IRG7PH46UDPbF
IRG7PH46UD-EP
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
•
•
•
•
•
•
•
•
Low V
CE (ON)
trench IGBT technology
Low switching losses
Square RBSOA
100% of the parts tested for I
LM
Positive V
CE (ON)
temperature co-efficient
Ultra fast soft recovery co-pak diode
Tight parameter distribution
Lead-Free
C
V
CES
= 1200V
I
NOMINAL
= 40A
G
E
T
J(max)
= 150°C
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low V
CE (ON)
and low switching losses
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
n-channel
C
V
CE(on)
typ. = 1.7V
C
Applications
•
•
•
•
U.P.S.
Welding
Solar Inverter
Induction Heating
GC
E
TO-247AC
IRG7PH46UDPbF
E
GC
TO-247AD
IRG7PH46UD-EP
G
Gate
Parameter
C
Collector
Max.
1200
108
57
40
160
160
108
57
160
±30
390
156
-55 to +150
E
Emitter
Units
V
Absolute Maximum Ratings
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
NOMINAL
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
ST G
Collector-to-Emitter Voltage
Continuous Collector Current (Silicon Limited)
Continuous Collector Current (Silicon Limited)
Nominal Current
Pulse Collector Current, V
GE
= 20V
Clamped Inductive Load Current, V
GE
= 20V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
c
A
d
Continuous Gate-to-Emitter Voltage
V
W
°C
Thermal Resistance
R
JC
(IGBT)
R
JC
(Diode)
R
CS
R
JA
f
Thermal Resistance Junction-to-Case-(each Diode)
f
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.32
0.66
–––
–––
Units
°C/W
1
www.irf.com
© 2013 International Rectifier
July 17, 2013
IRG7PH46UDPbF/IRG7PH46UD-EP
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
V
(BR)CES
/T
J
Min.
1200
—
—
—
3.0
—
—
—
—
—
—
—
Typ.
—
1.2
1.7
2.0
—
-13
50
1.5
2.0
3.1
3.0
—
Max. Units
—
—
2.0
—
6.0
—
—
100
—
4.8
—
±200
nA
V
Conditions
V
GE
= 0V, I
C
= 100μA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
e
V
CE(on)
V
GE(th)
V
GE(th)
/TJ
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
V/°C V
GE
= 0V, I
C
= 1.0mA (25°C-150°C)
I
C
= 40A, V
GE
= 15V, T
J
= 25°C
V
V
I
C
= 40A, V
GE
= 15V, T
J
= 150°C
V
CE
= V
GE
, I
C
= 1.6mA
gfe
I
CES
V
FM
I
GES
mV/°C V
CE
= V
GE
, I
C
= 1.6mA (25°C - 150°C)
V
CE
= 50V, I
C
= 40A, PW = 20μs
S
μA
mA
V
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
I
F
= 40A
I
F
= 40A, T
J
= 150°C
V
GE
= ±30V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
Erec
t
rr
I
rr
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
220
30
85
2610
1845
4455
45
40
410
45
3790
2905
6695
40
40
480
200
4820
150
110
Max. Units
320
50
130
3515
2725
6240
60
60
450
60
—
—
—
—
—
—
—
—
—
—
pF
ns
μJ
ns
μJ
nC
I
C
= 40A
d
Conditions
V
GE
= 15V
V
CC
= 600V
I
C
= 40A, V
CC
= 600V, V
GE
= 15V
R
G
= 10, L = 200μH,T
J
= 25°C
g
Energy losses include tail & diode reverse recovery
I
C
= 40A, V
CC
= 600V, V
GE
=15V
R
G
=10, L=200μH, T
J
= 150°C
g
Energy losses include tail & diode reverse recovery
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
T
J
= 150°C, I
C
= 160A
V
CC
= 960V, Vp
1200V
Rg = 10, V
GE
= +20V to 0V
FULL SQUARE
—
—
—
1130
140
40
—
—
—
μJ
ns
A
T
J
= 150°C
V
CC
= 600V, I
F
= 40A
Rg = 10, L =1.0mH
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 200μH, R
G
= 10.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
is measured at
T
J
of approximately 90°C.
Values influenced by parasitic L and C of the test circuit.
2
www.irf.com
© 2013 International Rectifier
July 17, 2013
IRG7PH46UDPbF/IRG7PH46UD-EP
100
Duty cycle : 50%
Tj = 150°C
Tc = 100°C
Vcc = 600V
Gate drive as specified
Power Dissipation = 154W
80
Load Current ( A )
Square Wave:
60
V
CC
40
I
20
Diode as specified
0
0.1
1
f , Frequency ( kHz )
10
100
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
120
100
80
60
40
20
0
25
50
75
100
125
150
Ptot (W)
400
350
300
250
200
150
100
50
0
25
50
75
100
125
150
T C (°C)
IC (A)
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
1000
T C (°C)
Fig. 2
- Power Dissipation vs. Case
Temperature
1000
100
10μsec
100
IC (A)
IC (A)
10
DC
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
VCE (V)
1000
10000
100μsec
1msec
10
1
10
100
VCE (V)
1000
10000
Fig. 3
- Forward SOA
T
C
= 25°C, T
J
150°C; V
GE
=15V
3
www.irf.com
© 2013 International Rectifier
Fig. 4
- Reverse Bias SOA
T
J
= 150°C; V
GE
= 20V
July 17, 2013
IRG7PH46UDPbF/IRG7PH46UD-EP
160
140
120
100
ICE (A)
160
140
120
80
60
40
20
0
0
2
4
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
100
ICE (A)
80
60
40
20
0
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
6
8
10
0
2
4
6
8
10
VCE (V)
VCE (V)
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 30μs
160
140
120
100
VGE = 18V
VGE = 15V
VGE = 12V
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 30μs
160
140
120
100
-40°C
25°C
150°C
ICE (A)
80
60
40
20
0
0
2
4
6
IF (A)
10
80
60
40
20
0
VGE = 10V
VGE = 8.0V
8
0.0
1.0
2.0
3.0
VF (V)
4.0
5.0
6.0
VCE (V)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 150°C; tp = 30μs
12
10
8
VCE (V)
Fig. 8
- Typ. Diode Forward Characteristics
tp = 30μs
12
10
8
VCE (V)
6
4
2
0
4
8
ICE = 20A
ICE = 40A
ICE = 80A
6
4
2
0
ICE = 20A
ICE = 40A
ICE = 80A
12
VGE (V)
16
20
4
8
12
VGE (V)
16
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
4
www.irf.com
© 2013 International Rectifier
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
July 17, 2013
IRG7PH46UDPbF/IRG7PH46UD-EP
12
ICE, Collector-to-Emitter Current (A)
120
100
80
60
40
20
0
T J = 25°C
10
8
VCE (V)
6
4
2
0
4
8
ICE = 20A
ICE = 40A
ICE = 80A
T J = 150°C
12
VGE (V)
16
20
4
5
6
7
8
9
VGE, Gate-to-Emitter Voltage (V)
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 150°C
9000
8000
7000
6000
Energy (μJ)
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V
1000
tdOFF
Swiching Time (ns)
5000
4000
3000
2000
1000
0
0
10
20
30
EON
tF
100
tdON
EOFF
tR
10
40
IC (A)
50
60
70
80
0
10
20
30
40
IC (A)
50
60
70
80
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 150°C; L = 200μH; V
CE
= 600V, R
G
= 10; V
GE
= 15V
10000
9000
8000
Energy (μJ)
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 150°C; L = 200μH; V
CE
= 600V, R
G
= 10; V
GE
= 15V
10000
EOFF
Swiching Time (ns)
1000
tdOFF
7000
6000
5000
4000
3000
2000
0
20
40
60
80
100
RG (
)
EON
tF
100
tdON
tR
10
0
20
40
60
80
100
RG ()
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 150°C; L = 200μH; V
CE
= 600V, I
CE
= 40A; V
GE
= 15V
5
www.irf.com
© 2013 International Rectifier
Fig. 16
- Typ. Switching Time vs. R
G
T
J
= 150°C; L = 200μH; V
CE
= 600V, I
CE
= 40A; V
GE
= 15V
July 17, 2013
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
