TGA2578
2-6GHz 30W Power Amplifier
Applications
Communications
Electronic Warfare
Test Instrumentation
EMC Amplifier
Product Features
Frequency Range: 2 – 6 GHz
Psat: 45 dBm CW
PAE: 40%
CW
Small Signal Gain: 27 dB
Input Return Loss: >20 dB
IM3: -30 dBc @ 40 dBm Pout/Tone
Bias: V
D
= 28 V, I
DQ
= 400 mA, V
G
= -2.8 V Typical
Chip Dimensions: 6.4 x 5.0 x 0.10 mm
Functional Block Diagram
2 3
4
5
1
6
10 9
8
7
General Description
TriQuint’s TGA2578 is a wideband power amplifier
fabricated on TriQuint’s 0.25um GaN on SiC process.
Operating from 2 to 6 GHz, it achieves 30 W saturated
output power with high efficiency of 40% PAE, and 27
dB small signal gain.
Fully matched to 50 ohms with integrated DC blocking
caps on both I/O ports, the TGA2578 is ideally suited to
support both commercial and defense related
applications.
The TGA2578 is 100% DC and RF tested on-wafer to
ensure compliance to power and PAE specifications.
Lead-free and RoHS compliant.
Pad Configuration
Pad No.
1
2, 10
3, 9
4, 8
5, 7
6
Symbol
RF In
V
G1
V
G2
V
D1
V
D2
RF Out
Ordering Information
Part
TGA2578
- 1 of 13 -
ECCN
3A001.b.2.a
Description
2-6 GHz 30 W Power
Amplifier
Datasheet: Rev A 03-01-16
© 2013 TriQuint
Disclaimer: Subject to change without notice
www.triquint.com
TGA2578
2-6GHz 30W Power Amplifier
Absolute Maximum Ratings
Parameter
Drain Voltage (V
D
)
Gate Voltage Range (V
G
)
Drain Current (I
D
)
Gate Current (I
G
)
Power Dissipation, 85 °C (P
DISS
)
Input Power, CW, 50 Ω, (P
IN
)
Input Power, CW, VSWR 3:1, V
D
=
30 V, 85 °C, (P
IN
)
Input Power, CW, VSWR 10:1, V
D
=
28 V, 85 °C (P
IN
)
Channel tremperature (T
CH
)
Mounting Temperature
(30 Seconds)
Storage Temperature
Recommended Operating Conditions
Value
Parameter
Drain Voltage (V
D
)
Drain Current (I
DQ
)
Drain Current Under RF Drive (I
D_Drive
)
Gate Voltage (V
G
)
Value
28 V
400 mA
3800 mA
-2.8 V
40 V
-8 to 0 V
5A
Gatetaa
-15 to 30 mA
92.5 W
27 dBm
27 dBm
25 dBm
275 °C
320 °C
-55 to 150 °C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all operating
conditions.
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device at
these conditions is not implied.
Electrical Specifications
Test conditions unless otherwise noted: 25 C, V
D
= 28 V, I
D
= 400 mA, V
G
= -2.8 V Typical
0
Parameter
Operational Frequency Range
Small Signal Gain
Input Return Loss
Output Return Loss
Output Power @ Pin = 23 dBm
Power Added Efficiency @ Pin = 23 dBm
IM3 @ Pout/Tone = 40 dBm
IM5 @ Pout/Tone = 40 dBm
Small Signal Gain Temperature Coefficient
Output Power Temperature Coefficient
Min
2
Typical
27
20
5
45
40
-30
-40
-0.05
-0.02
Max
6
Units
GHz
dB
dB
dB
dBm
%
dBc
dBc
dB/°C
dBm/°C
Datasheet: Rev A 03-01-16
© 2013 TriQuint
- 2 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2578
2-6GHz 30W Power Amplifier
Thermal and Reliability Information
Parameter
Thermal Resistance (θ
JC
)
Channel Temperature (T
CH
)
Median Lifetime (T
M
)
(1)
Test Conditions
T
base
= 85 °C, V
D
= 28 V, I
D_Drive
=
3.5 A, Pout = 45 dBm, P
DISS
= 67 W
Value
2.05
222
1.99+6
Units
ºC/W
°C
Hrs
Notes:
1. Thermal resistance measured to back of carrier plate. MMIC mounted on 40 mils CuMo carrier using 1.5 mil 80/20 AuSn.
Median Lifetime
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
Median Lifetime vs. Channel Temperature
Median Lifetime, T
M
(Hours)
FET13
25
50
75
100
125
150
175
200
225
250
275
Channel Temperature, T
CH
(C)
Datasheet: Rev A 03-01-16
© 2013 TriQuint
- 3 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2578
2-6GHz 30W Power Amplifier
Typical Performance
Gain vs. Frequency vs. Temperature
V
D
= 28 V, I
DQ
= 400 mA
40
35
30
35
30
25
Gain vs. Frequency vs. V
D
Temp. = +25 °C
I
DQ
= 400 mA
S21 (dB)
S21 (dB)
25
20
15
10
5
20
15
10
5
0
1
2
3
4
5
6
7
- 40 °C
+25 °C
+85 °C
32 V
30 V
28 V
25 V
0
1
2
3
4
5
6
7
Frequency (GHz)
Frequency (GHz)
0
-5
-10
Input Return Loss vs. Freq. vs. Temp.
V
D
= 28 V, I
DQ
= 400 mA
0
-5
Input Return Loss vs. Frequency vs. V
D
Temp. = +25 °C
I
DQ
= 400 mA
- 40 °C
+25 °C
32 V
-10
S11 (dB)
S11 (dB)
30 V
28 V
25 V
-15
+85 °C
-15
-20
-25
-30
1
2
3
4
5
6
7
-20
-25
-30
1
2
3
4
5
6
7
Frequency (GHz)
Frequency (GHz)
0
-5
-10
Output Return Loss vs. Freq. vs. Temp.
V
D
= 28 V, I
DQ
= 400 mA
0
-5
-10
Output Return Loss vs. Frequency vs. V
D
Temp. = +25 °C
I
DQ
= 400 mA
S22 (dB)
S22 (dB)
-15
- 40 °C
+25 °C
-15
-20
-25
-30
1
2
3
4
+85 °C
-20
32 V
-25
-30
5
6
7
1
2
3
4
30 V
28 V
25 V
5
6
7
Frequency (GHz)
Frequency (GHz)
Datasheet: Rev A 03-01-16
© 2013 TriQuint
- 4 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2578
2-6GHz 30W Power Amplifier
Typical Performance
Output Power vs. Freq. vs. Input Power
Temp. = +25 °C
V
D
= 28 V, I
DQ
= 400 mA
52
48
52
48
Output Power vs. Input Power vs. Freq.
Temp. = +25 °C
V
D
= 28 V, I
DQ
= 400 mA
Output Power (dBm)
Output Power (dBm)
44
40
36
32
23 dBm
20 dBm
10 dBm
44
40
36
32
28
2 GHz
4 GHz
28
24
6 GHz
20
2
3
4
5
6
7
24
0
5
10
15
20
25
Frequency (GHz)
Input Power (dBm)
35
30
25
Gain vs. Frequency vs. Input Power
Temp. = +25 °C
V
D
= 28 V, I
DQ
= 400 mA
32
30
28
Gain vs. Input Power vs. Frequency
Temp. = +25 °C
V
D
= 28 V, I
DQ
= 400 mA
Gain (dB)
Gain (dB)
20
15
10
5
0
2
3
4
5
10 dBm
20 dBm
23 dBm
26
24
22
20
2 GHz
4 GHz
6 GHz
18
6
7
0
5
10
15
20
25
Frequency (GHz)
Input Power (dBm)
60
55
50
45
40
35
30
25
20
15
10
5
0
2
PAE vs. Frequency vs. Input Power
Temp. = +25 °C
50
45
40
35
PAE vs. Input Power vs. Frequency
Temp. = +25 °C
V
D
= 28 V, I
DQ
= 400 mA
V
D
= 28 V, I
DQ
= 400 mA
PAE (%)
23 dBm
20 dBm
10 dBm
PAE (%)
30
25
20
2 GHz
4 GHz
6 GHz
15
10
5
0
3
4
5
6
7
0
5
10
15
20
25
Frequency (GHz)
Input Power (dBm)
Datasheet: Rev A 03-01-16
© 2013 TriQuint
- 5 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
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