See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
January, 2012
−
Rev. 9
1
Publication Order Number:
MM3Z2V4T1/D
M
MM3ZxxxT1G Series, SZMM3ZxxxT1G Series
ELECTRICAL CHARACTERISTICS
Symbol
V
Z
I
ZT
Z
ZT
I
ZK
Z
ZK
I
R
V
R
I
F
V
F
QV
Z
C
Reverse Current
Maximum Zener Impedance @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZK
Reverse Leakage Current @ V
R
Reverse Voltage
Forward Current
Forward Voltage @ I
F
Maximum Temperature Coefficient of V
Z
Max. Capacitance @V
R
= 0 and f = 1 MHz
V
Z
V
R
I
R
V
F
I
ZT
V
Parameter
Reverse Zener Voltage @ I
ZT
I
F
I
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, V
F
= 0.9 V Max. @ I
F
= 10 mA for all types)
Zener Voltage
(Note 2)
Device
Marking
00
01
02
05
06
07
08
09
0A
0C
0E
0F
0G
0H
0K
0L
0M
0N
0P
0T
0U
0W
0Z
10
11
12
14
18
19
20
21
1A
1C
1D
1F
1G
V
Z
(Volts)
Min
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
14.3
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
64
70
Nom
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13.25
15
16.2
18
20
22
24.2
27
30
33
36
39
43
47
51
56
68
75
Max
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.8
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
72
79
@ I
ZT
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
Zener Impedance
Z
ZT
@ I
ZT
W
100
100
100
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
150
170
180
200
240
255
Z
ZK
@ I
ZK
W
1000
1000
1000
1000
1000
1000
1000
800
500
200
100
160
160
160
160
160
160
80
80
80
80
80
100
100
120
300
300
300
500
500
500
500
500
500
500
500
mA
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Leakage Current
I
R
@ V
R
mA
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.2
0.1
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
Volts
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
7.0
8.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.2
25.2
27.3
30.1
32.9
35.7
39.2
47.6
52.5
QV
Z
(mV/k)
@ I
ZT
Min
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
52.2
65.6
73.4
Max
0
0
0
0
0
−2.5
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10
11
13
14
16
18
20
22
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
79.8
88.6
C
@ V
R
= 0
f = 1 MHz
pF
450
450
450
450
450
450
450
260
225
200
185
155
140
135
130
130
130
130
120
110
105
100
85
85
80
70
70
70
70
45
40
40
40
40
35
35
Device*
MM3Z2V4T1G
MM3Z2V7T1G
MM3Z3V0T1G
MM3Z3V3T1G
MM3Z3V6T1G
MM3Z3V9T1G
MM3Z4V3T1G
MM3Z4V7T1G
MM3Z5V1T1G
MM3Z5V6T1G
MM3Z6V2T1G
MM3Z6V8T1G
MM3Z7V5T1G
MM3Z8V2T1G
MM3Z9V1T1G
MM3Z10VT1G
MM3Z11VT1G
MM3Z12VT1G
MM3Z13VT1G
MM3Z15VT1G
MM3Z16VT1G
MM3Z18VT1G
MM3Z20VT1G
MM3Z22VT1G
MM3Z24VT1G
MM3Z27VT1G
MM3Z30VT1G
MM3Z33VT1G
MM3Z36VT1G
MM3Z39VT1G
MM3Z43VT1G
MM3Z47VT1G
MM3Z51VT1G
MM3Z56VT1G
MM3Z68VT1G
MM3Z75VT1G
*Include SZ-prefix devices where applicable.
2. Zener voltage is measured with a pulse test current I
Z
at an ambient temperature of 25°C.
http://onsemi.com
2
MM3ZxxxT1G Series, SZMM3ZxxxT1G Series
TYPICAL CHARACTERISTICS
1000
1000
IF, FORWARD CURRENT (mA)
Z ZT , DYNAMIC IMPEDANCE (
Ω
)
T
J
= 25°C
I
Z(AC)
= 0.1 I
Z(DC)
f = 1 kHz
100
100
I
Z
= 1 mA
10
5 mA
10
150°C
75°C
1.0
0.4
0.5
25°C
0°C
1.1
1.2
1.0
3.0
10
V
Z
, NOMINAL ZENER VOLTAGE
80
0.6
0.7
0.8
0.9
1.0
V
F
, FORWARD VOLTAGE (V)
Figure 1. Effect of Zener Voltage on Zener Impedance
Figure 2. Typical Forward Voltage
1000
IR, LEAKAGE CURRENT (
μ
A)
T
A
= 25°C
C, CAPACITANCE (pF)
0 V BIAS
1 V BIAS
1000
100
10
1.0
0.1
0.01
+ 25°C
−55°C
0
10
20
30
40
50
60
V
Z
, NOMINAL ZENER VOLTAGE (V)
70
+150°C
100
10
BIAS AT
50% OF V
Z
NOM
0.001
0.0001
1.0
4.0
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
70
0.00001
Figure 3. Typical Capacitance
Figure 4. Typical Leakage Current
100
I Z , ZENER CURRENT (mA)
T
A
= 25°C
100
IZ , ZENER CURRENT (mA)
T
A
= 25°C
10
10
1.0
1
0.1
0.1
0.01
0
2.0
4.0
6.0
8.0
V
Z
, ZENER VOLTAGE (V)
10
12
0.01
10
30
50
70
V
Z
, ZENER VOLTAGE (V)
90
Figure 5. Zener Voltage versus Zener Current
(V
Z
Up to 12 V)
Figure 6. Zener Voltage versus Zener Current
(12 V to 75 V)
http://onsemi.com
3
MM3ZxxxT1G Series, SZMM3ZxxxT1G Series
TYPICAL CHARACTERISTICS
100
80
POWER DISSIPATION (%)
60
40
20
0
0
25
50
75
100
TEMPERATURE (°C)
125
150
Figure 7. Steady State Power Derating
http://onsemi.com
4
MM3ZxxxT1G Series, SZMM3ZxxxT1G Series
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF
RADIUS.
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1
0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C
0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
H
E
2.30
2.50
2.70
STYLE 1:
PIN 1. CATHODE
2. ANODE
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
H
E
D
b
1
2
E
MIN
0.031
0.000
A3
A
C
L
A1
NOTE 3
NOTE 5
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
SCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
2008年7月9日, CombOLED 研究项目的工作重点是开发出高性价比的生产工艺，以实现有机发光二极管 (OLED) 的量产。欧司朗光电半导体公司固态照明部主管 Bernhard Stapp 表示：“该项目由欧盟提供资金支持，欧司朗负责协调运作，旨在为推行新型照明光源应用创造必要的条件。”这包括采用性价比卓越的方法构建新型元件架构，从而生产出大幅面透明光源。作为 LED 市场的创新推...[详细]
UHF和HF都是一般的技术分类，不过每一类都有独立的支持协议。HF在13.56MHz频段更具有一致性，虽然国际业内行业标准很多。UHF RFID在858-960MHz频段已商业化。同时也有多种国际标准支持，包括EPC global Gen 2。 标签与读写器通过无线链接交换数据。链接可以通过适合任何频段的、具有不同读取范围和抗干扰性的EMF或RF场实现。HF RFID技术主要通过电磁场传送信...[详细]
国产芯片交流
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
