IRF730
N-channel 400V - 0.75Ω - 5.5A TO-220
Powermesh™II Power MOSFET
General features
Type
IRF730
■
■
■
V
DSS
400V
R
DS(on)
<1Ω
I
D
5.5A
Exceptional dv/dt capability
100% avalanche tested
Low gate charge
1
2
3
Description
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout
refinements introduced greatly improve the
Ron*area figure of merit while keeping the device
at the leading edge for what concerns swithing
speed, gate charge and ruggedness.
TO-220
Internal schematic diagram
Applications
■
Switching application
Order codes
O
so
b
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IRF730
ro
P
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d
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t(
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b
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t(
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Part number
Marking
IRF730
Package
TO-220
Packaging
Tube
June 2006
Rev 4
1/12
www.st.com
12
Contents
IRF730
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
4
5
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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IRF730
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM (1)
P
TOT
dv/dt
(2)
T
stg
T
j
Absolute maximum ratings
Parameter
Drain-source voltage (V
GS
= 0)
Drain-gate voltage (R
GS
= 20 kΩ)
Gate- source voltage
Drain current (continuos) at T
C
= 25°C
Drain current (continuos) at T
C
= 100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
Peak diode recovery voltage slope
Storage temperature
Max. operating junction temperature
Value
400
400
± 20
5.5
3.5
22
100
0.8
3
–65 to 150
Unit
V
V
V
A
A
A
W
1. Pulse width limited by safe operating area
2. I
SD
≤
5.5A, di/dt
≤
90A/µs, V
DD
≤
V
(BR)DSS,
Tj
≤
T
jmax
.
Table 2.
Rthj-amb
Thermal data
Rthj-case Thermal resistance junction-case max
Thermal resistance junction-ambient max
Rthc-sink Thermal resistance case-sink typ
T
l
Maximum lead temperature for soldering
purpose
Table 3.
Symbol
bs
O
l
o
te
e
I
AR
ro
P
Avalanche characteristics
Parameter
Max Value
5.5
300
Unit
A
mJ
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d
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t(
b
-O
so
P
te
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od
r
150
1.25
62.5
0.5
300
s)
t(
uc
W/°C
V/ns
°C
°C
°C/W
°C/W
°C/W
°C
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
j
max)
Single pulse avalanche energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50V)
E
AS
3/12
Electrical characteristics
IRF730
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
V
(BR)DSS
On/off
Parameter
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
GS
= 0)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= max rating
V
DS
= max rating,
T
C
= 125 °C
V
GS
= ±20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 3 A
2
3
Min.
400
1
50
±100
4
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
I
DSS
I
GSS
V
GS(th)
R
DS(on)
0.75
Table 5.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Dynamic
Parameter
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Test conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 3 A
V
DS
= 25V, f = 1 MHz,
V
GS
= 0
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
bs
O
et
l
o
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
P
e
ro
uc
d
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t(
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te
le
Min.
2.9
od
r
s)
t(
uc
1
Max.
Typ.
Unit
S
530
90
15
pF
pF
pF
ns
ns
ns
ns
24
nC
nC
nC
V
DD
= 200V, I
D
= 3A
R
G
= 4.7Ω V
GS
= 10V
11
15
18
4
8.5
V
DD
= 320V, I
D
=5.5A,
V
GS
= 10V
4/12
IRF730
Electrical characteristics
Table 6.
Symbol
I
SD
I
SDM
(1)
Source drain diode
Parameter
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
I
SD
= 5.5A, V
GS
= 0
280
1.4
10
Test conditions
Min.
Typ.
Max.
6
24
1.6
Unit
A
A
V
ns
µC
A
V
SD (2)
t
rr
Q
rr
I
RRM
Reverse recovery time
I = 7A, di/dt = 100A/µs,
Reverse recovery charge
SD
V
DD
= 100V, T
j
= 150°C
Reverse recovery current
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
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