MMBT5087L
Low Noise Transistor
PNP Silicon
Features
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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COLLECTOR
3
1
BASE
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
−50
−50
−3.0
−50
Unit
Vdc
Vdc
Vdc
mAdc
1
2
Symbol
P
D
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−55 to +150
mW
mW/°C
°C/W
°C
1
2Q = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
556
mW
mW/°C
°C/W
2Q M
G
G
Max
Unit
3
SOT−23 (TO−236)
CASE 318
STYLE 6
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ORDERING INFORMATION
Device
Package
Shipping
†
3,000 / Tape &
Reel
MMBT5087LT1G,
SOT−23
NSVMMBT5087LT1G (Pb−Free)
MMBT5087LT3G,
SOT−23 10,000 / Tape &
NSVMMBT5087LT3G (Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1994
1
October, 2016 − Rev. 6
Publication Order Number:
MMBT5087LT1/D
MMBT5087L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= −1.0 mAdc, I
B
= 0)
Collector−Base Breakdown Voltage
(I
C
= −100
mAdc,
I
E
= 0)
Collector Cutoff Current
(V
CB
= −10 Vdc, I
E
= 0)
(V
CB
= −35 Vdc, I
E
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= −100
mAdc,
V
CE
= −5.0 Vdc)
(I
C
= −1.0 mAdc, V
CE
= −5.0 Vdc)
(I
C
= −10 mAdc, V
CE
= −5.0 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
Base−Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(I
C
= −500
mAdc,
V
CE
= −5.0 Vdc, f = 20 MHz)
Output Capacitance
(V
CB
= −5.0 Vdc, I
E
= 0, f = 1.0 MHz)
Small−Signal Current Gain
(I
C
= −1.0 mAdc, V
CE
= −5.0 Vdc, f = 1.0 kHz)
Noise Figure
(I
C
= −20 mAdc, V
CE
= −5.0 Vdc, R
S
= 10 kW, f = 1.0 kHz)
(I
C
= −100
mAdc,
V
CE
= −5.0 Vdc, R
S
= 3.0 kW, f = 1.0 kHz)
f
T
C
obo
h
fe
NF
−
−
2.0
2.0
40
−
250
−
4.0
900
MHz
pF
−
dB
h
FE
250
250
250
V
CE(sat)
V
BE(sat)
−
−
800
−
−
−0.3
0.85
Vdc
Vdc
−
V
(BR)CEO
V
(BR)CBO
I
CBO
−
−
−10
−50
−50
−50
−
−
Vdc
Vdc
nAdc
Symbol
Min
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL NOISE CHARACTERISTICS
(V
CE
= − 5.0 Vdc, T
A
= 25°C)
10
7.0
en, NOISE VOLTAGE (nV)
5.0
I
C
= 10
mA
30
mA
3.0
2.0
1.0 mA
100
mA
300
mA
BANDWIDTH = 1.0 Hz
R
S
≈
0
In, NOISE CURRENT (pA)
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
1.0
10
20
50
100 200
500 1.0 k
f, FREQUENCY (Hz)
2.0 k
5.0 k
10 k
0.1
10
20
50
100 200
500 1.0 k 2.0 k
f, FREQUENCY (Hz)
5.0 k
10 k
300
mA
100
mA
30
mA
10
mA
I
C
= 1.0 mA
BANDWIDTH = 1.0 Hz
R
S
≈ ∞
Figure 1. Noise Voltage
Figure 2. Noise Current
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2
MMBT5087L
NOISE FIGURE CONTOURS
(V
CE
= − 5.0 Vdc, T
A
= 25°C)
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
20
30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
500 700 1.0 k
BANDWIDTH = 1.0 Hz
RS , SOURCE RESISTANCE (OHMS)
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
20
30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
BANDWIDTH = 1.0 Hz
RS , SOURCE RESISTANCE (OHMS)
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
500 700 1.0 k
Figure 3. Narrow Band, 100 Hz
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
20
30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
1.0 dB
2.0 dB
3.0 dB
5.0 dB
500 700 1.0 k
10 Hz to 15.7 kHz
Figure 4. Narrow Band, 1.0 kHz
RS , SOURCE RESISTANCE (OHMS)
Noise Figure is Defined as:
NF
+
20 log10
0.5 dB
en2
)
4KTRS
)
In 2RS2 1 2
4KTRS
e
n
= Noise Voltage of the Transistor referred to the input. (Figure 3)
I
n
= Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10
−23
j/°K)
T = Temperature of the Source Resistance (°K)
R
S
= Source Resistance (Ohms)
Figure 5. Wideband
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MMBT5087L
TYPICAL STATIC CHARACTERISTICS
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
T
A
= 25°C
0.8
I
C
= 1.0 mA
10 mA
50 mA
100 mA
IC, COLLECTOR CURRENT (mA)
100
I
B
= 400
mA
350
mA
250
mA
200
mA
150
mA
40
100
mA
50
mA
T
A
= 25°C
PULSE WIDTH = 300
ms
80 DUTY CYCLE
≤
2.0%
300
mA
60
0.6
0.4
0.2
20
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
I
B
, BASE CURRENT (mA)
0
5.0 10
20
0
5.0
10
15
20
25
30
35
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
40
Figure 6. Collector Saturation Region
Figure 7. Collector Characteristics
T
J
= 25°C
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
V
BE(sat)
@ I
C
/I
B
= 10
0.6
V
BE(on)
@ V
CE
= 1.0 V
0.4
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
0.1
0.2
0.5 1.0
2.0
5.0
10
20
I
C
, COLLECTOR CURRENT (mA)
50
100
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
1.4
1.6
*APPLIES for I
C
/I
B
≤
h
FE
/2
0.8
*q
VC
for V
CE(sat)
0
- 55°C to 25°C
0.8
25°C to 125°C
1.6
q
VB
for V
BE
0.2
- 55°C to 25°C
25°C to 125°C
2.4
0.1
0.5
1.0 2.0
5.0
10 20
I
C
, COLLECTOR CURRENT (mA)
50
100
Figure 8. “On” Voltages
Figure 9. Temperature Coefficients
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MMBT5087L
TYPICAL DYNAMIC CHARACTERISTICS
500
300
200
100
70
50
30
20
t
d
@ V
BE(off)
= 0.5 V
10
7.0
5.0
1.0
t
r
V
CC
= 3.0 V
I
C
/I
B
= 10
T
J
= 25°C
1000
700
500
300
200
t, TIME (ns)
100
70
50
30
20
10
-1.0
t
s
V
CC
= - 3.0 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t, TIME (ns)
t
f
2.0
3.0
20 30
5.0 7.0 10
I
C
, COLLECTOR CURRENT (mA)
50 70
100
- 2.0 - 3.0 - 5.0 - 7.0 -10
- 20 - 30
I
C
, COLLECTOR CURRENT (mA)
- 50 - 70 -100
Figure 10. Turn−On Time
f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
Figure 11. Turn−Off Time
500
T
J
= 25°C
300
200
V
CE
= 20 V
5.0 V
C, CAPACITANCE (pF)
10
T
J
= 25°C
7.0
C
ib
5.0
3.0
2.0
C
ob
100
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I
C
, COLLECTOR CURRENT (mA)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 12. Current−Gain — Bandwidth Product
Figure 13. Capacitance
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