IXYS
Dual Diode Modules
Absolute Maximum Ratings
V
RRM
V
DRM
[V]
1200
1400
1600
1800
2000
2200
Date: 26.11.2004
Data Sheet Issue: 3
MD
#
600
MDD
600-12N1
600-14N1
600-16N1
600-18N1
600-20N1
600-22N1
MDA
600-12N1
600-14N1
600-16N1
600-18N1
600-20N1
600-22N1
MDK
600-12N1
600-14N1
600-16N1
600-18N1
600-20N1
600-22N1
VOLTAGE RATINGS
V
RRM
V
RSM
Repetitive peak reverse voltage
1)
1)
MAXIMUM
LIMITS
1200-2200
1300-2300
UNITS
V
V
Non-repetitive peak reverse voltage
OTHER RATINGS
I
F(AV)M
I
F(AV)M
I
F(AV)M
I
F(RMS)
I
F(d.c.)
I
TSM
I
TSM2
It
It
V
isol
T
j op
T
j max
T
stg
Notes:
1)
2)
3)
4)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
Single phase; 50 Hz, 180° half-sinewave.
Half-sinewave, 150°C T
j
initial.
AC RMS voltage, 50 Hz, 1min test.
2
2
MAXIMUM
LIMITS
2)
UNITS
A
A
A
A
A
kA
kA
Maximum average forward current. T
case
= 111°C
Maximum average forward current. T
case
= 85°C
Nominal RMS forward current. T
case
= 55°C
D.C. forward current. T
case
= 55°C
2
600
883
726
1818
1158
3)
2)
2)
Maximum average forward current. T
case
= 100°C
Peak non-repetitive surge t
p
= 10 ms, V
RM
= 60%V
RRM
Peak non-repetitive surge t
p
= 10 ms, V
RM
≤
10 V
I t capacity for fusing t
p
= 10 ms, V
RM
= 60%V
RRM
I t capacity for fusing t
p
= 10 ms, V
RM
≤
10 V
Isolation Voltage
4)
2
3)
2
3)
3)
21.8
24.0
2.38×10
2.88×10
3500
-40 to +125
+150
-40 to +125
6
6
As
As
V
°C
°C
°C
2
2
Operating temperature range
Maximum junction temperature
Storage temperature range
Data Sheet. MD#600-12N1 to 22N1 Issue 3
Page 1 of 9
November, 2004
IXYS
Characteristics
PARAMETER
V
FM
V
FM
V
T0
r
T
I
RRM
Q
rr
Q
ra
I
rm
t
rr
R
thJC
Maximum peak forward voltage
Maximum peak forward voltage
Threshold voltage
Slope resistance
Peak reverse current
Recovered Charge
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
Thermal resistance, junction to case
Dual Diode Module Types MD#600-12N1 to MD#600-22N1
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
4.25
10.2
-
TYP.
-
-
-
-
-
1800
1500
165
18
-
-
-
-
-
-
1.2
MAX.
1.15
0.88
0.75
0.2
50
-
1750
-
-
0.062
0.031
0.02
0.01
5.75
13.8
-
TEST CONDITIONS
I
FM
= 1800 A
I
FM
= 500 A
1)
UNITS
V
V
mΩ
Rated V
RRM
mA
µC
I
FM
= 1000 A, t
p
= 1 ms,
di/dt = 10 A/µs, V
r
= 50 V
µC
A
µs
K/W
K/W
K/W
K/W
Nm
Single Diode
Whole Module
Single Diode
Whole Module
2)
R
thCK
Thermal resistance, case to heatsink
F
1
F
2
W
t
Notes:
1) Unless otherwise indicated T
j
= 150°C
2) Screws must be lubricated
Mounting force (to heatsink)
Mounting force (to terminals)
Weight
Nm
kg
Data Sheet. MD#600-12N1 to 22N1 Issue 3
Page 2 of 9
November, 2004
IXYS
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
12
14
16
18
20
22
V
RRM
V
1200
1400
1600
1800
2000
2200
Dual Diode Module Types MD#600-12N1 to MD#600-22N1
V
RSM
V
1300
1500
1700
1900
2100
2300
V
R
DC V
820
930
1040
1150
1260
1370
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
j
below 25°C.
4.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
5.0 Computer Modelling Parameters
5.1 Device Dissipation Calculations
I
AV
−
V
T
0
+
V
T
0
+
4
⋅
ff
⋅
r
T
⋅
W
AV
=
2
⋅
ff
2
⋅
r
T
2
2
W
AV
=
and:
∆
T
R
th
∆
T
=
T
j
max
−
T
K
Where V
T0
=0.75V, r
T
=0.2mΩ,
R
th
= Supplementary thermal impedance, see table below and
ff
= Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle
Square wave
Sine wave
30°
0.07067
0.06767
60°
0.06791
0.06536
90°
0.06629
0.06408
120°
0.06525
0.0633
180°
0.06395
0.062
270°
0.06277
d.c.
0.062
Form Factors
Conduction Angle
Square wave
Sine wave
30°
3.464
3.98
60°
2.449
2.778
90°
2
2.22
120°
1.732
1.879
180°
1.414
1.57
270°
1.149
d.c.
1
Data Sheet. MD#600-12N1 to 22N1 Issue 3
Page 3 of 9
November, 2004
IXYS
5.2 Calculating V
F
using ABCD Coefficients
Dual Diode Module Types MD#600-12N1 to MD#600-22N1
The on-state characteristic I
F
vs. V
F
, on page 6 is represented in two ways;
(i) the well established V
T0
and r
T
tangent used for rating purposes and
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V
F
in
terms of I
F
given below:
V
F
=
A
+
B
⋅
ln
(
I
F
)
+
C
⋅
I
F
+
D
⋅
I
F
The constants, derived by curve fitting software, are given below for both hot and cold characteristics.
The resulting values for V
F
agree with the true device characteristic over a current range, which is
limited to that plotted.
25°C Coefficients
A
B
C
D
0.46164273
0.1048225
1.6116×10
-4
-3
150°C Coefficients
A
B
C
D
0.435837127
0.06435749
1.84243×10
-4
-3
-7.48063×10
-2.353947×10
Data Sheet. MD#600-12N1 to 22N1 Issue 3
Page 4 of 9
November, 2004
IXYS
5.3 D.C. Thermal Impedance Calculation
p
=
n
Dual Diode Module Types MD#600-12N1 to MD#600-22N1
−
t
τ
r
t
=
∑
r
p
⋅
1
−
e
p
p
=
1
Where
p = 1
to
n, n
is the number of terms in the series and:
t = Duration of heating pulse in seconds.
r
t
= Thermal resistance at time t.
r
p
= Amplitude of p
th
term.
τ
p
= Time Constant of r
th
term.
The coefficients for this device are shown in the tables below:
D.C.
Term
1
0.05428
2.69428
2
4.4894×10
0.126017
-3
3
2.3382×10
0.013878
-3
4
0.8759×10
1.435×10
-3
-3
r
p
τ
p
6.0 Reverse recovery ratings
(i) Q
ra
is based on 50% I
RM
chord as shown in Fig. 1
Fig. 1
(ii) Q
rr
is based on a 150
µs
integration time i.e.
150
µ
s
Q
rr
=
(iii)
∫
i
0
rr
.
dt
t
1
K Factor
=
t
2
Data Sheet. MD#600-12N1 to 22N1 Issue 3
Page 5 of 9
November, 2004
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