MUN5212DW1,
NSBC124EDXV6,
NSBC124EDP6
Dual NPN Bias Resistor
Transistors
R1 = 22 kW, R2 = 22 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
(3)
R
1
Q
1
Q
2
R
2
(4)
(5)
R
1
(6)
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PIN CONNECTIONS
(2)
R
2
(1)
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable*
•
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C, common for Q
1
and Q
2
, unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
−
Continuous
Input Forward Voltage
Input Reverse Voltage
Symbol
V
CBO
V
CEO
I
C
V
IN(fwd)
V
IN(rev)
Max
50
50
100
40
10
Unit
Vdc
Vdc
mAdc
Vdc
Vdc
MARKING DIAGRAMS
6
SOT−363
CASE 419B−02
1
7B MG
G
SOT−563
CASE 463A
7B MG
1
SOT−963
CASE 527AD
RM
1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
7B/R
M
G
= Specific Device Code
= Date Code*
= Pb-Free Package
ORDERING INFORMATION
Device
MUN5212DW1T1G,
NSVMUN5212DW1T1G*
NSBC124EDXV6T1G
NSBC124EDXV6T5G
NSBC124EDP6T5G
Package
SOT−363
SOT−563
SOT−563
SOT−963
Shipping
†
3,000/Tape & Reel
4,000/Tape & Reel
8,000/Tape & Reel
8,000/Tape & Reel
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
June, 2017
−
Rev. 1
73
Publication Order Number:
DTC124ED/D
MUN5212DW1, NSBC124EDXV6, NSBC124EDP6
THERMAL CHARACTERISTICS
Characteristic
MUN5212DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
(Note 49)
T
A
= 25°C
(Note 50)
Derate above 25°C
(Note 49)
(Note 50)
Thermal Resistance,
Junction to Ambient
(Note 49)
(Note 50)
P
D
187
256
1.5
2.0
670
490
mW
mW/°C
°C/W
Symbol
Max
Unit
R
qJA
MUN5212DW1 (SOT−363) BOTH JUNCTION HEATED
(Note 51)
Total Device Dissipation
(Note 49)
T
A
= 25°C
(Note 50)
Derate above 25°C
(Note 49)
(Note 50)
Thermal Resistance,
Junction to Ambient
(Note 50)
Thermal Resistance,
Junction to Lead (Note 49)
(Note 50)
Junction and Storage Temperature Range
NSBC124EDXV6 (SOT−563) ONE JUNCTION HEATED
Total Device Dissipation
(Note 49)
T
A
= 25°C
Derate above 25°C
(Note 49)
Thermal Resistance,
Junction to Ambient
(Note 49)
P
D
357
2.9
350
mW
mW/°C
°C/W
(Note 49)
P
D
250
385
2.0
3.0
493
325
188
208
−55
to +150
mW
mW/°C
°C/W
R
qJA
R
qJL
°C/W
T
J
, T
stg
°C
R
qJA
NSBC124EDXV6 (SOT−563) BOTH JUNCTION HEATED
(Note 51)
Total Device Dissipation
(Note 49)
T
A
= 25°C
Derate above 25°C
(Note 49)
Thermal Resistance,
Junction to Ambient
(Note 49)
P
D
500
4.0
250
−55
to +150
mW
mW/°C
°C/W
°C
R
qJA
T
J
, T
stg
P
D
Junction and Storage Temperature Range
NSBC124EDP6 (SOT−963) ONE JUNCTION HEATED
Total Device Dissipation
(Note 52)
T
A
= 25°C
(Note 53)
Derate above 25°C
(Note 52)
(Note 53)
Thermal Resistance,
Junction to Ambient
(Note 53)
(Note 52)
231
269
1.9
2.2
540
464
MW
mW/°C
°C/W
R
qJA
NSBC124EDP6 (SOT−963) BOTH JUNCTION HEATED
(Note 51)
Total Device Dissipation
(Note 52)
T
A
= 25°C
(Note 53)
Derate above 25°C
(Note 52)
(Note 53)
Thermal Resistance,
Junction to Ambient
(Note 53)
(Note 52)
P
D
339
408
2.7
3.3
369
306
−55
to +150
MW
mW/°C
°C/W
R
qJA
Junction and Storage Temperature Range
49. FR−4 @ Minimum Pad.
50. FR−4 @ 1.0
×
1.0 Inch Pad.
51. Both junction heated values assume total power is sum of two equally powered channels.
52. FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
53. FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
T
J
, T
stg
°C
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74
MUN5212DW1, NSBC124EDXV6, NSBC124EDP6
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, common for Q
1
and Q
2
, unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
Collector-Base Breakdown Voltage
(I
C
= 10
mA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (Note 54)
(I
C
= 2.0 mA, I
B
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 54)
(I
C
= 5.0 mA, V
CE
= 10 V)
Collector-Emitter Saturation Voltage (Note 54)
(I
C
= 10 mA, I
B
= 0.3 mA)
Input Voltage (Off)
(V
CE
= 5.0 V, I
C
= 100
mA)
Input Voltage (On)
(V
CE
= 0.2 V, I
C
= 5.0 mA)
Output Voltage (On)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
Output Voltage (Off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
Input Resistor
Resistor Ratio
54. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle
≤
2%.
h
FE
V
CE(sat)
V
i(off)
V
i(on)
V
OL
V
OH
R1
R
1
/R
2
60
−
−
−
−
4.9
15.4
0.8
100
−
1.2
1.9
−
−
22
1.0
−
0.25
−
−
0.2
−
28.6
1.2
V
Vdc
Vdc
Vdc
Vdc
kW
I
CBO
I
CEO
I
EBO
V
(BR)CBO
V
(BR)CEO
−
−
−
50
50
−
−
−
−
−
100
500
0.2
−
−
nAdc
nAdc
mAdc
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
400
P
D
, POWER DISSIPATION (mW)
350
300
250
200
150
100
50
0
−50
−25
0
25
50
75
100
125
150
(1) (2) (3)
(1) SOT−363; 1.0
×
1.0 Inch Pad
(2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm
2
, 1 oz. Copper Trace
AMBIENT TEMPERATURE (°C)
Figure 130. Derating Curve
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75
MUN5212DW1, NSBC124EDXV6, NSBC124EDP6
TYPICAL CHARACTERISTICS
MUN5212DW1, NSBC124EDXV6
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
1
I
C
/I
B
= 10
T
A
=
−25°C
75°C
h
FE
, DC CURRENT GAIN
25°C
0.1
1000
25°C
V
CE
= 10 V
T
A
= 75°C
−25°C
100
0.01
0.001
10
0
20
I
C
, COLLECTOR CURRENT (mA)
40
50
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 131. V
CE(sat)
vs. I
C
3.2
C
ob
, OUTPUT CAPACITANCE (pF)
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
10
20
30
40
V
R
, REVERSE VOLTAGE (V)
50
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
I
C
, COLLECTOR CURRENT (mA)
100
Figure 132. DC Current Gain
75°C
10
1
25°C
T
A
=
−25°C
0.1
0.01
V
O
= 5 V
0
2
4
6
V
in
, INPUT VOLTAGE (V)
8
10
0.001
Figure 133. Output Capacitance
Figure 134. Output Current vs. Input Voltage
100
V
O
= 0.2 V
T
A
=
−25°C
V
in
, INPUT VOLTAGE (V)
10
25°C
1
75°C
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 135. Input Voltage vs. Output Current
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76
MUN5212DW1, NSBC124EDXV6, NSBC124EDP6
TYPICAL CHARACTERISTICS
NSBC124EDP6
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
1
1000
V
CE
= 10 V
h
FE
, DC CURRENT GAIN
25°C
150°C
−55°C
I
C
/I
B
= 10
100
25°C
0.1
150°C
10
−55°C
0.01
0
30
10
20
40
I
C
, COLLECTOR CURRENT (mA)
50
1
0.1
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 136. V
CE(sat)
vs. I
C
Figure 137. DC Current Gain
2.4
C
ob
, OUTPUT CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
2.0
1.6
1.2
0.8
0.4
0
0
10
20
30
40
V
R
, REVERSE VOLTAGE (V)
50
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
100
150°C
10
25°C
−55°C
1
0.1
V
O
= 5 V
0.01
0
2
4
6
8
10
12
V
in
, INPUT VOLTAGE (V)
14
16
Figure 138. Output Capacitance
Figure 139. Output Current vs. Input Voltage
100
V
in
, INPUT VOLTAGE (V)
10
−55°C
25°C
1
150°C
V
O
= 0.2 V
0.1
0
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
50
Figure 140. Input Voltage vs. Output Current
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77
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