NTMD6P02, NVMD6P02
Power MOSFET
6 A, 20 V, P−Channel SOIC−8, Dual
Features
•
•
•
•
•
•
•
•
Ultra Low R
DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature Dual SOIC−8 Surface Mount Package
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
These Devices are Pb−Free and are RoHS Compliant
NVMD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
i.e.: Cellular and Cordless Telephones, and PCMCIA Cards
Rating
Symbol
V
DSS
V
GS
R
qJA
P
D
I
D
I
D
P
D
I
D
I
DM
R
qJA
P
D
I
D
I
D
P
D
I
D
I
DM
R
qJA
P
D
I
D
I
D
P
D
I
D
I
DM
T
J
, T
stg
E
AS
Value
−20
"12
62.5
2.0
−7.8
−5.7
0.5
−3.89
−40
98
1.28
−6.2
−4.6
0.3
−3.01
−35
166
0.75
−4.8
−3.5
0.2
−2.48
−30
−55
to
+150
500
http://onsemi.com
6 AMPERES, 20 VOLTS
P−Channel
D
Applications
•
Power Management in Portable and Battery−Powered Products,
G
Unit
V
V
°C/W
W
A
A
W
A
A
°C/W
W
A
A
W
A
A
°C/W
W
A
A
W
A
A
°C
mJ
8
1
SOIC−8
CASE 751
STYLE 11
S
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
−
Continuous
Thermal Resistance
−
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
Thermal Resistance
−
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
Thermal Resistance
−
Junction−to−Ambient (Note 3)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy
−
Starting T
J
= 25°C (V
DD
=
−20
Vdc,
V
GS
=
−5.0
Vdc, Peak I
L
=
−5.0
Apk,
L = 40 mH, R
G
= 25
W)
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 D1 D2 D2
8
E6P02x
AYWW
G
G
1
S1 G1 S2 G2
E6P02 = Specific Device Code
x
= Blank or S
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTMD6P02R2G
NTMD6P02R2SG
NVMD6P02R2G
Package
SOIC−8
(Pb−Free)
SOIC−8
(Pb−Free)
SOIC−8
(Pb−Free)
Shipping
†
2500 / Tape & Reel
2500 / Tape & Reel
2500 / Tape & Reel
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz. Cu 0.06″ thick single sided), t = 10 seconds.
2. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz. Cu 0.06″ thick single sided), t = steady state.
3. Minimum FR−4 or G−10 PCB, t = steady state.
4. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2%.
©
Semiconductor Components Industries, LLC, 2012
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
December, 2012
−
Rev. 4
1
Publication Order Number:
NTMD6P02R2/D
NTMD6P02, NVMD6P02
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)*
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
=
−250
mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
DS
=
−20
Vdc, V
GS
= 0 Vdc, T
J
= 25°C)
(V
DS
=
−20
Vdc, V
GS
= 0 Vdc, T
J
= 70°C)
Gate−Body Leakage Current
(V
GS
=
−12
Vdc, V
DS
= 0 Vdc)
Gate−Body Leakage Current
(V
GS
= +12 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
=
−250
mAdc)
Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance
(V
GS
=
−4.5
Vdc, I
D
=
−6.2
Adc)
(V
GS
=
−2.5
Vdc, I
D
=
−5.0
Adc)
(V
GS
=
−2.5
Vdc, I
D
=
−3.1
Adc)
Forward Transconductance (V
DS
=
−10
Vdc, I
D
=
−6.2
Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Notes 5 and 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
BODY−DRAIN DIODE RATINGS
(Note 5)
Diode Forward On−Voltage
Diode Forward On−Voltage
Reverse Recovery Time
(I
S
=
−1.7
Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms)
Reverse Recovery Stored Charge
5. Indicates Pulse Test: Pulse Width = 300
ms
max, Duty Cycle = 2%.
6. Switching characteristics are independent of operating junction temperature.
*Handling precautions to protect against electrostatic discharge are mandatory.
(I
S
=
−1.7
Adc, V
GS
= 0 Vdc)
(I
S
=
−1.7
Adc, V
GS
= 0 Vdc, T
J
= 125°C)
(I
S
=
−6.2
Adc, V
GS
= 0 Vdc)
(I
S
=
−6.2
Adc, V
GS
= 0 Vdc, T
J
= 125°C)
V
SD
V
SD
t
rr
t
a
t
r
Q
RR
−
−
−
−
−
−
−
−
−0.80
−0.65
−0.95
−0.80
50
20
30
0.04
−1.2
−
−
−
80
−
−
−
mC
Vdc
Vdc
ns
(V
DS
=
−16
Vdc,
V
GS
=
−4.5
Vdc,
I
D
=
−6.2
Adc)
(V
DD
=
−16
Vdc, I
D
=
−6.2
Adc,
V
GS
=
−4.5
Vdc,
R
G
= 6.0
W)
(V
DD
=
−10
Vdc, I
D
=
−1.0
Adc,
V
GS
=
−10
Vdc,
R
G
= 6.0
W)
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
tot
Q
gs
Q
gd
−
−
−
−
−
−
−
−
−
−
−
15
20
85
50
17
65
50
80
20
4.0
8.0
25
50
125
110
−
−
−
−
35
−
−
nC
ns
ns
(V
DS
=
−16
Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
C
oss
C
rss
−
−
−
1380
515
250
1700
775
450
pF
V
GS(th)
−0.6
−
−
−
−
−
−0.88
2.6
0.027
0.038
0.038
15
−1.20
−
0.033
0.050
−
−
Vdc
mV/°C
W
V
(BR)DSS
−20
−
−
−
−
−
−
−11.6
−
−
−
−
−
−
−1.0
−5.0
−100
100
Vdc
mV/°C
mAdc
Symbol
Min
Typ
Max
Unit
I
DSS
I
GSS
I
GSS
nAdc
nAdc
R
DS(on)
g
FS
Mhos
http://onsemi.com
2
NTMD6P02, NVMD6P02
12
−I
D, DRAIN CURRENT (AMPS)
10
8.0
6.0
4.0
2.0
0
0
−1.5
V
V
GS
=
−1.3
V
0.25
0.50
0.75
1.00
1.25
1.50
1.75
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−10
V
−4.5
V
−3.8
V
−2.1
V
−I
D, DRAIN CURRENT (AMPS)
T
J
= 25°C
−3.1
V
−2.5
V
−1.8
V
10
V
DS
≥
−10
V
8.0
6.0
4.0
100°C
2.0
0
25°C
T
J
=
−55°C
0
1.0
1.5
2.0
2.5
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.05
0.04
0.03
0.02
0.01
0
I
D
=
−6.2
A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.05
Figure 2. Transfer Characteristics
T
J
= 25°C
0.04
V
GS
=
−2.5
V
−2.7
V
0.03
−4.5
V
0.02
0
2.0
4.0
6.0
8.0
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
10
0.01
0
2.0
8.0
10
4.0
6.0
−I
D
, DRAIN CURRENT (AMPS)
12
14
Figure 3. On−Resistance versus
Gate−To−Source Voltage
Figure 4. On-Resistance versus Drain Current
and Gate Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1.6
1.4
1.2
1
0.8
0.6
−50
I
D
=
−6.2
A
V
GS
=
−4.5
V
1000
100
V
GS
= 0 V
T
J
= 125°C
100°C
−I
DSS , LEAKAGE (nA)
10
1
25°C
0.1
0.01
−25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
150
4
8
12
16
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
20
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−To−Source Leakage Current
versus Voltage
http://onsemi.com
3
NTMD6P02, NVMD6P02
VGS , GATE−TO−SOURCE VOLTAGE (VOLTS)
V
DS
= 0 V
C
iss
V
GS
= 0 V
QT
V
DS
Q1
Q2
V DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
5000
4500
C, CAPACITANCE (pF)
4000
3500
3000
2500
2000
1500
1000
500
0
10
5.0
C
rss
0
−V
GS
−V
DS
5.0
10
C
iss
C
oss
15
20
C
rss
5
4
3
2
1
0
I
D
=
−6.2
A
V
DS
=
−16
V
V
GS
=
−4.5
V
T
J
= 25°C
0
5.0
10
15
20
25
20
16
V
GS
12
8
4
0
T
J
= 25°C
Q
g
, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
V
DD
=
−16
V
I
D
=
−1.0
A
V
GS
=
−10
V
t, TIME (ns)
t
d(off)
t, TIME (ns)
t
f
100
t
r
t
d(on)
10
1
10
R
G
, GATE RESISTANCE (OHMS)
100
Figure 8. Gate−To−Source
and Drain−To−Source Voltage versus Total Charge
1000
V
DD
=
−16
V
I
D
=
−6.2
A
V
GS
=
−4.5
V
100
t
f
t
r
t
d(off)
t
d(on)
10
1
10
R
G
, GATE RESISTANCE (OHMS)
100
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
5
−I
S, SOURCE CURRENT (AMPS)
−I
D , DRAIN CURRENT (AMPS)
4
3
2
1
0
V
GS
= 0 V
T
J
= 25°C
100
V
GS
= 2.5 V
SINGLE PULSE
T
C
= 25°C
1.0 ms
10
10 ms
1
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
dc
100
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Diode Forward Voltage versus Current
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
4
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
