NTTFS4C08N
Power MOSFET
Features
30 V, 52 A, Single N−Channel,
m8FL
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V
(BR)DSS
30 V
9.0 mW @ 4.5 V
R
DS(on)
MAX
5.9 mW @ 10 V
52 A
I
D
MAX
Applications
•
DC−DC Converters
•
Power Load Switch
•
Notebook Battery Management
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation R
qJA
(Note 1)
Continuous Drain
Current R
qJA
≤
10 s
(Note 1)
Power Dissipation
R
qJA
≤
10 s (Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain Current
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C, t
p
= 10
ms
P
D
I
DM
T
J
,
T
stg
I
S
dV/dt
E
AS
P
D
I
D
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
30
±20
15
10.8
2.13
21
15
4.2
9.3
6.7
0.82
52
37.5
25.5
144
−55 to
+150
23
6.0
42
W
A
°C
A
V/ns
mJ
W
A
W
A
W
A
Unit
V
V
A
N−Channel MOSFET
D (5−8)
G (4)
S (1,2,3)
MARKING DIAGRAM
1
1
WDFN8
(m8FL)
CASE 511AB
4C08
A
Y
WW
G
S
S
S
G
4C08
AYWWG
G
D
D
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTTFS4C08NTAG
Package
WDFN8
(Pb−Free)
Shipping
†
1500 / Tape &
Reel
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche Energy
(T
J
= 25°C, V
GS
= 10 V, I
L
= 29 A
pk
, L = 0.1 mH,
R
G
= 25
W)
(Note 3)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at T
J
= 25°C,
V
GS
= 10 V, I
L
= 21 A, E
AS
= 22 mJ.
©
Semiconductor Components Industries, LLC, 2015
1
April, 2015 − Rev. 2
Publication Order Number:
NTTFS4C08N/D
NTTFS4C08N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – Steady State (Note 5)
Junction−to−Ambient – (t
≤
10 s) (Note 4)
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
R
qJC
R
qJA
R
qJA
R
qJA
Value
4.9
58.8
153
30
°C/W
Unit
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
(transient)
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSSt
V
(BR)DSS
/
T
J
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
V
GS
= 0 V, I
D(aval)
= 12.6 A,
T
case
= 25°C, t
transient
= 100 ns
30
34
13.8
1.0
10
±100
V
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 6)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
I
GSS
V
DS
= 0 V, V
GS
=
±20
V
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= V
DS
, I
D
= 250
mA
1.3
5.0
2.2
V
mV/°C
V
GS
= 10 V
V
GS
= 4.5 V
I
D
= 30 A
I
D
= 18 A
4.7
7.2
42
1.0
5.9
9.0
mW
S
W
Forward Transconductance
Gate Resistance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Capacitance Ratio
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Plateau Voltage
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
g
FS
R
G
V
DS
= 1.5 V, I
D
= 15 A
T
A
= 25°C
C
ISS
C
OSS
C
RSS
C
RSS
/C
ISS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 0 V, V
DS
= 15 V, f = 1 MHz
V
GS
= 0 V, f = 1 MHz, V
DS
= 15 V
1113
702
39
0.035
8.4
1.8
3.5
3.3
3.4
18.2
V
nC
nC
pF
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
9.0
33
15
4.0
ns
6. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
7. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS4C08N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
SWITCHING CHARACTERISTICS
(Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 10 A
T
J
= 25°C
T
J
= 125°C
0.79
0.66
28.3
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 30 A
14.5
13.8
15.3
nC
ns
1.1
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
7.0
26
19
3.0
ns
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
t
a
t
b
Q
RR
6. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
7. Switching characteristics are independent of operating junction temperatures.
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3
NTTFS4C08N
TYPICAL CHARACTERISTICS
100
80
4V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
T
J
= 25°C
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
70
60
50
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
J
= 125°C
T
J
= 25°C
T
J
= −55°C
V
DS
= 3 V
5.5 V −
90 10 V
80
70
60
50
40
30
20
10
0
4.5 V
4.2 V
I
D
, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
I
D
= 30 A
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
10
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 10 V
20
30
40
50
60
70
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. V
GS
1.7
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
−50
10
−25
0
25
50
75
100
125
150
I
D
= 30 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1000
10000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
100
T
J
= 85°C
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
NTTFS4C08N
TYPICAL CHARACTERISTICS
1800
1600
C, CAPACITANCE (pF)
1400
1200
1000
800
600
400
200
0
0
5
10
C
rss
15
20
25
30
C
oss
C
iss
V
GS
= 0 V
T
J
= 25°C
10
Q
T
8
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
6
4
Q
gs
Q
gd
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 V
I
D
= 30 A
4
6
8
10
12
14
16
18
20
2
0
0
2
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
100
t, TIME (ns)
t
r
t
d(off)
10
20
18
16
14
12
10
8
6
4
2
0
1
10
R
G
, GATE RESISTANCE (W)
100
0.4
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
t
d(on)
t
f
T
J
= 125°C
T
J
= 25°C
1
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
22
20
18
16
14
12
10
8
6
4
2
0
Figure 10. Diode Forward Voltage vs. Current
I
D
= 20 A
I
D
, DRAIN CURRENT (A)
100
10
ms
100
ms
1 ms
0 V < V
GS
< 10 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
10 ms
10
1
0.1
dc
0.01
0.01
100
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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