NTMFS4C35N
Power MOSFET
Features
30 V, 80 A, Single N−Channel, SO−8 FL
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V
(BR)DSS
30 V
R
DS(ON)
MAX
3.2 mW @ 10 V
4.0 mW @ 4.5 V
D (5−8)
I
D
MAX
80 A
Applications
•
CPU Power Delivery
•
DC−DC Converters
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJA
≤
10 s
(Note 1)
Power Dissipation
R
qJA
≤
10 s (Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain
Current
Steady
State
T
A
= 25°C
T
A
= 80°C
T
A
= 25°C
T
A
= 25°C
T
A
= 80°C
T
A
= 25°C
T
A
= 25°C
T
A
= 80°C
T
A
= 25°C
T
C
= 25°C
T
C
=80°C
T
C
= 25°C
T
A
= 25°C, t
p
= 10
ms
T
A
= 25°C
P
D
I
DM
I
Dmax
T
J
,
T
STG
I
S
dV/d
t
E
AS
T
L
P
D
I
D
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
30
±20
22.5
16.8
2.59
36
27
6.65
12.4
9.3
0.78
80
60
33
180
80
−55
to
+150
30
7.0
115
W
A
A
°C
A
V/ns
mJ
W
A
W
W
A
Unit
V
V
A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1
A
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
D
4C35N
AYWZZ
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceabililty
ORDERING INFORMATION
Device
NTMFS4C35NT1G
NTMFS4C35NT3G
Package
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
Shipping
†
1500 /
Tape & Reel
5000 /
Tape & Reel
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
GS
= 10 V, I
L
= 48 A
pk
,
L = 0.1 mH, R
GS
= 25
W)
(Note 3)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at T
J
= 25°C,
V
GS
= 10 V, I
L
= 29 A, E
AS
= 42 mJ.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2014
February, 2014
−
Rev. 1
1
Publication Order Number:
NTMFS4C35N/D
NTMFS4C35N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – Steady State (Note 5)
Junction−to−Ambient – (t
≤
10 s) (Note 4)
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
R
qJC
R
qJA
R
qJA
R
qJA
Value
3.8
48.3
159.3
18.8
°C/W
Unit
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
(transient)
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSSt
V
(BR)DSS
/
T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
R
G
C
ISS
C
OSS
C
RSS
C
RSS
/C
ISS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
Q
G(TOT)
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
V
GS
= 10 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 0 V, V
DS
= 15 V, f = 1 MHz
V
GS
= 0 V, f = 1 MHz, V
DS
= 15 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
Gate Resistance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Capacitance Ratio
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Plateau Voltage
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
12.6
33
21.4
6.7
ns
2300
1097
46
0.02
15
3.3
6.5
5.5
3.1
32.5
V
nC
nC
pF
T
A
= 25°C
I
D
= 30 A
I
D
= 30 A
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
V
GS
= 0 V, I
D(aval)
= 13.2 A,
T
case
= 25°C, t
transient
= 100 ns
30
34
12
1.0
10
±100
V
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 6)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
1.3
5.0
2.56
3.4
50
1.0
2.2
V
mV/°C
3.2
4.0
mW
S
W
V
DS
= 1.5 V, I
D
= 15 A
6. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
7. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4C35N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
SWITCHING CHARACTERISTICS
(Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 30 A
V
GS
= 0 V,
I
S
= 10 A
T
J
= 25°C
T
J
= 125°C
0.8
0.62
41
21
20
30
nC
ns
1.1
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
8.7
26
28
4.4
ns
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
6. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
7. Switching characteristics are independent of operating junction temperatures.
TYPICAL CHARACTERISTICS
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
3.8 V
−
10 V
V
GS
= 3.6 V
3.4 V
3.2 V
T
J
= 25°C
3.0 V
2.8 V
2.6 V
2.4 V
0
0.5
1.0
1.5
2.0
2.5
3.0
I
D
, DRAIN CURRENT (A)
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
V
DS
= 3 V
I
D
, DRAIN CURRENT (A)
T
J
= 125°C
T
J
= 25°C
T
J
=
−55°C
2.5
3.0
3.5
4.0
1.0
1.5
2.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
3
4
5
6
7
8
9
10
T
J
= 25°C
I
D
= 30 A
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 10 V
10
20
30
40
50
60
70
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. V
GS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
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3
NTMFS4C35N
TYPICAL CHARACTERISTICS
1.7
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
−50
V
GS
= 10 V
I
D
= 30 A
I
DSS
, LEAKAGE (nA)
10,000
100,000
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
1000
T
J
= 85°C
100
−25
0
25
50
75
100
125
150
10
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
2800
2400
C, CAPACITANCE (pF)
2000
1600
1200
800
400
0
0
5
C
rss
10
15
20
25
30
C
oss
T
J
= 25°C
V
GS
= 0 V
C
iss
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
10
8
6
4
2
0
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
Q
T
Q
gs
Q
gd
T
J
= 25°C
V
GS
= 10 V
V
DD
= 15 V
I
D
= 30 A
0
4
8
12
16
20
24
28
32
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
t, TIME (ns)
100
t
d(off)
t
f
t
r
t
d(on)
10
20
18
16
14
12
10
8
6
4
2
0
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 125°C
T
J
= 25°C
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.4
0.5
0.6
0.7
0.8
0.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
NTMFS4C35N
TYPICAL CHARACTERISTICS
Single Pulse Response
0 V < V
GS
< 10 V
100 T
A
= 25°C
10
1
0.1
0.01
R
DS(on)
Limit
Thermal Limit
Package Limit
0.01
0.1
1
10
dc
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1000
45
40
35
30
25
20
15
10
5
0
25
50
75
100
125
150
I
D
= 29 A
I
D
, DRAIN CURRENT (A)
10
ms
100
ms
1 ms
10 ms
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
140
120
100
G
FS
(S)
80
60
40
20
0
0
25
50
75
I
D
(A)
100
125
150
1
V
DS
= 1.5 V
I
D
, DRAIN CURRENT (A)
100
Figure 12. Maximum Avalanche Energy vs.
Stating Junction Temperature
10
1.E−08
1.E−07
1.E−06
1.E−05
1.E−04
1.E−03
PULSE WIDTH (sec)
Figure 13. G
FS
vs. I
D
100
50% Duty Cycle
10
R(t) (°C/W)
20%
10%
5%
2%
1%
Figure 14. Avalanche Characteristics
1
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 15. Thermal Response
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