NTST20100CTG,
NTSB20100CT-1G,
NTSJ20100CTG,
NTSB20100CTG
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Exceptionally Low V
F
= 0.50 V at I
F
= 5 A
Features
1
2, 4
3
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PIN CONNECTIONS
•
Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
These are Pb−Free Devices
4
4
1
2
3
TO−220AB
CASE 221A
STYLE 6
12
3
I2PAK
CASE 418D
STYLE 3
Typical Applications
•
Switching Power Supplies including Notebook / Netbook Adapters,
•
•
•
•
ATX and Flat Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
1
2
3
4
TO−220FP
CASE 221AH
D2PAK
CASE 418B
Mechanical Characteristics
•
Case: Epoxy, Molded
•
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
•
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•
Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2016
1
July, 2016 − Rev. 7
Publication Order Number:
NTST20100CT/D
NTST20100CTG, NTSB20100CT−1G, NTSJ20100CTG, NTSB20100CTG
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
R
, T
C
= 130°C)
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz, T
C
= 125°C)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature
Storage Temperature
Voltage Rate of Change (Rated V
R
)
Per device
Per diode
I
FRM
Per device
Per diode
I
FSM
T
J
T
stg
dv/dt
40
20
150
−40 to +150
−40 to +150
10,000
A
°C
°C
V/ms
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
20
10
A
Value
100
Unit
V
A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Maximum Thermal Resistance per Diode
Junction−to−Case
Junction−to−Ambient
Symbol
R
qJC
R
qJA
NTST20100CTG,
NTSB20100CT−1G
2.5
70
NTSB20100CTG
1.5
46.9
NTSJ20100CTG
4.49
105
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(Per Leg unless otherwise noted)
Rating
Maximum Instantaneous Forward Voltage (Note 1)
(I
F
= 5 A, T
J
= 25°C)
(I
F
= 10 A, T
J
= 25°C)
(I
F
= 5 A, T
J
= 125°C)
(I
F
= 10 A, T
J
= 125°C)
Maximum Instantaneous Reverse Current (Note 1)
(V
R
= 70 V, T
J
= 25°C)
(V
R
= 70 V, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
I
R
17
5.3
−
12
−
−
800
25
Symbol
v
F
0.55
0.65
0.50
0.58
−
0.83
−
0.68
mA
mA
mA
mA
Typ
Max
Unit
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
v
2.0%
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2
NTST20100CTG, NTSB20100CT−1G, NTSJ20100CTG, NTSB20100CTG
TYPICAL CHARACTERISITICS
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
100
T
A
= 150°C
I R , REVERSE CURRENT (mA)
T
A
= 25°C
10
T
A
= 125°C
100
T
A
= 150°C
T
A
= 125°C
10
1.0
0.1
T
A
= 25°C
1.0
0.01
0.1
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
v
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
20
30
50
70
40
60
80
V
R
, REVERSE VOLTAGE (VOLTS)
90
100
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
10000
C
J
, JUNCTION CAPACITANCE (pF)
T
J
= 25°C
20
R
qJC
= 1.3°C/W
dc
15
1000
10
SQUARE WAVE
100
5
10
0.1
0
0
20
40
60
80
100
120
T
C
, CASE TEMPERATURE (°C)
140
1
10
V
R
, REVERSE VOLTAGE (VOLTS)
100
Figure 3. Typical Junction Capacitance
Figure 4. Current Derating per Leg
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
40
35
dc
30
25
20
15
10
5
0
0
20
40
60
80
100
120
T
C
, CASE TEMPERATURE (°C)
140
SQUARE WAVE
R
qJC
= 1.3°C/W
P
F(AV)
, AVERAGE FORWARD POW-
ER DISSIPATION (W)
20
18
16
14
12
10
8
6
4
2
0
0
4
8
12
16
T
A
= 150°C
20
24
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
I
PK
/I
AV
= 20
SQUARE
WAVE
I
PK
/I
AV
= 10
I
PK
/I
AV
= 5
dc
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
NTST20100CTG, NTSB20100CT−1G, NTSJ20100CTG, NTSB20100CTG
TYPICAL CHARACTERISITICS
10
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
1
50% Duty Cycle
20%
10%
0.1 5%
2%
1%
0.0001
0.001
0.01
0.1
t, Pulse Time (sec)
1
10
100
1000
Single Pulse
0.01
0.000001
0.00001
Figure 7. Typical Transient Thermal Response, Junction−to−Case for NTST20100CT and NTSB20100CT−1G
10
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
50% Duty Cycle
1
20%
10%
5%
2%
1%
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, Pulse Time (sec)
Figure 8. Typical Transient Thermal Response, Junction−to−Case for NTSJ20100CTG
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
1
50% Duty Cycle
20%
0.1
10%
5%
2%
1%
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
t, Pulse Time (sec)
1
10
100
1000
0.01
0.000001
Figure 9. Typical Transient Thermal Response for NTSB20100CTG
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4
NTST20100CTG, NTSB20100CT−1G, NTSJ20100CTG, NTSB20100CTG
ORDERING INFORMATION
Device
NTST20100CTG
NTSB20100CT−1G
NTSJ20100CTG
NTSB20100CTG
NTSB20100CTT4G
Package
TO−220AB
(Pb−Free)
I
2
PAK
(Pb−Free)
TO−220FP
(Halide−Free)
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
800 / Tape & Reel
MARKING DIAGRAMS
AYWW
TS2100Cx
AKA
AYWW
TS20100CG
AKA
AYWW
TS20100CG
AKA
AYWW
TS20100CG
AKA
TO−220AB
TO−220FP
A
Y
WW
AKA
x
G
H
I
2
PAK
= Assembly Location
= Year
= Work Week
= Polarity Designator
= G or H
= Pb−Free Package
= Halide−Free Package
D
2
PAK
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5
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