VS-70HF(R) Series
www.vishay.com
Vishay Semiconductors
Standard Recovery Diodes
(Stud Version), 70 A
FEATURES
• High surge current capability
• Designed for a wide range of applications
• Stud cathode and stud anode version
• Leaded version available
• Types up to 1600 V V
RRM
• Designed and qualified for industrial level
DO-203AB (DO-5)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRODUCT SUMMARY
I
F(AV)
Package
Circuit configuration
70 A
DO-203AB (DO-5)
Single diode
• Converters
• Power supplies
• Machine tool controls
• Battery charges
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
50 Hz
60 Hz
50 Hz
60 Hz
Range
TEST CONDITIONS
70HF(R)
10 TO 120
70
T
C
140
110
1200
1250
7100
6450
100 to 1200
-65 to +180
140/160
70
110
110
1200
1250
7100
6450
1400/1600
-65 to +150
UNITS
A
°C
A
A
A
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
10
20
30
40
VS-70HF(R)
60
80
100
120
140
160
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
100
200
300
400
600
800
1000
1200
1400
1600
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
200
300
400
500
720
960
1200
1440
1650
1900
V
R(BR)
, MINIMUM
AVALANCHE VOLTAGE
V
200
300
400
500
725
950
1150
1350
1550
1750
4.5
9
15
I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Revision: 06-Mar-17
Document Number: 93521
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-70HF(R) Series
www.vishay.com
Vishay Semiconductors
70HF(R)
10 to 120 140/160
70
140
110
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
1200
1250
1000
Sinusoidal half wave,
initial T
J
= T
J
maximum
1050
7100
6450
5000
4550
71 000
0.79
1.00
2.33
m
r
f2
V
FM
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 220 A, T
J
= 25 °C, t
p
= 400 μs rectangular wave
1.35
1.53
1.46
V
A
2
s
V
A
2
s
A
110
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one cycle forward,
non-repetitive surge current
SYMBOL
I
F(AV)
I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
UNITS
A
°C
A
I
FSM
Maximum I
2
t for fusing
I
2
t
Maximum
I
2
t
for fusing
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Thermal resistance, case to heatsink
Maximum allowable mounting torque
(+0 %, -10 %)
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not lubricated thread, tighting on nut
(1)
Lubricated thread, tighting on nut
(1)
TEST CONDITIONS
70HF(R)
10 to 120
140/160
UNITS
°C
-65 to +180 -65 to +150
0.45
0.25
3.4 (30)
2.3 (20)
4.2 (37)
3.2 (28)
17
0.6
See dimensions - link at the end of datasheet
DO-203AB (DO-5)
(2)
K/W
Not lubricated thread, tighting on hexagon
(2)
Lubricated thread, tighting on hexagon
N·m
(lbf · in)
g
oz.
Approximate weight
Case style
Notes
(1)
Recommended for pass-through holes
(2)
Recommended for holed threaded heatsinks
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.08
0.10
0.13
0.19
0.30
RECTANGULAR CONDUCTION
0.06
0.11
0.14
0.20
0.30
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 06-Mar-17
Document Number: 93521
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-70HF(R) Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
150
70HF(R)
series
(1400 V to 1600 V)
R
thJC
(DC) = 0.45 K/W
140
Maximum Allowable Case Temperature (°C)
180
70HF(R)
series
(100 V to 1200 V)
R
thJC
(DC) = 0.45 K/W
170
160
Conduction angle
130
Conduction angle
150
120
140
60°
30°
130
0
10
20
30
40
50
90°
110
60°
30°
100
0
10
20
30
40
90°
120°
180°
50
60
70
80
120°
180°
60
70
80
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
Maximum Allowable Case Temperature (°C)
180
170
160
Conduction period
150
140
90°
130
30°
120
0
20
40
60
80
100
120
60°
120°
180°
DC
70HF(R)
series
(100 V to 1200 V)
R
thJC
(DC) = 0.45 K/W
Maximum Allowable Case Temperature (°C)
150
140
130
Conduction period
120
110
90°
100
30°
90
0
20
40
60
80
100
120
60°
120°
180°
DC
70HF(R)
series
(1400 V to 1600 V)
R
thJC
(DC) = 0.45 K/W
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Average Forward Current (A)
Fig. 4 - Current Ratings Characteristics
Maximum Average Forward Power Loss (W)
90
80
70
60
50
40
30
20
10
0
0
10
20
180°
120°
90°
60°
30°
RMS limit
7
0.
0.5
R
th
S
1
K/
1.
5
K/
W
W
K/
W
K/
A
W
=0
2K
.3
/W
K/
W
R
-
Δ
3K
/W
4K
/W
Conduction angle
70HF(R)
series
(100 V to 1200 V)
T
J
= 180 °C
5 K/
W
30
40
50
60
70
0
80
20
40
60
80
100 120 140 160 180
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 5 - Forward Power Loss Characteristics
Revision: 06-Mar-17
Document Number: 93521
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-70HF(R) Series
www.vishay.com
Vishay Semiconductors
Maximum Average Forward Power Loss (W)
120
100
80
60
40
20
0
0
20
40
60
80
100
0
120
20
40
60
80
100 120 140 160 180
DC
180°
120°
90°
60°
30°
1
1.5
7
K/
W
K/
W
K/
W
0.
0.5
K/
W
R
th
S
A
=
3
0.
W
K/
-
Δ
RMS limit
Conduction period
70HF(R)
series
(100 V to 1200 V)
T
J
= 180 °C
2K
/W
3K
/W
5 K/W
R
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 6 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
90
80
70
60
50
40
30
20
10
0
0
10
20
180°
120°
90°
60°
30°
RMS limit
0.
5
R
th
0.
7
1
S
A
K/
K/
K/
W
=0
W
W
1.5
.3
K/
K/
W
W
2K
/W
R
-
Δ
Conduction angle
70HF(R)
series
(1400 V to 1600 V)
T
J
= 150 °C
30
40
50
60
70
0
80
3K
/W
4K
/W
5 K/W
25
50
75
100
125
150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
120
100
80
60
40
20
0
0
20
40
60
80
100
0
120
25
50
75
100
125
150
DC
180°
120°
90°
60°
30°
0.
7
0.
5
K/
W
R
th
K/
S
A
W
=
1K
/W
0.
3
W
K/
R
-
Δ
1.5
K/W
RMS limit
Conduction period
70HF(R)
series
(1400 V to 1600 V)
T
J
= 150 °C
2K
/W
3K
/W
5 K/
W
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - Forward Power Loss Characteristics
Revision: 06-Mar-17
Document Number: 93521
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-70HF(R) Series
www.vishay.com
Vishay Semiconductors
Instantaneous Forward Current (A)
1000
Peak Half
Sine
Wave Forward Current (A)
1100
1000
900
800
700
600
500
400
300
1
At any rated load condition and with rated V
RRM
applied following
surge.
Initial T
J
= T
J
max.
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
100
T
J
= 25 °C
10
T
J
= T
J
max.
70HF(R)
series
70HF(R)
series
1
0
0.5
1
1.5
2
2.5
3
10
100
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 9 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Voltage (V)
Fig. 11 - Forward Voltage Drop Characteristics
Z
thJC
- Transient Thermal Impedance (K/W)
Peak Half
Sine
Wave Forward Current (A)
1200
1100
1000
900
800
700
600
500
400
300
200
0.01
10
Steady state
value
R
thJC
= 0.45 K/W
(DC operation)
Maximum non repetitive
surge
current
vs. pulse train duration.
Initial T
J
= T
J
max.
No voltage reapplied
Rated V
RRM
reapplied
1
0.1
0.01
70HF(R)
series
0.001
0.0001
70HF(R)
series
0.1
1
0.001
0.01
0.1
1
10
Pulse Train Duration (s)
Fig. 10 - Maximum Non-Repetitive Surge Current
Square
Wave Pulse Duration (s)
Fig. 12 - Thermal Impedance Z
thJC
Characteristics
Instantaneous Forward Current (A)
1000
100
T
J
= 25 °C
T
J
= T
J
max.
10
70HF (R)
series
(140 to 160)
1
0
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous Forward Voltage (V)
Fig. 13 - Forward Voltage Drop Characteristics
Revision: 06-Mar-17
Document Number: 93521
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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