NTMFS4847N
Power MOSFET
Features
30 V, 85 A, Single N−Channel, SO−8FL
•
•
•
•
•
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Thermally Enhanced SO−8 Package
These are Pb−Free Devices
Refer to Application Note AND8195/D
CPU Power Delivery
DC−DC Converters
Low Side Switching
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJA
v
10 sec
Power Dissipation
R
qJA,
t
v
10 sec
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain
Current
t
p
=10ms
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C
T
A
= 25°C
P
D
I
DM
I
Dmaxpkg
T
J
,
T
STG
I
S
dV/dt
EAS
P
D
I
D
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
30
±16
18
13
2.21
29.5
21
5.8
11.5
8.2
0.88
85
61
48.1
170
100
−55
to
+150
48
6
163
W
A
W
A
W
A
1
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Applications
V
(BR)DSS
30 V
R
DS(ON)
MAX
4.1 mW @ 10 V
6.2 mW @ 4.5 V
I
D
MAX
85 A
D (5,6)
Unit
V
V
A
S (1,2,3)
W
A
N−CHANNEL MOSFET
G (4)
MARKING
DIAGRAM
D
S
S
S
G
4847N
AYWZZ
D
D
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A
Y
W
ZZ
D
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
A
°C
A
V/ns
mJ
NTMFS4847NT3G
Device
NTMFS4847NT1G
Package
SO−8FL
(Pb−Free)
SO−8FL
(Pb−Free)
Shipping
†
1500 /
Tape & Reel
5000 /
Tape & Reel
Current limited by package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 V, V
GS
= 10 V,
I
L
= 33 A
pk
, L = 0.3 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
©
Semiconductor Components Industries, LLC, 2012
May, 2012
−
Rev. 3
1
Publication Order Number:
NTMFS4847N/D
NTMFS4847N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
Junction−to−Ambient
−
t
v
10 sec
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
R
qJC
R
qJA
R
qJA
R
qJA
Value
2.6
56.6
142
21.6
°C/W
Unit
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= 10 V to
11.5 V
V
GS
= 4.5 V
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 15 A,
R
G
= 3.0
W
17.7
53
21
8.7
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 12 V
2614
466
241
19.2
1.6
7.3
6.1
43.8
nC
28
nC
pF
g
FS
I
D
= 30 A
I
D
= 15 A
I
D
= 30 A
I
D
= 15 A
V
DS
= 1.5 V, I
D
= 30 A
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25
°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
30
25
1
10
±100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±16
V
V
GS
= V
DS
, I
D
= 250
mA
1.45
1.8
5.2
3.2
3.2
5.0
5.0
74
2.5
V
mV/°C
4.1
mW
6.2
S
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4847N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
t
RR
t
a
t
b
Q
RR
L
S
L
D
L
G
R
G
T
A
= 25°C
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 30 A
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C
T
J
= 125°C
0.8
0.7
15.4
8.2
7.2
6.0
nC
ns
1.0
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
10.5
20.8
28.1
6.5
ns
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
0.93
0.005
1.84
0.9
nH
W
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
TYPICAL CHARACTERISTICS
110
100
I
D
, DRAIN CURRENT (A)
90
80
70
60
50
40
30
20
10
0
0
1
2
3
4
5
120
110
3.8 V
3.6 V
4.0 V
3.4 V
3.2 V
3.0 V
2.8 V
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
100
90
80
70
60
50
40
30
20
10
0
T
J
= 125°C
T
J
= 25°C
0
1
2
10V
5.0 V
4.5 V
4.2 V
T
J
= 25°C
V
DS
≥
10 V
T
J
=
−55°C
3
4
5
6
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
TYPICAL CHARACTERISTICS
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3
NTMFS4847N
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.008
T
J
= 25°C
0.007
0.006
0.005
0.004
0.003
0.002
30
V
GS
= 11.5 V
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0
2
3
4
5
6
7
8
9
10
11
I
D
= 30 A
T
J
= 25°C
V
GS
= 4.5 V
40
50
60
70
80
90
100
110 120
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.8
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.6
1.4
1.2
1.0
0.8
0.6
−50
100
I
D
= 30 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
10,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1000
T
J
= 125°C
−25
0
25
50
75
100
125
150
5
10
15
20
25
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
3200
2800
C, CAPACITANCE (pF)
2400
2000
1600
1200
800
400
0
0
C
oss
C
rss
4
8
12
16
20
24
28
32
C
iss
T
J
= 25°C
12
11
10
9
8
7
6
5
4
3
2
1
0
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
QT
V
GS
Q
gs
Q
gd
I
D
= 30 A
T
J
= 25°C
0
4
8
12
16
20
24
28
32
36
40
44
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
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4
NTMFS4847N
TYPICAL CHARACTERISTICS
1000
I
S
, SOURCE CURRENT (A)
V
DS
= 15 V
I
D
= 15 A
V
GS
= 11.5 V
t, TIME (ns)
100
30
25
20
15
10
5
0
V
GS
= 0 V
T
J
= 25°C
t
f
t
d(off)
t
r
t
d(on)
10
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.4
0.5
0.6
0.7
0.8
0.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1000
180
160
140
120
100
80
60
40
20
0
25
Figure 10. Diode Forward Voltage vs. Current
I
D
= 33 A
I
D
, DRAIN CURRENT (A)
100
10
ms
100
ms
10
V
GS
= 20 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
1 ms
10 ms
dc
1
0.1
100
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, STARTING JUNCTION TEMPERATURE(°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
140
120
100
g
FS
(S)
I
d
(A)
80
60
40
20
0
0
15
30
45
60
75
V
DS
= 1.5 V
90
105
120
100
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
125°C
10
100°C
25°C
1
1
10
100
PULSE WIDTH (ms)
1000
10,000
DRAIN CURRENT (A)
Figure 13. g
FS
vs. Drain Current
Figure 14. I
d
vs. Pulse Width
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