A
A
mJ
A
V/μs
V
°C
Revision: 12-Dec-16
Document Number: 89176
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VT5200-E3, VFT5200-E3, VBT5200-E3, VIT5200-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Breakdown voltage
TEST CONDITIONS
I
R
= 1.0 mA
I
F
= 2.5 A
Instantaneous forward voltage
I
F
= 5.0 A
I
F
= 2.5 A
I
F
= 5.0 A
V
R
= 180 V
Reverse current
V
R
= 200 V
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
T
A
= 25 °C
T
A
= 25 °C
V
F (1)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R (2)
SYMBOL
V
BR
TYP.
200 (min.)
0.81
1.10
0.58
0.65
1.7
1.8
-
2.5
MAX.
-
-
1.60
-
0.73
-
-
150
10
μA
mA
μA
mA
V
UNIT
V
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JC
VT5200
3.5
VFT5200
7.0
VBT5200
3.5
VIT5200
3.5
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AC
ITO-220AC
TO-263AB
TO-263AB
TO-262AA
PREFERRED P/N
VT5200-E3/4W
VFT5200-E3/4W
VBT5200-E3/4W
VBT5200-E3/8W
VIT5200-E3/4W
UNIT WEIGHT (g)
1.82
1.65
1.36
1.36
1.44
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
Revision: 12-Dec-16
Document Number: 89176
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VT5200-E3, VFT5200-E3, VBT5200-E3, VIT5200-E3
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
6
10
Resistive or Inductive Load
5
V(B,I)T5200
Average Forward Rectified Current (A)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
1
T
A
= 125 °C
T
A
= 100 °C
0.1
4
VFT5200
3
0.01
2
1
Mounted on
Specific
Heatsink
0
0
25
50
75
100
125
150
0.001
T
A
= 25 °C
0.0001
20
30
40
50
60
70
80
90
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
4.8
4.4
D = 0.5
1000
D = 0.8
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Average Power Disspation (W)
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
1
2
3
4
5
6
D = t
p
/T
t
p
T
D = 0.1
D = 1.0
D = 0.2
Junction Capacitance (pF)
4.0
D = 0.3
100
10
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Dissipation Characteristics
Fig. 5 - Typical Junction Capacitance
100
10
T
A
= 150 °C
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
Junction to Case
VFT5200
10
T
A
= 125 °C
T
A
= 100 °C
V(B,I)T5200
1
T
A
= 25 °C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 12-Dec-16
Document Number: 89176
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VT5200-E3, VFT5200-E3, VBT5200-E3, VIT5200-E3
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AC
0.415 (10.54)
0.380 (9.65)
0.161 (4.08)
DIA.
0.139 (3.53)
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
Vishay General Semiconductor
0.635 (16.13)
0.625 (15.87)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
PIN
2
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.603 (15.32)
0.573 (14.55)
0.110 (2.79)
0.100 (2.54)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
ITO-220AC
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.076 (1.93) REF.
45° REF.
0.600 (15.24)
0.580 (14.73)
1
0.671 (17.04)
0.651 (16.54)
2
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
7° REF.
0.350 (8.89)
0.330 (8.38)
7° REF.
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
PIN
0.110 (2.79)
0.100 (2.54)
0.025 (0.64)
0.015 (0.38)
0.028 (0.71)
0.020 (0.51)
Revision: 12-Dec-16
Document Number: 89176
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VT5200-E3, VFT5200-E3, VBT5200-E3, VIT5200-E3
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0.950 (24.13)
0.920 (23.37)
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
1
PIN
2 3
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.401 (10.19)
0.381 (9.68)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.35)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.360 (9.14)
0.320 (8.13)
NC
K
A
0.055 (1.40)
0.047 (1.19)
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
0.33 (8.38) MIN.
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
Revision: 12-Dec-16
Document Number: 89176
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
