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FM25640B-G

产品描述8-bit Microcontrollers - MCU FLASH MICROCONTROLLER
产品类别存储    存储   
文件大小599KB,共20页
制造商Cypress(赛普拉斯)
标准
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FM25640B-G概述

8-bit Microcontrollers - MCU FLASH MICROCONTROLLER

FM25640B-G规格参数

参数名称属性值
产品种类
Product Category
F-RAM
制造商
Manufacturer
Cypress(赛普拉斯)
RoHSDetails
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
SOIC-8
Memory Size64 kbit
接口类型
Interface Type
SPI
Organization8 k x 8
工作电源电压
Operating Supply Voltage
5 V
工作温度范围
Operating Temperature Range
- 40 C to + 85 C
系列
Packaging
Tube
Access Time10 ms
最大工作温度
Maximum Operating Temperature
+ 85 C
最小工作温度
Minimum Operating Temperature
- 40 C
Moisture SensitiveYes
工厂包装数量
Factory Pack Quantity
194
电源电压-最大
Supply Voltage - Max
5.5 V
电源电压-最小
Supply Voltage - Min
4.5 V
类型
Type
Nonvolatile RAM
单位重量
Unit Weight
0.019048 oz

文档预览

下载PDF文档
FM25640B
64-Kbit (8K × 8) Serial (SPI) F-RAM
64-Kbit (8K × 8) Serial (SPI) F-RAM
Features
Functional Description
The FM25640B is a 64-Kbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 151 years
while eliminating the complexities, overhead, and system level
reliability problems caused by serial flash, EEPROM, and other
nonvolatile memories.
Unlike serial flash and EEPROM, the FM25640B performs write
operations at bus speed. No write delays are incurred. Data is
written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared with other
nonvolatile memories. The FM25640B is capable of supporting
10
14
read/write cycles, or 100 million times more write cycles
than EEPROM.
These capabilities make the FM25640B ideal for nonvolatile
memory applications requiring frequent or rapid writes.
Examples range from data collection, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
The FM25640B provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
FM25640B uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The device
specifications are guaranteed over an industrial temperature
range of –40
C
to +85
C.
For a complete list of related documentation, click
here.
64-Kbit ferroelectric random access memory (F-RAM) logically
organized as 8K × 8
14
High-endurance 100 trillion (10 ) read/writes
151-year data retention (See the
Data Retention and
Endurance
table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 20 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Low power consumption
250
A
active current at 1 MHz
4
A
(typ) standby current
Voltage operation: V
DD
= 4.5 V to 5.5 V
Industrial temperature: –40
C
to +85
C
8-pin small outline integrated circuit (SOIC) package
Restriction of hazardous substances (RoHS) compliant
Logic Block Diagram
WP
CS
HOLD
SCK
Instruction Decoder
Clock Generator
Control Logic
Write Protect
8Kx8
F-RAM Array
Instruction Register
Address Register
Counter
SI
13
8
Data
I/
O Register
3
Nonvolatile Status
Register
SO
Cypress Semiconductor Corporation
Document Number: 001-84468 Rev. *H
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised April 27, 2017
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